Combination of thermal scanning probe lithography and directed self-assembly of block copolymers for quantum device fabrication

In the developing field of semiconductor quantum device fabrication one of the biggest challenges to face at present is the development of an appropriate lithography scheme. Because of the nanometric feature sizes and high feature density typical in semiconductor quantum devices, state of the art lithography will be needed. In this work, we propose the combination of top-down thermal scanning proble lithography (t-SPL) and bottom-up directed self-assembly (DSA) of block copolymers (BCP) as a suitable lithography process for the fabrication of these devices. The high overlay alignment accuracy inherent in t-SPL patterning and the pattern resolution improvement brought by the DSA of BCP has the potential to suffice the high resolution and high overlay alignment control necessary in semiconductor quantum device fabrication.