Femtosecond regime nonlinear absorption in group IV semiconductor materials

Kassie S. Marble; Christopher B. Marble; Ethan B. Keene; Jason W. Pipal; Vladislav V. Yakovlev

doi:10.1117/12.2610156

7 March 2022 Femtosecond regime nonlinear absorption in group IV semiconductor materials

Kassie S. Marble, Christopher B. Marble, Ethan B. Keene, Jason W. Pipal, Vladislav V. Yakovlev

Proceedings Volume 11999, Ultrafast Phenomena and Nanophotonics XXVI; 1199908 (2022) https://doi.org/10.1117/12.2610156
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Silicon optoelectronics devices have been well explored in the near-IR regime with emphasis on telecom applications. In the mid-IR regime, group IV optoelectronic devices (silicon and/or germanium based) could one day serve as waveguides, nonlinear media for χ⁽²⁾ and χ⁽³⁾ wave mixing, and highly adaptable platforms for low cost, lab-on-chip chemical and biological sensors. However, nonlinear optical absorption in these materials limit potential applications. In this report, we observe dramatic decreases in transmission in silicon and germanium at middle-infrared wavelengths when utilizing intense (~ 10 GW/cm²) 100 fs pulses. We suggest potential mechanisms to explain the observed nonlinear effects and describe future experiments to decouple high order multiphoton absorption, electron-hole pair generation and light-dopant interactions which might contribute to observed effects.

Conference Presentation

Citation Download Citation

Kassie S. Marble, Christopher B. Marble, Ethan B. Keene, Jason W. Pipal, and Vladislav V. Yakovlev "Femtosecond regime nonlinear absorption in group IV semiconductor materials", Proc. SPIE 11999, Ultrafast Phenomena and Nanophotonics XXVI, 1199908 (7 March 2022); https://doi.org/10.1117/12.2610156

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