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Nelson Tansu

Prof. Nelson  Tansu

Daniel E. '39 and Patricia M. Smith Endowed Chair Professor in Photonics and Nanoelectronics
Smith Family Endowed Director, Center for Photonics and Nanoelectronics (CPN)
Lehigh University
Department of Electrical and Computer Engineering (ECE)

Bethlehem PA 18015
United States

tel: (610) 758-2678
fax: (610) 758-2605
E-mail: Tansu@Lehigh.Edu
Web: http://www.ece.lehigh.edu/~tansu

Area of Expertise

Semiconductor photonics, physics and devices of semiconductor optoelectronics, III-Nitride, light-emitting diodes, semiconductor lasers, solar cells, thermoelectricity, and physics and technology of nanostructures.


Nelson Tansu received his B.S. degree (Applied Mathematics, Electrical Engineering, and Physics; with Highest Distinction) and his Ph.D. degree (Electrical Engineering / Applied Physics) from the University of Wisconsin-Madison in May 1998 and May 2003, respectively. Dr. Tansu is the Daniel E. '39 and Patricia M. Smith Endowed Chair Professor in Photonics and Nanoelectronics at Lehigh University, and he also serves as the Smith Family Endowed (Founding) Director of the Center for Photonics and Nanoelectronics (CPN) at Lehigh. Dr. Tansu's research works cover both the theoretical and experimental aspects of the physics of semiconductor optoelectronics materials and devices, the physics of low-dimensional semiconductor (nanostructure), and MOCVD and device fabrications of III-Nitride and III-V-Nitride semiconductor optoelectronics devices on GaAs, InP, and GaN substrates. Up to today, Dr. Tansu has published in more than 270+ refereed international journal (98) and conference (170+) publications, and he holds several US patents (total > 14). Dr. Tansu serves as the Primary Guest Editor of the IEEE Journal of Selected Topics in Quantum Electronics (2008-2009) and IEEE / OSA Journal of Display Technology (2012-2013), and he also serves as an Associate Editor for IEEE Photonics Journal (2009-present), Associate Editor for OSA Optical Materials Express (2010-present), Associate Editor for Semiconductor Photonics and Technology (2011-present), Assistant / Associate Editor for Nanoscale Research Letters (2007-present), Associate Editor for IEEE / OSA Journal of Display Technology (2013-present), Associate Editor for Journal of Photonics for Energy (2013-present), Editorial Board for Photonics (2012-present), and Editor-in-Chief for Photonics (2013-present), and Editorial Board Member for Nature's Scientific Reports (2014-present). Dr. Tansu has also served as the Technical Program Committee for several major technical conferences for IEEE, OSA, SPIE, and APS; the selected lists include: IEEE / OSA Conference on Lasers and Electro-Optics (2007, 2008, 2009, 2013, 2014), SPIE Photonics West (2009, 2010, 2011, 2012, 2013, 2014, 2015), APS March Annual Meeting (2007, 2009, 2010, 2011), ACP (2012, 2013, 2014), and others. Dr. Tansu was also selected as Invited General Participant at the 2008 National Academy of Engineering (NAE)'s U.S. Frontiers of Engineering (FOE) Symposium, and he served as the Organizing Committee for the 2009 NAE's U.S. Frontiers of Engineering Symposium. Recently, Dr. Tansu has also been invited to participate in the NAE's 2012 German-American Frontiers of Engineering Symposium (GAFOE), and NAE's 2014 Japan-American Frontiers of Engineering Symposium (JAFOE).

Lecture Title(s)

Physics and Devices of III-Nitride Heterostructures for Energy and Photonics Applications

The rapid advances in compound semiconductor heterostructures technologies have resulted in significant impacts in the fields of electronics, communications, energy, and medical technologies. The engineering of heterostuctures in semiconductors is important for enabling the control of both electronics and optoelectronics properties in compound semiconductor heterojunctions. The use of III-Nitride and III-V-Nitride semiconductors have been extensively investigated in the past decade, and recent progress have resulted in improved understanding of the physics and material synthesis applicable for implementation in device technologies. Specifically, the III-Nitride semiconductors have significant applications for lasers and energy-efficient technologies including solid state lighting and other energy efficiency device technologies. The use of InGaN has tremendous applications for achieving high efficiency light-emitting diodes in the visible spectral regimes. The polar nature of the III-Nitride semiconductors have resulted in charge separation effect, and the quantum engineering of the active regions are presented as a mechanism for achieving high internal quantum efficiency and suppressing efficiency-droop in light-emitting diodes. Other methods by using surface plasmon coupled active regions and semiconductor epitaxy on nano-patterned substrates will also be presented. The physics of internal quantum efficiency and efficiency-droop in III-Nitride based LEDs and lasers will be discussed. The use of self-assembled colloidal based microlens arrays and diblock copolymer lithography in III-Nitride semiconductors will also be presented for achieving improved optoelectronics devices. The basic sciences and technologies described here have also been successfully transferred to industry implementation. Recent works by using III-Nitride heterostructures in deep UV lasers, thermoelectricity, solar hydrogen, and terahertz photonics will be covered.

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