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- Front Matter: Volume 7987
- Silicon Photonics I
- Photonics Integration I
- Silicon Photonics II
- Optical Signal Processing
- Nano-Photonics
- Quantum Dot and Nano-Structures
- UV, Visible, and Infrared Emitters
- Photonics Integration II
- Poster Session
Front Matter: Volume 7987
Front Matter: Volume 7987
Show abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 7987, including the Title Page, Copyright information, Table of Contents, and the Conference Committee listing.
Silicon Photonics I
Drop and split filter in a hole-type photonic crystal
Show abstract
A drop and split filter (DSF) based on a self-collimation ring resonator (SCRR) in a hole-type photonic crystal is
proposed and demonstrated. The DSF performance was investigated with the finite-difference time-domain (FDTD)
simulation technique. By forming three splitters of the SCRR properly, self-collimation light can come out from two
drop ports equally while no light come out from the through port. For the drop wavelength of 1550nm, the free spectral
range is 29.7nm, which covers the whole optical communication C-band window. This DSF may have applications in
photonic integrated circuits.
Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED
Show abstract
The optical and electrical variation green and blue silicon quantum dot (Si-QD) based MOSLED with the
different thickness of SiOx layer has been demonstrated. The turn-on voltage of the Si-QDs based MOSLED
with the different RF plasma power is linearly enlarged by increasing the thickness of the SiOx layer. The turn-on
electric field is still constant at 6.6x106 V/cm. The EL emission power of the blue Si-QD based MOSLED
with increasing the thickness form 150 nm to 350 nm enhances from 55 nW to 470 nW due to the larger Si-QD
amount from 1.5x1018 cm-3 to 4.3x1018 cm-3 in higher thickness. The blue Si-QDs based MOSLED with the
SiOx thickness of 350 nm has the maximum EL power of 470 nW. The EL wavelength of the blue Si-QD based
MOSLED red-shifts from 420 nm to 450 nm when the SiOx thickness increasing from 150 nm to 350 nm. The
red-shifted phenomenon on EL spectra with increasing the thickness could be explained by means of the
relationship between the varied Si-QD size and degraded electron conductivity. The EL wavelength of the Si-QD based MOSLED has a band filling effect phenomenon by the increment of the biased current and thickness.
The distribution of Si-QD was uniform in whole SiOx layer although there existed different Si-QD size.
Photonics Integration I
Experimental demonstration of the corrugation pitch modulated DFB semiconductor laser based on the reconstruction-equivalent-chirp technology
Show abstract
A corrugation-pitch-modulated (CPM) distributed feedback (DFB) semiconductor laser based on
reconstruction-equivalent-chirp (REC) technology is first experimentally demonstrated. The laser can suppress
spatial hole burning (SHB) effectively and operates in good stable single longitudinal mode even the injection
current very high.
Simulation of radiation coupling by complex coupled-mode theory
Show abstract
Resonant coupling to radiation field in optical waveguides is simulated accurately and efficiently by complex coupled
mode theory. Salient features of complex mode theory are demonstrated by investigation of transmission spectra in
short/long period gratings.
Silicon Photonics II
InP lateral overgrowth technology for silicon photonics
Show abstract
Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform
for active silicon photonic components. By fabricating silicon oxide mask on top of a thin InP seed layer, we
can use the so called defect necking effect to filter out the threading dislocations propagating from the seed
layer. By optimizing the process, thin dislocation free InP layers have been successfully obtained on top of
silicon wafer. The obtained characterization results show that the grown InP layer has very high quality,
which can be used as the base for further process of active photonic components on top of silicon.
Chirp characteristics of silicon Mach-Zehnder modulators
Show abstract
Chirp characteristics of silicon based Mach-Zehnder-interferometer (MZI) modulators with PIN diode and PN diode are
fully analyzed, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier
absorption effect, the amplitude and frequency of applied sinusoidal modulating signals
Optical Signal Processing
New saturable absorber device for high bit rate all-optical regeneration
Jean-Louis Oudar,
Hoang Trung Nguyen,
Guy Aubin,
et al.
Show abstract
Recent results on a new multiple-quantum-well saturable absorber (SA) device allowing fast responding power
stabilization are reviewed. Combined with the classical SA achieving extinction ratio improvement, it allows all-optical
amplitude-shift-keying 2R signal regeneration. Furthermore its phase-preserving characteristics make it potentially
useful to prevent phase noise accumulation in phase encoded signals.
Photonic generation of power-efficient ultra-wideband waveforms using a single semiconductor optical amplifier
Show abstract
A novel photonic generation of power-efficient ultra-wideband (UWB) pulse by combining two asymmetric monocycle
pulses with inverted polarities is experimentally demonstrated. The principle lies in cross-phase modulation (XPM) in a
single semiconductor optical amplifier (SOA) and phase modulation to intensity modulation conversions in an arrayed-waveguide
grating (AWG). The Federal Communications Committee (FCC) compliant UWB pulse gains 24.3 dB and
20.8 dB improvements compared to positive and negative monocycle pulses after power attenuation to respect the FCC
spectral mask, respectively. The generated power-efficient UWB with pulse duration of about 310 ps has potential to
achieve high speed transmission and modulation without overlapping and distortion.
Broadband optical parametric amplifier in ultra-compact plasmonic waveguide
Show abstract
We propose an ultra-broadband optical parametric amplifier (OPA) employing step-structure hybrid plasmonic
waveguide with ultra-high nonlinearity. The proposed parametric amplifier possesses a net signal gain of larger than
14 dB and a 3-dB bandwidth of over 200 nm covering C-band, L-band, and S-band.
Nano-Photonics
Efficient coupler between silicon waveguide and hybrid plasmonic waveguide
Show abstract
We experimentally demonstrate an efficient coupler between a silicon waveguide and a hybrid
plasmonic waveguide for the wavelength range 1460-1540 nm. The coupling efficiency for a single
coupler is ~70% in the whole spectrum range which is consisted with the theoretical prediction. Such
compact, efficient plasmonic couplers provide a promising platform for integrated photonic circuits.
Quantum Dot and Nano-Structures
The preferential nucleation sites of self-assembled quantum dots with the influence of interfacial dislocation network
Show abstract
The strain field and elastic energy due to interfacial misfit dislocation networks near the free surface
have been calculated analytically. The result predicted the preferential nucleation sites of
self-assembled quantum dots with the influence of dislocation networks. Compared with Green
function method, our solution is simple, direct and can solve the problem completely.
QD fiber amplifier using a fiber coupler with a PbS QD-film
Show abstract
A semiconductor QD fiber amplifier (SQDFA) is proposed and theoretically researched. The fiber amplifier makes use
of a tapered twin SMF coupler and a PbS QD-film is coated on the surface of it. In the tapered region, QDs will be
excited by the evanescent wave of a pump and produce a gain on signal. The fiber coupler is properly designed to ensure
a desired power ratio of the output signal. Using a 1530-nm signal and a 980-nm pump, an optical gain of about 8 dB is
achieved with a gain efficiency of 3.48dB/cm. This SQDFA has unique advantages including suppression to the
amplified spontaneous emission (ASE), simple fabrication and lower insertion loss and thus has a great potential in fiber
communication systems.
Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials
Show abstract
It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum well (QW) materials is
broadened resulting from band-tailing, localised states or conduction band edge fluctuations. In this paper we develop a
model for N compositional fluctuations causing conduction band edge fluctuations which localise the electrons into the
resulting quantum dots (QDs). The electron dynamics in the QDs and QW states are examined using a rate equation
approach and the carrier populations presented as a function of barrier height and temperature. This mechanism could
lead to broad gain in GaInAsN QW structures which could be useful for broad band SOAs for optical communications.
Phonon engineering in nanoscale layered structures
Show abstract
Thermal conductivity in GaN/AlGaN heterostructures is investigated by solving the steady-state phonon
Boltzman equation in the relaxation-time approximation using phonon density of state, average group velocity and
phonon relaxation time. In this paper dispersion curves, group velocity, density of states of energy, relaxation time of
phonon and finally thermal conduction of several types of symmetric and asymmetric nanostructures are simulated.
It has been concluded that proper selection of layer widths yields minimum thermal conduction in the considered
structure. Also, making the structure asymmetric, affects the thermal conduction.
UV, Visible, and Infrared Emitters
Advances of AlGaN-based high-efficiency deep-UV LEDs
Show abstract
We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs)
with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on
sapphire. High internal quantum efficiency (IQE) of 50-80% was observed from AlGaN or quaternary InAlGaN MQWs
by fabricating them on low TDD AlN templates. Also, an electron injection efficiency (EIE) was markedly improved by
using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256-275 nm LEDs, which will be
useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247
and 270 nm AlGaN-LEDs, respectively.
Towards high-performance injectorless quantum cascade lasers in the mid-infrared
Show abstract
Injectorless quantum cascade lasers are lately getting more and more into focus of research,
as they promise lower threshold current densities and higher output powers and efficiencies. Although
the research on them started seven years later in 2001 and was less intensive, they have achieved
much lower threshold current densities with 0.45 kA/cm2 at 300 K compared to injectorbased devices.
Additionally injectorless devices reached efficiencies and output powers in the important wavelength
range between 8 and 12 μm comparable to best performing injectorbased devices. With 2 W per facet
and an overall efficiency of 7 % around 9 μm, they show a strong potential regarding possible
applications.
Photonics Integration II
Research status of electro-absorption modulated lasers
Show abstract
This paper will introduce the fabrication methods of electro-absorption modulated lasers (EMLs) and the latest
results of EMLs fabricated by a novel technology named selective area growth double-stack active layer
(SAG-DSAL) developed by the authors.
Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier
Show abstract
More than 11mW output powers for all wavelengths from the fiber and over 49 nm range tuning in sampled
grating distributed Bragg reflector laser with an integrated semiconductor optical amplifier which is enabling
access to 110 ITU 50GHz channels is demonstrated. Tilted amplifier and anti-reflection facet coating are
used to suppress reflection.
The theoretical and numerical models of the novel and fast tunable semiconductor ring laser
Show abstract
Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching
networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers,
etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have
better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with
the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material
system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding
to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode
competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the
process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser.
Finally some discussion of the impact of several key parameters was given.
A tunable and switchable single-longitudinal-mode dual-wavelength fiber laser for microwave generation
Show abstract
A tunable and switchable single-longitudinal-mode (SLM) dual-wavelength fiber laser incorporating a reconfigurable
dual-pass Mach-Zehnder interferometer (MZI) filter and its application in microwave generation was proposed and
demonstrated. By incorporating a dual-pass MZI into an erbium-doped fiber ring cavity, tunable and switchable SLM
dual-wavelength operation can be conveniently realized.
Poster Session
Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants
Jingwei Guo,
Hui Huang,
Minjia Liu,
et al.
Show abstract
N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS)
mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for
GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is
found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux
rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without
any stacking faults from bottom to top for all three samples were achieved.
Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer
Show abstract
Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown on
GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of InxGa1-xAs on the structural and optical properties of QDMs are investigated by using atomic force microscopy and
photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely
spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs
are observed, which make QDM a potential candidate for broadband optical devices.
Synthesis of chirped quasi-phase-matching grating by discrete layer-peeling method
Show abstract
A method to reconstruct a chirped quasi-phase-matching grating by using a discrete layer-peeling algorithm is
demonstrated. The coupling distribution and grating structure can be synthesized from the transmission spectrum.
Experimental verification shows that the method can reconstruct the grating distribution efficiently. This method can be
used an efficient approach of quality inspection on quasi-phase-matching grating.
An all-optical UWB generation and modulation scheme for multiuser UWB-over-fiber system
Show abstract
An all-optical UWB pulses generation and modulation scheme based on a semiconductor optical amplifier and a DWDM
is proposed and demonstrated, which has potential applications in multiuser UWB-Over-Fiber communications systems.
Using proposed scheme, pulse amplitude modulation (PAM), pulse polarity modulation (PPM) and pulse shape
modulation (PSM) can be conveniently realized.
Combined simulation technique for design of silicon-based laterally coupled racetrack microring resonators
Show abstract
The microring resonator is a high-performance and low-cost optical waveguide device, suitable for integration with large
dimensions. This paper presents the design of laterally coupled racetrack microring resonators working around 1.55μm,
using combinations of the 3D full vectorial film mode matching method, the coupled mode theory and the parameter
model. This combined simulation technique shows convenience to perform the design process.
Numerical analyses of all-optical gate switches using cascaded second-order nonlinear effect in periodically poled lithium niobate devices: effects of device fabrication errors
Yutaka Fukuchi,
Shun Tasaki
Show abstract
We numerically calculate the switching performance of all-optical ultra-fast gate switches employing the cascade of
second harmonic generation and difference frequency mixing in periodically poled lithium niobate devices. In the
analyses, the device fabrication errors are considered. We show that the domain length error decreases the switching
efficiency significantly.
All-optical decision gate circuit employing cascaded quasi-phase matched lithium niobate device
Yutaka Fukuchi,
Shun Tasaki
Show abstract
We propose a cascaded quasi-phase matched (QPM) lithium niobate (LN) device. In the device, two QPM-LN crystals
with different domain inversion periods are cascaded. We numerically show that the cascaded QPM-LN device has an
all-optical decision gate function, thus enabling a compact and stable 3R circuit.
Raman scattering enhancement characteristic of Nb-doped silica fiber
Show abstract
Raman scattering enhancement characteristic of a new kind of Nb-doped silica fiber has been studied in this paper. This
Nb-doped special silica optical fiber is fabricated on Modified Chemical Vapor Deposition (MCVD) (which is the
traditional fiber preform fabrication technologies) combined with Atomic Layer Deposition (ALD). Meanwhile, Raman
spectrum of different length Nb-doped special silica optical fiber samples has been measured with the 785nm exciting
light. Then, it develops the measurement comparison between Nb-doped special silica optical fiber and conventional
single-mode optical fiber in the wavelength range from 820nm to 920nm. The measuring results indicate that the new
Nb-doped special silica optical fiber shows higher Raman scattering intensity compared with conventional single-mode
optical fiber. On the other hand, the inferred spectrum of the new Nb-doped special silica optical fiber is also measured,
and its measurement wavenumber range is from 400 cm-1 to 4000 cm-1. Finally, the loss spectrum of the Nb-doped
special silica optical fiber is measured and its loss at 1550nm is 0.01dB/m.
A dual polarization optical 90 degree-hybrid in silicon-on-insulator waveguides
Show abstract
An all-passive dual polarization optical 90°-hybrid in silicon-on-insulator waveguides is proposed and designed. It
consists of two 2x2 MMI-MZI structures, working as polarization beam splitters, and two 4x4 MMI couplers,
working as 90°-hybrids. The fabrication process includes only one step of inductively coupled plasma (ICP) etching. It is
particularly suitable for silicon-based integration of DP-QPSK receiver.
Design and implementation of programmable semiconductor pulse seed laser used in MOPA
Show abstract
A high-speed programmable semiconductor pulse seed laser, with maximum 20A peak current, and 10Hz-1MHz
continuously adjustable repetition frequency, 16ns-1μs continuously adjustable pulse width was designed for MOPA
pulsed fiber laser. The experiment results show that this programmable semiconductor pulse seed laser works stably.
Three-wave conversions of light pulses in all-optically polled glass materials
V. A. Smirnov,
L. I. Vostrikova,
O. S. Schavelev,
et al.
Show abstract
The three-wave conversions (such as the nonlinear generation of light pulses of second harmonic frequency and
parametric amplification of light signals), photo-induced in all-optically polled glasses materials, have been investigated.
Theoretical considerations of the investigated phenomena show the interesting peculiarities of the process of three-wave
conversions in photo-integrated volumetric micro-structures of nonlinear polarizability with the existence of a regime of
synchronous two-beam transformations of light pulses. During the experimental investigation of the phenomena in the
bulk oxide glasses the complicated kinetics of the formation of second-order polarizability gratings has been detected.
Some properties of the phenomena have been studied and the possible mechanisms of the dynamics of processes are
discussed.
Effect of metal nanoparticles on absorption enhancement in organic solar cells
Show abstract
In this study, for increasing absorption of the active layer in bulk heterojunction (BHJ) organic solar cells
(OSCs), we used surface Plasmon effect. For showing the results, we investigated the proposed structure with Finite
Difference Time Domain (FDTD) numerical method and achieved electromagnetic field characters. It is shown that
the proposed structure enhance the absorption coefficient as well as bandwidth.
Light-induced scattering in CdSe quantum dots
Show abstract
The CdSe quantum dots have been synthesized and their optical properties have been investigated at 775 nm. It was
found that both linear absorption and linear scattering were negligible in these colloidal cadmium selenide quantum dots
when the light intensity was weak. A strong light-induced scattering was observed when a strong 150 fs Ti:Sapphire
laser incident on the sample. The physical origins and the possible photonic applications of this phenomenon were
investigated.
Improved dual-wavelength-pumped supercontinuum generation in an all-fiber device
Show abstract
we propose the improved dual-wavelengthpumped scheme based on the former work (C.Xiong et al, Journal of lightwave tech. 27, 1638-1643(2009)), which can obviously increase the power at the visible wavelengths and effectively improve the flatness of spectra by solving the Generalized Nonlinear Schrödinger Equation with the
adaptive split-step Fourier method and simulating
supercontinuum generation.