Carbon and manganese in semi-insulating bulk GaN crystals
24 January 2022 • 2:00 PM - 2:20 PM PST | Room 152 (Upper Mezzanine South)
Co-doping with manganese and carbon was performed in gallium nitride (GaN) grown by halide vapor phase epitaxy (HVPE). The crystallized material was examined in terms of its structural, optical, and electrical properties. Basing on Raman and photoluminescence spectra of the samples it will be presented that in the GaN:Mn,C crystals Mn is in a different electrical state (Mn^(3+/4+)) in comparison to Mn in GaN:Mn (Mn^(2+/3+)). This change is due to the presence of carbon, which forces manganese to change the oxidation state. This phenomenon will be analyzed and confirmed by the examination of the electrical properties of obtained crystals.
Institute of High Pressure Physics (Poland)