Paper 11772-80
Paper 11772-80
Monolithically integrated anti-fringing structures for IR detectors
On demand 
Abstract
GaAs is the basic material used as a substrate for semiconductor architecture for mid- and far-infrared operation. However, due to the high refractive index (n = 3.3) determining high reflectance, the presence of GaAs substrate in infrared detectors generates numerous problems related to (i) Fresnel reflections, (ii) the formation of the etalon effect, (iii) optical crosstalk. Several solutions decreasing these effects were investigated both theoretically and experimentally: AR coating, detectors geometry and surface structurization. The best reflection reduction and at the same time repeatability and low manufacturing cost were obtained for GaAs structurization. These functional surfaces were based on the principles of diffraction gratings and gradient materials and were produced using ion coupled plasma. The fringing effect in 5um-optimized IR photodiode has been reduced up to 4 times in comparison with standard flat detector.
Presenter
Vigo System (Poland)
Justyna Chrzanowska-Giżyńska earned her Master of Science with specialization of Photonics at Warsaw University of Technology in 2015, and her PhD in Materials Science from the Polish Academy of Sciences in 2018. In her thesis work she investigated process of laser ablation and magnetron sputtering.
After completing her PhD, Justyna took up the subject of photon detectors in terms of reducing their optical noise, eg. fringing, optical cross talk. She is currently Optical Engineer in Vigo System. Her research interests concern the design of optical elements and systems as well as surface patterning/structurization (e.g. with a laser radiation).