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Conference 12001 > Paper 12001-4
Paper 12001-4

Carbon and manganese in semi-insulating bulk GaN crystals

24 January 2022 • 2:00 PM - 2:20 PM PST | Room 152 (Upper Mezzanine South)

Abstract

Co-doping with manganese and carbon was performed in gallium nitride (GaN) grown by halide vapor phase epitaxy (HVPE). The crystallized material was examined in terms of its structural, optical, and electrical properties. Basing on Raman and photoluminescence spectra of the samples it will be presented that in the GaN:Mn,C crystals Mn is in a different electrical state (Mn^(3+/4+)) in comparison to Mn in GaN:Mn (Mn^(2+/3+)). This change is due to the presence of carbon, which forces manganese to change the oxidation state. This phenomenon will be analyzed and confirmed by the examination of the electrical properties of obtained crystals.

Presenter

Institute of High Pressure Physics (Poland)
Presenter/Author
Institute of High Pressure Physics (Poland)
Author
Marcin Zajac
Institute of High Pressure Physics (Poland)
Author
Institute of High Pressure Physics (Poland)
Author
Institute of High Pressure Physics (Poland)
Author
Michal Fijalkowski
Institute of High Pressure Physics (Poland)
Author
Malgorzata Iwinska
Institute of High Pressure Physics (Poland)
Author
Institute of High Pressure Physics (Poland)
Author
Institute of Physics, Polish Academy of Sciences (Poland)
Author
Andrzej Suchocki
Institute of Physics, Polish Academy of Sciences (Poland)
Author
Institute of High Pressure Physics (Poland)