InGaN blue light-emitting micro-diodes with current path defined by tunnel junction
27 January 2022 • 9:30 AM - 10:00 AM PST | Room 152 (Upper Mezzanine South)
In this paper, we try to resolve problems related to decreasing the size of an LED, and find a solution that would let us preserve optoelectronics parameters. The main idea is to use tunnel junctions to define the current path and, therefore, define the size of µLED. This way, during fabrication, there is no need to etch the active region. That way, it does not introduce any degradation nor problems related to surface states or differences in electrical fields inside the device. We have fabricated such devices with sizes ranging from 100 µm-5 µm. In the characterization of these devices, it became apparent that, both electrical and optical parameters, are fully scalable with size. Most importantly, we do not observe an increase in the non-radiative recombination coefficient even for the smallest device. In addition, we observe excellent thermal stability of their light emission characteristics.
Institute of High Pressure Physics (Poland)
In 2014, I have finished “par excellence” my Master degree at Warsaw’s University of Technology. In 2015, I have started PhD studies at Institute of Physics in Warsaw. My PhD work focuses on radiative and non-radiative recombination processes in InGaN system devices.