Modeling accuracy and TAT improvements for next generation mask error correction

Alex Zepka; Folarin Latinwo; Ryan Chen; Jack Chen

doi:10.1117/12.2660436

28 April 2023 Modeling accuracy and TAT improvements for next generation mask error correction

Alex Zepka, Folarin Latinwo, Ryan Chen, Jack Chen

Proceedings Volume 12495, DTCO and Computational Patterning II; 124950Q (2023) https://doi.org/10.1117/12.2660436
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

For advanced technology nodes, leading edge mask fidelity is ensured by applying a mask error correction (MEC) solution that mitigates the distortions caused by the many proximity effects present while manufacturing these masks. The centerpiece of the MEC solution is a compact model that captures these systematic effects and allows the accurate prediction of the printed signature on the mask for any layout slated for the process in consideration. In addition, time and resources constraints at the fab dictate that the model must be efficient enough to make the actual step of correcting the mask a fast and practical one. The introduction of advanced modeling schemes based on machine learning is providing new dimensions for the exploration of this perennial balance between accuracy and speed, including in the context of lithography mask models. This has been a focus of development at Synopsys as multiple routes have been implemented, with promising outcomes for mask model accuracy and correction turnaround time (TAT) performance. This paper provides examples of the improvements as well as comparisons between the different approaches, showing how deep learning can be leveraged to significantly increase mask model accuracy while keeping simulation and correction TAT within acceptable limits.

Conference Presentation

Citation Download Citation

Alex Zepka, Folarin Latinwo, Ryan Chen, and Jack Chen "Modeling accuracy and TAT improvements for next generation mask error correction", Proc. SPIE 12495, DTCO and Computational Patterning II, 124950Q (28 April 2023); https://doi.org/10.1117/12.2660436

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