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Conference 12001 > Paper 12001-37
Paper 12001-37

GaN vacuum nanoelectronic devices

26 January 2022 • 11:30 AM - 11:50 AM PST | Room 152 (Upper Mezzanine South)

Abstract

We demonstrate novel GaN nanogap vacuum nanoelectronic diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be presented. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

Presenter

Sandia National Labs. (United States)
George T. Wang is a Principal Member of the Technical Staff in the Advanced Materials Sciences Department at Sandia National Laboratories. His current research interests involve the fabrication, properties, and applications of III-nitride, III-V, and Group IV based semiconductor nano- and quantum structures. Dr. Wang has authored or co-authored over 90 publications, which have received over 4800 citations, and holds eleven patents.
Presenter/Author
Sandia National Labs. (United States)
Author
Keshab R. Sapkota
Sandia National Labs. (United States)
Author
A. Alec Talin
Sandia National Labs. (United States)
Author
Sandia National Labs. (United States)
Author
Univ. of Florida (United States)
Author
Sandia National Labs. (United States)
Author
Gyorgy Vizkelethy
Sandia National Labs. (United States)
Author
Kevin S. Jones
Univ. of Florida (United States)