Paper 13385-51
Paper 13385-51
Design study on large-area all-semiconductor PCSELs
30 January 2025 • 11:50 AM - 12:10 PM PST | Moscone South, Room 103 (Level 1 Lobby)
Abstract
We present a design study of photonic crystal surface emitting lasers (PCSELs) with an InGaP/GaAs all-semiconductor photonic crystal designed to emit at λ=1070 nm. Using simulation tools based on coupled-wave-theory for PCSELs we model square cavity PCSELs of size L x L and show that with appropriate design of the photonic crystal unit cell all-semiconductor PCSELs can be realised with large mode-discrimination and high out-coupling efficiency, comparable to best-in-class void-containing devices. In particular, we show that a unit cell with square lattice periodicity and a rotated and stretched triangular feature is suitable for large-area devices (1 mm < L < 3 mm) due to a reduced strength of one-dimensional in-plane coupling.
Presenter
Ferdinand-Braun-Institut gGmbH (Germany)
Paul Crump received the B.A. (Hons.) degree in natural science (physics) from Oxford University, Oxford, U.K., and the doctoral degree in physics from Nottingham University, Nottingham, U.K., in 1992 and 1996, respectively. His thesis dealt with experimental studies of 2D electrical transport effects in semiconductor heterostructures. From 1996 to 2001, he was with Agilent Technologies Corporation, Ipswich, U.K., where he helped develop high-performance single-mode InP-based laser diodes. In 2001, he joined nLight Photonics Corporation, Vancouver, WA, USA, where he helped develop high-power, high-efficiency GaAs, and InP-based broad-area diode lasers and bars. In 2007, he joined the Ferdinand-Braun-Institut (FBH), Berlin, Germany, where he leads the High-Power Diode Laser Lab, that develops high performance large-area diode lasers.