Enhancement of hot carrier effects in core-shell InGaAs nanowires by Auger heating

Nanostructured materials, such as nanowires, can enhance the effects of hot carriers by confining them in small areas. This local confinement can create phonon-bottleneck effects, or hot phonons, and increase the rates of Auger recombination, leading to robust hot carrier effects in these nanostructures. Determining the properties of hot carriers in core-shell InGaAs/InAlAs nanowires has revealed a strong correlation between hot carrier effects and the rates of Auger recombination. Exploring the impact of Auger heating on slowing the rates of hot carrier thermalization provides valuable insights for designing efficient hot carrier absorbers for 3rd generation photovoltaic solar cells.