High-performance vacuum-deposited perovskite light-emitting diodes with the assistance of small-molecule hole-transport materials

Chung-An Hsieh; Guang-Hsun Tan; Hao-Cheng Lin; Kai-Yuan Hsiao; Ming-Yen Lu; Li-Yin Chen; Hao-Wu Lin

doi:10.1117/12.2646235

14 March 2023 High-performance vacuum-deposited perovskite light-emitting diodes with the assistance of small-molecule hole-transport materials

Chung-An Hsieh, Guang-Hsun Tan, Hao-Cheng Lin, Kai-Yuan Hsiao, Ming-Yen Lu, Li-Yin Chen, Hao-Wu Lin

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Proceedings Volume 12441, Light-Emitting Devices, Materials, and Applications XXVII; 124410F (2023) https://doi.org/10.1117/12.2646235
Event: SPIE OPTO, 2023, San Francisco, California, United States

Conference Poster

Abstract

Metal halide Perovskite Light-Emitting Diodes (PeLEDs) rapidly advance in their External Quantum Efficiency (EQE), highest brightness, and operation lifetime in recent years. However, solution-processed PeLEDs usually encounter uniformity issues of crystal growth, which make them difficult to realize large-area fabrication, despite their outstanding device performance. With the intrinsic advantage of high reproducibility and uniformity in thin-film quality, vacuum-deposited PeLEDs possess a great potential in industrial mass production. Although breakthroughs have been observed in vacuum-deposited PeLEDs recently, the strategy of choosing their Hole-Transport Materials (HTMs) still follows the experience of solution-processed PeLEDs. In this work, we demonstrated a simple approach to significantly improve vacuum-deposited perovskite PeLEDs by inserting a thin vacuum-deposited interfacial organic layer between 1,1-Bis[(di-4-tolylamino) phenyl] cyclohexane (TAPC) HTM and perovskite emission layer (EML). With the evidence of X-ray Photoelectron Spectroscopy (XPS), we showed that the interfacial layer successfully inhibited the formation of metallic Pb0 caused by the TAPC/perovskite chemical degradation. The device with the interfacial layer exhibited a luminance of 55968 cd m-2, a current efficiency of 33.2 cd A-1, and an EQE of 9.40%, which was a 4-fold enhancement compared to that of the device without the interfacial layer. The results of EQE and brightness are among the highest reported values in vacuum deposited PeLEDs.

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Chung-An Hsieh, Guang-Hsun Tan, Hao-Cheng Lin, Kai-Yuan Hsiao, Ming-Yen Lu, Li-Yin Chen, and Hao-Wu Lin "High-performance vacuum-deposited perovskite light-emitting diodes with the assistance of small-molecule hole-transport materials", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 124410F (14 March 2023); https://doi.org/10.1117/12.2646235

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