Photonics West 2022 in San Francisco
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Conference 12001 > Paper 12001-54
Paper 12001-54

Fabrication of cantilevers with GaN using PEC etching

Abstract

The three-dimensional structure of GaN is expected to have new device applications in MEMS and optical applications. In this study, we have fabricated GaN cantilevers. The structures were fabricated by MOVPE with insulating GaN layers between the n-GaN layers. The cantilever structure was fabricated by Photo-electrochemical etching etching using an InGaN sacrificial layer inserted between the sandwich structure and the substrate. The cantilever structure was monomorphic, and the resonance was confirmed by applying an AC voltage. The Young's modulus was calculated from the resonance frequency and compared with previously reported values.

Presenter

Nagoya Univ. (Japan)
Presenter/Author
Nagoya Univ. (Japan)