Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
A method of hybrid integration of quantum dot microdisk lasers with silicon wafer is proposed and realized. In addition to the possibility of combining microlasers with various silicon-based electronic and photonic devices, this makes it possible to significantly improve heat removal from the active region of the microlaser. The thermal resistance normalized to the mesa area reaches the level of about 0.002 (K/W)*cm2, which is significantly lower than the corresponding values of QD microlasers on GaAs substrate and monolithically grown on Si. As a result, the threshold current as well as current-induced shift of emission wavelength are reduced in continuous-wave regime.
National Research Univ. Higher School Economics (Russian Federation), Alferov Univ. (Russian Federation)
Natalia Kryzhanovskaya is currently head of International Laboratory of Quantum Optoelectronics in HSE University. She is principal investigator in a number of national and international research projects. Her research interests are edge-emitting and microdisk lasers based on quantum well and quantum dots, optical properties of semiconductors, microcavities.