Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high-power diode lasers
High-power diode lasers use long resonators and asymmetric facet reflectivities, leading to longitudinally varying photon density (recombination rate) and early power saturation due to spatial-hole-burning. We summarize recent experimental studies into the relation between device geometry and local current and carrier densities to high powers (10W per 90µm stripe) and compare these to simulation. We use custom devices with segmented contacts (local current density) or back-side window (carrier density and temperature). Strong non-uniformity is observed that increases with bias, above prediction. Local heating at the front facet induces non-saturating carrier accumulation at the stripe edges, a key source of non-uniformity.
Received the B.A. degree in physics from Middle East Technical University in Ankara, Turkey and M.Sc. degree in physics from Bilkent University in Ankara, Turkey, in 2010 and 2013, respectively. In 2018, she received her Doctoral degree for her work on high power diode lasers at the physics department of Bilkent University. In 2019, she joined the high power diode lasers group in the Ferdinand Braun Institute gGmbH, Leibniz- Institut für Höchstfrequenztechnik in Berlin