Share Email Print
cover

PROCEEDINGS VOLUME 8262

Gallium Nitride Materials and Devices VII
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 8262
Date Published: 15 March 2012

Table of Contents
show all abstracts | hide all abstracts
Front Matter: Volume 8262
Author(s): Proceedings of SPIE
High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput
Author(s): Koh Matsumoto; Akinori Ubukata; Kazutada Ikenaga; Kazuki Naito; Jun Yamamoto; Yoshiki Yano; Toshiya Tabuchi; Akira Yamaguchi; Yuzaburo Ban; Kosuke Uchiyama
Show Abstract
Pyramid nano-voids in GaN and InGaN
Author(s): A. B. Yankovich; A. V. Kvit; H. Y. Liu; X. Li; F. Zhang; V. Avrutin; N. Izyumskaya; Ü. Özgür; H. Morkoc; P. M. Voyles
Show Abstract
GaN substrates with variable vicinal angles for laser diode applications
Author(s): Marcin Sarzyński; Tadeusz Suski; Grzegorz Staszczak; Piotr Perlin; Michał Leszczyński; Anna Reszka; Bogdan Kowalski
Show Abstract
Carbon-doped p-type (0001) plane AlGaN (Al=0.06 to 0.55) with high hole density
Author(s): Hideo Kawanishi
Show Abstract
High pressure annealing of Europium implanted GaN
Author(s): K. Lorenz; S. M. C. Miranda; E. Alves; I. S. Roqan; K. P. O'Donnell; M. Boćkowski
Show Abstract
A local vibration mode in a carbon doped (1-101)AlGaN
Author(s): N. Sawaki; K. Hagiwara; K. Yamashita; N. Koide; Y. Honda; M. Yamaguchi; H. Amano
Show Abstract
AlGaN polarization doping effects on the efficiency of blue LEDs
Author(s): Joachim Piprek
Show Abstract
Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques
Author(s): Kęstutis Jarašiūnas; Patrik Ščajev; Saulius Nargelas; Ramūnas Aleksiejūnas; Jacob Leach; Tania Paskova; Serdal Okur; Ümit Özgür; Hadis Morkoç
Show Abstract
Auger effect in nonpolar quantum wells
Author(s): Lukas Schade; Ulrich T. Schwarz; Tim Wernicke; Jens Rass; Simon Ploch; Markus Weyers; Michael Kneissl
Show Abstract
Mg-hydrogen interaction in AlGaN alloys
Author(s): M. E. Zvanut; Ustun R. Sunay; J. Dashdorj; W. R. Willoughby; A. A. Allerman
Show Abstract
Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz
Author(s): Jeng-Wei Yu; Yuh-Renn Wu; Lung-Han Peng
Show Abstract
Hardened planar nitride based cold cathode electron emitter
Author(s): R. Pillai; D. Starikov; C. Boney; A. Bensaoula
Show Abstract
Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy
Author(s): Pinar Dogan; Oliver Brandt; Christian Hauswald; Raffaella Calarco; Achim Trampert; Lutz Geelhaar; Henning Riechert
Show Abstract
Electronic and thermal tuning of violet GaN coupled cavity laser
Author(s): O. Guziy; S. Grzanka; M. Leszczyński; P. Perlin; H. W. M. Salemink
Show Abstract
Lasing action in gallium nitride photonic quasicrystal nanorod arrays
Author(s): Shih-Pang Chang; Kuok-Pan Sou; Jet-Rung Chang; Yuh-Jen Cheng; Yuh-Jing Li; Yi-Chen Chen; Hao-Chung Kuo; Ken-Yuh Hsu; Chun-Yen Chang
Show Abstract
Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices
Author(s): M. Mori; S. Yamamoto; Y. Kuwahara; T. Fujii; T. Sugiyama; M. Iwaya; T. Takeuchi; S. Kamiyama; I. Akasaki; H. Amano
Show Abstract
High efficiency InGaN solar cell with a graded p-InGaN top layer
Author(s): Nobuhiko Sawaki; Tomoki Fujisawa
Show Abstract
Temperature dependent behavior of the SPV for n-type GaN
Author(s): J. D. McNamara; M. Foussekis; H. Liu; H. Morkoç; M. A. Reshchikov; A. A. Baski
Show Abstract
Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS
Author(s): M. Meneghini; C. de Santi; N. Trivellin; K. Orita; S. Takigawa; T. Tanaka; D. Ueda; G. Meneghesso; E. Zanoni
Show Abstract
Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes
Author(s): Piotr Perlin; Tomasz Czyszanowski; Lucja Marona; Szymon Grzanka; Anna Kafar; Szymon Stanczyk; Tadek Suski; Mike Leszczyński; Michal Boćkowski; Grzegorz Muzioł; Maciej Kuc; Robert Sarzała
Show Abstract
Estimation of the recombination coefficients in aged InGaN laser diodes
Author(s): Lucja Marona; Szymon Grzanka; Robert Czernecki; Jakub Goss; Michal Bockowski; Piotr Perlin; Piotr Kruszewski; Mariusz Pluska; Andrzej Czerwinski
Show Abstract
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
Author(s): Jens Rass; Tim Wernicke; Simon Ploch; Moritz Brendel; Andreas Kruse; Andreas Hangleiter; Wolfgang Scheibenzuber; Ulrich T. Schwarz; Markus Weyers; Michael Kneissl
Show Abstract
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
Author(s): L. Redaelli; M. Martens; J. Piprek; H. Wenzel; C. Netzel; A. Linke; Yu. V. Flores; S. Einfeldt; M. Kneissl; G. Tränkle
Show Abstract
Modeling gallium-nitride-based violet lasers for data storage of information technology
Author(s): Meng-Mu Shih
Show Abstract
Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate
Author(s): Jun-Youn Kim; Youngjo Tak; Jaekyun Kim; Hyun-Gi Hong; Suhee Chae; Jae Won Lee; Hyoji Choi; Youngsoo Park; U-In Chung; Jong-Ryeol Kim; Jong-In Shim
Show Abstract
Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion
Author(s): Guangyu Liu; Jing Zhang; Hongping Zhao; Nelson Tansu
Show Abstract
The impact of active layer design on quantum efficiency of InGaN light emitting diodes
Author(s): F. Zhang; X. Li; S. Okur; V. Avrutin; Ü. Özgür; H. Morkoç; S. M. Hong; S. H. Yen; T. S. Hsu; A. Matulionis
Show Abstract
High-voltage thin GaN LEDs array
Author(s): Ray-Hua Horng; Jia-Hua Lin; Dong-Sing Wuu; Re-Ching Lin; Kun-Ching Shen
Show Abstract
VLED for Si wafer-level packaging
Author(s): Chen-Fu Chu; Chiming Chen; Jui-Kang Yen; Yung-Wei Chen; Chingfu Tsou; Chunming Chang; Trung Doan; Chuong Anh Tran
Show Abstract
Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer
Author(s): Shih-Cheng Huang; Kun-Ching Shen; Po-Min Tu; Dong-Sing Wuu; Hao-Chung Kuo; Ray-Hua Horng
Show Abstract
Carbidonitride- and oxycarbidonitride-based phosphors for LED lighting devices
Author(s): Yuanqiang Li; Michael Romanelli; Yongchi Tian
Show Abstract
III-nitride intersubband photonics
Author(s): Salam Sakr; Maria Tchernycheva; Juliette Mangeney; Elias Warde; Nathalie Isac; Lorenzo Rigutti; Raffaele Colombelli; Anatole Lupu; Laurent Vivien; François H. Julien; Alon Vardi; Schmuel E. Schacham; Gad Bahir; Yulia Kotsar; Eva Monroy; Etienne Giraud; Denis Martin; Nicolas Grandjean
Show Abstract
Second harmonic generation in GaN-based photonic crystals for single molecule investigations
Author(s): Dominique Coquillat; Jérémie Torres; Marine Le Vassor d'Yerville; David Cassagne; Frédéric Teppe; Nina Dyakonova; Wojciech Knap; Richard De La Rue; Sophie Bouchoule; Emmanuel Margeat; Catherine Royer
Show Abstract
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
Author(s): T. Malinauskas; A. Kadys; T. Grinys; S. Nargelas; R. Aleksiejūnas; S. Miasojedovas; J. Mickevičius; R. Tomašiūnas; K. Jarašiūnas; M. Vengris; S. Okur; V. Avrutin; X. Li; F. Zhang; Ü. Özgür; H. Morkoç
Show Abstract
Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells
Author(s): Mykhaylo V. Klymenko; Igor A. Sukhoivanov; Oleksiy V. Shulika
Show Abstract
Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions
Author(s): Romualdo A. Ferreyra; Cemil Kayis; Congvong Zhu; Ümit Özgür; Hadis Morkoç
Show Abstract
AlGaN/GaN based field effect transistors for terahertz detection and imaging
Author(s): M. Sakowicz; M. B. Lifshits; O. A. Klimenko; D. Coquillat; N. Dyakonova; F. Teppe; C. Gaquière; M. A. Poisson; S. Delage; W. Knap
Show Abstract
Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects
Author(s): Cemil Kayis; R. A. Ferreyra; Congyong Zhu; Mo Wu; X. Li; Ü. Özgür; A. Matulionis; H. Morkoç
Show Abstract
Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
Author(s): Huei-Min Huang; Tien-Chang Lu; Chiao-Yun Chang; Yu-Pin Lan; Shih-Chun Ling; Wei-Wen Chan; Hao-Chung Kuo; Shing-Chung Wang
Show Abstract
Free-standing a-plane GaN substrates grown by HVPE
Author(s): Yin-Hao Wu; Yen-Hsien Yeh; Kuei-Ming Chen; Yu-jen Yang; Wei-I Lee
Show Abstract
High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer
Author(s): Shih-Cheng Huang; Po-Min Tu; Shun-Kuei Yang; Ya-Wen Lin; Chih-Peng Hsu
Show Abstract
Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier
Author(s): Ching-Hsueh Chiu; Po-Min Tu; Jet-Rung Chang; Wei-Ting Chang; Hao-Chung Kuo; Chun-Yen Chang
Show Abstract
Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
Author(s): N. Izyumskaya; S. J. Liu; V. Avrutin; S. Okur; F. Zhang; Ü. Özgür; S. Metzner; C. Karbaum; F. Bertram; J. Christen; D. J. Smith; H. Morkoç
Show Abstract
Degradation mechanism of InAlN/GaN based HFETs under high electric field stress
Author(s): Congyong Zhu; Mo Wu; Cemil Kayis; Fan Zhang; Xing Li; Romualdo Ferreyra; Vitaliy Avrutin; Ümit Özgur; Hadis Morkoç
Show Abstract
Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes
Author(s): H. Y. Liu; X. Li; F. Zhang; V. Avrutin; N. Izyumskaya; Ü. Özgür; A. B. Yankovich; A. V. Kvit; P. M. Voyles; H. Morkoç
Show Abstract
Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode
Author(s): Sheng-Kun Zhang; Wubao Wang; Robert R. Alfano; Amir M. Dabiran; Andrew M. Wowchak; Peter P. Chow
Show Abstract

© SPIE. Terms of Use
Back to Top