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Nanoepitaxy: Materials and Devices IV
Editor(s): Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam
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Volume Details

Volume Number: 8467
Date Published: 19 October 2012

Table of Contents
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Front Matter: Volume 8467
Author(s): Proceedings of SPIE
Biofunctionalization of Si nanowires using a solution based technique
Author(s): Elissa H. Williams; Albert V. Davydov; Vladimir P. Oleshko; Nancy J. Lin; Kristen L. Steffens; Amy K. Manocchi; Sergiy Krylyuk; Mulpuri V. Rao; John A. Schreifels
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Light extraction in individual GaN nanowires on Si for LEDs
Author(s): Jordan Chesin; Xiang Zhou; Silvija Gradečak
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MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color
Author(s): Hao-Chung Kuo; Yuh-Jen Cheng
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Indium phosphide nanowire network: growth and characterization for thermoelectric conversion
Author(s): Kate J. Norris; Junce Zhang; David M. Fryauf; Alison Rugar; Amanda Flores; Timothy J. Longson; Andrew J Lohn; Nobuhiko P Kobayashi
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Novel optical properties of Ag films deposited by plasma enhanced atomic layer deposition (PEALD)
Author(s): S. M. Prokes; O. J. Glembocki; E. Cleveland
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Plasma enhanced atomic layer deposition of silver thin films for applications in plasmonics and surface enhanced Raman scattering
Author(s): Erin R. Cleveland; Orest Glembocki; S. M. Prokes
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Enhanced field ionization current enabled by gold induced surface states to silicon nanowires
Author(s): Hakan Karaagac; M. Saif Islam
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Graded nanowire ultraviolet LEDs by polarization engineering
Author(s): Santino D. Carnevale; Thomas F. Kent; Patrick J. Phillips; A.T.M. Golam Sarwar; Robert F. Klie; Siddharth Rajan; Roberto C. Myers
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Heterogeneous integration of epitaxial nanostructures: strategies and application drivers
Author(s): Chi On Chui; Kyeong-Sik Shin; Jorge Kina; Kun-Huan Shih; Pritish Narayanan; C. Andras Moritz
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Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition
Author(s): Andrew J. Lohn; Noel Dawson; Robert Cormia; David Fryauf; Junce Zhang; Kate J. Norris; Nobuhiko P. Kobayashi
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High electron mobility AlGaN/AlN/GaN HEMT structure with a nano-scale AlN interlayer
Author(s): Shih-Chun Huang; Wen-Ray Chen; Yu-Ting Hsu; Jia-Ching Lin; Kuo-Jen Chang; Wen-Jen Lin
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3D silicon micro-pillars/-walls decorated with aluminum-ZnO/ZnO nanowires for opto-electronic device applications
Author(s): Hakan Karaagac; Logeeswaran V. J.; M. Saif Islam
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Contact metal effects in indium phosphide nanowire transistor
Author(s): Jin-woo Han; Andrew J. Lohn; Meyya Meyyappan; Nobuhiko P. Kobayashi
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