Integrated quantum photonics in silicon and silicon nitride (Invited Paper)

We discuss integrated quantum photonics based on our group’s recent discovery of intrinsic quantum emitters in silicon nitride (SiN), which provide bright, high-purity single-photon emission at room temperature and the capability of seamless integration with SiN photonic waveguides. We established methods of deterministic creation of these quantum emitters and performed foundational photophysical studies at room and cryogenic temperatures. Furthermore, we explore the possibility of generating indistinguishable photons at high repetition rates by using plasmonic metamaterials, which may enable broader applications of SiN quantum emitters. Plasmonic speed-up of spontaneous emission rate beyond the rate of detrimental decoherence processes may also enable the generation of indistinguishable photons even. We also demonstrate record-high nonlinearities using avalanche multiplication process and employ it for all-optical modulation at single-photon intensities. This work gives a blueprint for many photonic applications at single-photon level. Finally, we also provide outlook for exciting future developments in the field of integrated quantum photonics based on silicon platform.