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Conference 12024 > Paper 12024-12
Paper 12024-12

635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power

Abstract

High radiance red-emitting light sources are required for several laser applications such as flying-spot-displays or high resolution microscopy. As many of such applications are moving out of the lab into industrial environment there is a high demand for small sized, efficient and reliable laser sources, for which semiconductor lasers are preferred. The red-emitting tapered diode lasers presented here, emit up to 1 W of optical power with a nearly diffraction limited beam at 635 nm. A preliminary lifetime test yielded more than 2000 h at a power level of 500 mW.

Presenter

Ferdinand-Braun-Institut (Germany)
Katrin Paschke received the Diploma degree in physics from the University of Potsdam, Germany, in 1996, and the Ph.D. degree in electrical engineering from Technische Universität Berlin, Berlin, for the realization of a high brilliance α-DFB laser, in 2006. In 1997, she joined Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany, and worked initially on noise and reliability of optoelectronical devices. Her research interests include the development of high brightness diode lasers and the fabrication of hybrid diode laser systems in the infrared spectral range and with frequency conversion for laser light sources in the visible spectral range. Since 2007, she has been a Group Leader at Ferdinand-Braun-Institut, where she is responsible for the research on hybrid diode laser systems. Currently, she is the Head of the Laser Modules Lab at the Ferdinand-Braun-Institut. She authored or coauthored over 130 journal publications and holds 4 patents.
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Ferdinand-Braun-Institut (Germany)
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Ferdinand-Braun-Institut (Germany)
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Ferdinand-Braun-Institut (Germany)
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Ferdinand-Braun-Institut (Germany)
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Ferdinand-Braun-Institut (Germany)