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PROCEEDINGS VOLUME 7638

Metrology, Inspection, and Process Control for Microlithography XXIV
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Volume Details

Volume Number: 7638
Date Published: 15 March 2010

Table of Contents
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Front Matter: Volume 7638
Author(s): Proceedings of SPIE
3D-AFM enhancement for CD metrology dedicated to lithography sub-28-nm node requirements
Author(s): J. Foucher; N. Rana; C. Dezauzier
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Robust characterization of small grating boxes using rotating stage Mueller matrix polarimeter
Author(s): M. Foldyna; A. De Martino; C. Licitra; J. Foucher
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CDSEM focus/dose monitor for product applications
Author(s): Chas Archie; Eric Solecky; Pawan Rawat; Timothy Brunner; Kenji Yoshimoto; Roger Cornell; Ofer Adan
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Improving lithographic performance for 32 nm
Author(s): Jens Busch; Anne Parge; Rolf Seltmann; Heike Scholtz; Bernd Schultz; Uwe Knappe; Matthias Ruhm; Marc Noot; Dieter Woischke; Paul Luehrmann
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New exposure tool management technology with quick focus measurement in half pitch 22nm generation
Author(s): Kazuhiko Fukazawa; Toshiaki Kitamura; Shinsuke Takeda; Yoshihiko Fujimori; Yuji Kudo; Shigeru Hirukawa; Kengo Takemasa; Noriaki Kasai; Yuuichiro Yamazaki; Kiminori Yoshino
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Full wafer macro-CD imaging for excursion control of fast patterning processes
Author(s): Lars Markwort; Christoph Kappel; Reza Kharrazian; Pierre-Yves Guittet
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Focus and dose deconvolution technique for improved CD control of immersion clusters
Author(s): Anne-Laure Charley; Koen D'havé; Philippe Leray; David Laidler; Shaunee Cheng; Mircea Dusa; Paul Hinnen; Peter Vanoppen
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A single metrology tool solution for complete exposure tool setup
Author(s): David Laidler; Koen D'havé; Anne-Laure Charley; Philippe Leray; Shaunee Cheng; Mircea Dusa; Peter Vanoppen; Paul Hinnen
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Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm
Author(s): Bertrand Le Gratiet; Frank Sundermann; Jean Massin; Marianne Decaux; Nicolas Thivolle; Fabrice Baron; Alain Ostrovsky; Cedric Monget; Jean Damien Chapon; Yoann Blancquaert; Karen Dabertrand; Lionel Thevenon; Benedicte Bry; Nicolas Cluet; Bertrand Borot; Raphael Bingert; Thierry Devoivre; Pascal Gourard; Laurène Babaud; Ute Buttgereit; Robert Birkner; Mark Joyner; Erez Graitzer; Avi Cohen
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Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping field CDU on advanced production devices
Author(s): Dae Jong Kim; Hyung Won Yoo; Chul Hong Kim; Hak Kwon Lee; Sung Su Kim; Koon Ho Bae; Hedvi Spielberg; Yun Ho Lee; Shimon Levi; Yariv Bustan; Moshe Rozentsvige
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Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements
Author(s): Ute Buttgereit; Robert Birkner; Thomas Scheruebl; Sander de Putter; Bernardo Kastrup; Jo Finders
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New measurement technology for CD and pattern profile variation using optical Fourier space
Author(s): Fuminori Hayano; Akitoshi Kawai; Toshio Uchikawa; Kazumasa Endo; Kiminori Yoshino; Yuuichiro Yamazaki; Kuniharu Nagashima; Kenji Tsuchiya
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Application of automated topography focus corrections for volume manufacturing
Author(s): Timothy J. Wiltshire; Bernhard R. Liegl; Emily M. Hwang; Mark R. Lucksinger
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Defect metrology challenges at the 11-nm node and beyond
Author(s): Timothy F. Crimmins
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Systematic and random defects control with design-based metrology
Author(s): Hyunjo Yang; Jungchan Kim; Taehyeong Lee; Areum Jung; Gyun Yoo; Donggyu Yim; Sungki Park; Toshiaki Hasebe; Masahiro Yamamoto
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The limits and extensibility of optical patterned defect inspection
Author(s): Richard M. Silver; Bryan M. Barnes; Yeungjoon Sohn; Richard Quintanilha; Hui Zhou; Chris Deeb; Mark Johnson; Milton Goodwin; Dilip Patel
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Advanced lithography: wafer defect scattering analysis at DUV
Author(s): Doron Meshulach; Ido Dolev; Yuuichiro Yamazaki; Kenji Tsuchiya; Makoto Kaneko; Kiminori Yoshino; Takayoshi Fujii
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After development inspection defectivity studies of an advanced memory device
Author(s): Hyung-Seop Kim; Byoung-Ho Lee; Eric Ma; Fei Wang; Yan Zhao; Kenichi Kanai; Hong Xiao; Jack Jau
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Defectivity decrease in the photolithography process by AMC level reduction through implementation of novel filtration and monitoring solutions
Author(s): Nicolas Pic; Christophe Martin; Michel Vitalis; Thierry Calarnou; Daniel Camlay; Catherine Grosjean; Arnaud Lanier; Jost Kames; Alexander Acksel; Christophe Galvez
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Statistically accurate analysis of line width roughness based on discrete power spectrum
Author(s): Atsushi Hiraiwa; Akio Nishida
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Measurements and sensitivities of LWR in poly spacers
Author(s): Guy Ayal; Eitan Shauly; Shimon Levi; Amit Siany; Ofer Adan; Yosi Shacham-Diamand
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LER detection using dark field spectroscopic reflectometry
Author(s): Boaz Brill; Shahar Gov; Dani Hak; Valery Sorin; Tal Marcu; Benjamin Bunday
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CD-SEM metrology of spike detection on sub-40 nm contact holes
Author(s): Yoshinori Momonoi; Taro Osabe; Atsuko Yamaguchi; Erin Mclellan Martin; Hajime Koyanagi; Matthew E. Colburn; Kazuyoshi Torii
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Model-based analysis of SEM images to automatically extract linewidth, edge roughness, and wall angle
Author(s): S. Babin; K. Bay; M. Machin
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Proximity-associated errors in contour metrology
Author(s): John S. Villarrubia; Ronald G. Dixson; András E. Vladár
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Monitoring and characterization of metal-over-contact based edge-contour extraction measurement followed by electrical simulation
Author(s): Eitan Shauly; Israel Rotstein; Ishai Schwarzband; Ofer Edan; Shimon Levi
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Electrical validation of through process OPC verification limits
Author(s): Omprakash Jaiswal; Rakesh Kuncha; Taksh Bharat; Vipin Madangarli; Edward Conrad; James Bruce; Sajan Marokkey
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Computational inspection applied to a mask inspection system with advanced aerial imaging capability
Author(s): Linyong Pang; Danping Peng; Lin He; Dongxue Chen; Thuc Dam; Vikram Tolani; Aviram Tam; Wolf Staud
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Hybrid reference metrology exploiting patterning simulation
Author(s): Narender Rana; Chas Archie
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Scatterometry metrology validation with respect to process control
Author(s): Philippe Leray; Shaunee Cheng; David Laidler; Koen D'havé; Anne-Laure Charley
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Smaller, smarter, faster, and more accurate: the new overlay metrology
Author(s): Nelson M. Felix; Allen H. Gabor; William A. Muth; Christopher P. Ausschnitt
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Calibration of 25-nm pitch grating reference by high-resolution grazing incidence x-ray diffraction
Author(s): Yoshiyasu Ito; Kazuhiko Omote; Yuko Okazaki; Yoshinori Nakayama; Hiroki Kawada
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A new x-ray metrology for determining cross-sectional profile of semiconductor device pattern
Author(s): Kazuhiko Omote; Yoshiyasu Ito; Yuko Okazaki
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Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering
Author(s): Y. Ishibashi; T. Koike; Y. Yamazaki; Y. Ito; Y. Okazaki; K. Omote
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Nanofabrication with a helium ion microscope
Author(s): Diederik Maas; Emile van Veldhoven; Ping Chen; Vadim Sidorkin; Huub Salemink; Emile . van der Drift; Paul Alkemade
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IR microscopy as an early electrical yield indicator in bonded wafer pairs used for 3D integration
Author(s): Andrew C. Rudack; Pratibha Singh; J. Christopher Taylor; Vadim Mashevsky
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Enhanced capture rate for haze defects in production wafer inspection
Author(s): Ditza Auerbach; Adi Shulman; Moshe Rozentsvige
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Preliminary results for photomask haze mitigation in a fab environment
Author(s): Thomas Ku; Jeff LeClaire; Sia Kim Tan; Gek Soon Chua; Ron Bozak; Roy White; Tod Robinson; Michael Archuletta; David Lee
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Use of wafer backside inspection and SPR to address systemic tool and process issues
Author(s): Alan Carlson; Prasad Bachiraju; Jennifer Clark; Dale Trost
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Reticle haze control: global update and technology roadmap
Author(s): Oleg Kishkovich; Tom Kielbaso; David Halbmaier
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Reference material (RM) 8820: a versatile new NIST standard for nanometrology
Author(s): Michael T. Postek; Andras E. Vladar; William Keery; Michael Bishop; Benjamin Bunday; John Allgair
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Dimensional metrology with sub-nanometer uncertainty: unique role of AFM as the reference
Author(s): Vladimir A. Ukraintsev; Johann Foucher
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Calibration of 1-nm SiC step height standards
Author(s): T. V. Vorburger; A. Hilton; R. G. Dixson; N. G. Orji; J. A. Powell; A. J. Trunek; P. G. Neudeck; P. B. Abel
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Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope
Author(s): R. Quintanilha; Y. J. Sohn; B. M. Barnes; R. Silver
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Effect of bandwidth and numerical aperture in optical scatterometry
Author(s): Thomas A. Germer; Heather J. Patrick
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Use of multiple azimuthal angles to enable advanced scatterometry applications
Author(s): Matthew Sendelbach; Alok Vaid; Pedro Herrera; Ted Dziura; Michelle Zhang; Arun Srivatsa
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Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry gratings
Author(s): Alok Vaid; Matthew Sendelbach; Daniel Moore; Timothy Brunner; Nelson Felix; Pawan Rawat; Cornel Bozdog; Helen Kim; Michael Sendler; Stanislav Stepanov; Victor Kucerov
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Stability of polarimetric grating characterization with beam spot larger than grating box
Author(s): M. Foldyna; C. Licitra; A. De Martino
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Scatterometry characterization of spacer double patterning structures
Author(s): Prasad Dasari; Jiangtao Hu; Zhuan Liu; Asher Tan; Oleg Kritsun; Catherine Volkman; Chris Bencher
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Sub-nanometer calibration of CD-SEM line width by using STEM
Author(s): Kiyoshi Takamasu; Kazuki Kuwabara; Satoru Takahashi; Takeshi Mizuno; Hiroki Kawada
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Electron-beam induced photoresist shrinkage influence on 2D profiles
Author(s): Benjamin Bunday; Aaron Cordes; John Allgair; Daniel Bellido Aguilar; Vasiliki Tileli; Bradley Thiel; Yohanan Avitan; Ram Peltinov; Mayaan Bar-Zvi; Ofer Adan; Konstantin Chirko
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SEM image modeling using the modular Monte Carlo model MCSEM
Author(s): K.-P. Johnsen; C. G. Frase; H. Bosse; D. Gnieser
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A comparison of advanced overlay technologies
Author(s): Prasad Dasari; Nigel Smith; Gary Goelzer; Zhuan Liu; Jie Li; Asher Tan; Chin Hwee Koh
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Detection of lateral CD shift with scatterometry on grating structures in production layout
Author(s): Jacky Huang; Jiarui Hu; Willie Wang; Ya-Ping Lee; Chih-Ming Ke; Tsai-Sheng Gau
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Automated optimized overlay sampling for high-order processing in double patterning lithography
Author(s): Chiew-seng Koay; Matthew E. Colburn; Pavel Izikson; John C. Robinson; Cindy Kato; Hiroyuki Kurita; Venkat Nagaswami
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A novel robust diffraction-based metrology concept for measurement and monitoring of critical layers in memory devices
Author(s): Boo-Hyun Ham; Hyun-Jea Kang; Chan Hwang; Jeong-Ho Yeo; Cheol-Hong Kim; Suk-Woo Nam; Joo-Tae Moon; Martyn Coogans; Arie den Boef; Chan-Ho Ryu; Stephen Morgan; Andreas Fuchs
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Concerning the influence of pattern symmetry on CD-SEM local overlay measurements for double patterning of complex shapes
Author(s): Shoji Hotta; Takumichi Sutani; Akiyuki Sugiyama; Masahiko Ikeno; Atsuko Yamaguchi; Kazuyoshi Torii; Scott Halle; Daniel Moore; Chas Archie
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Metrology and process control: dealing with measurement uncertainty
Author(s): James Potzick
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Spatial signature in local overlay measurements: what CD-SEM can tell us and optical measurements can not
Author(s): Scott Halle; Daniel Moore; Chas Archie; Shoji Hotta; Takumichi Sutani; Akiyuki Sugiyama; Masahiko Ikeno; Atsuko Yamaguchi; Kazuyoshi Torii
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Metrology data cleaning and statistical assessment flow for modeling applications
Author(s): Brian S. Ward; Sylvain Berthiaume; Travis Brist; Peter Brooker
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High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography
Author(s): Daisuke Hibino; Hiroyuki Shindo; Yuichi Abe; Yutaka Hojyo; Germain Fenger; Thuy Do; Ir Kusnadi; John L. Sturtevant; Peter De Bisschop; Jeroen Van de Kerkhove
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OPC model error study through mask and SEM measurement error
Author(s): Mame Kouna Top; David Fuard; Vincent Farys; Patrick Schiavone
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3D-AFM tip to tip variations and impact on measurement performances
Author(s): A.-L. Foucher; J. Foucher; L. Dourthe
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Micro-bridge defects: characterization and root cause analysis
Author(s): Gaetano Santoro; Dieter Van den Heuvel; Jennifer Braggin; Craig Rosslee; Philippe J. Leray; Shaunee Cheng; Christiane Jehoul; Robert Schreutelkamp; Noam Hillel
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Product and tool control using integrated auto macro defect inspection in the photolithography cluster
Author(s): Ted L. Taylor; Paul Shirley; David Dixon; Shoichiro Yanagi; Eri Makimura
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HVM die yield improvement as a function of DRSEM ADC
Author(s): Sonu Maheshwary; Terry Haas; Steve McGarvey
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Minimizing the outgassing of spin-coated organic materials to reduce defects
Author(s): Brandy Carr; April Evers; Marc Weimer; Brian Smith; Jeff Leith
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High-resolution defect metrology for silicon BARC analysis
Author(s): Brian Smith; Steve McGarvey; Zhimin Zhu; Yubao Wang; Dan Sullivan
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Monitoring acidic and basic molecular contamination in leading edge lithography and metrology applications: quantitative comparison of solid state and impinger-based sampling methods
Author(s): Sarah Riddle Vogt; Cristian Landoni
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Method for wafer edge profile extraction using optical images obtained in edge defect inspection process
Author(s): Hiroaki Okamoto; Naoshi Sakaguchi; Fuminori Hayano
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Influence of error distribution shape on process capability analysis
Author(s): Masafumi Asano; Takahiro Ikeda
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Monitoring and control of photoresist properties and CD during photoresist processing
Author(s): Geng Yang; Yit-Sung Ngo; Andi S. Putra; Kar-Tien Ang; Arthur Tay; Zhong-Ping Fang
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Utilizing run-to-run control to improve process capability and reduce waste in lithography: case studies in semiconductor and display manufacturing, and a vision for the future
Author(s): James Moyne
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Improved scanner matching using scanner fleet matcher (SFM)
Author(s): Shian-Huan Cooper Chiu; Chin-Lung Lee; Sheng-Hsiung Yu; Kai-Lin Fu; Min-Hin Tung; Po-Chih Chen; Chao-Tien Huang; Chien-Chun Elsie Yu; Chin-Chou K. Huang; John C. Robinson; David Tien
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Achieving optimum diffraction based overlay performance
Author(s): Philippe Leray; David Laidler; Shaunee Cheng; Martyn Coogans; Andreas Fuchs; Mariya Ponomarenko; Maurits van der Schaar; Peter Vanoppen
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Advanced diffraction-based overlay for double patterning
Author(s): Jie Li; Yongdong Liu; Prasad Dasari; Jiangtao Hu; Nigel Smith; Oleg Kritsun; Catherine Volkman
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In-depth overlay contribution analysis of a poly-layer reticle
Author(s): Frank Laske; J. Whittey; K.-D. Roeth; J. McCormack; D. Adam; J. Bender; C. N. Berglund; M. Takac; Seurien Chou
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The impact of total measurement uncertainty (TMU) on overlay error correction
Author(s): Jangho Shin; Jeongho Yeo; Young-Seog Kang; Woosung Han
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Overlay sampling optimization by operating characteristic curves empirically estimated
Author(s): Kentaro Kasa; Masafumi Asano; Takahiro Ikeda; Manabu Takakuwa; Nobuhiro Komine; Kazutaka Ishigo
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Improvement of the process overlay control for sub-40-nm DRAM
Author(s): Sarohan Park; Eun-Ha Lee; Eun-Kyoung Shin; Yoon-Jung Ryu; Hye-Jin Shin; Seung-Hyun Hwang; Hee-Youl Lim; Kyu-Tae Sun; Tae-Seung Eom; Noh-Jung Kwak; Sung-Ki Park
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Mask registration and wafer overlay
Author(s): Chulseung Lee; Changjin Bang; Myoungsoo Kim; Hyosang Kang; Dohwa Lee; Woonjae Jeong; Ok-Sung Lim; Seunghoon Yoon; Jaekang Jung; Frank Laske; Lidia Parisoli; Klaus-Dieter Roeth; John C. Robinson; Sven Jug; Pavel Izikson; Berta Dinu; Amir Widmann; DongSub Choi
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Overlay control strategy for 45/32nm RD and production ramp up
Author(s): Tuan-Yen Yu; Jun-Hung Lin; Yong-Fa Huang; Chien-Hao Chen; Chun-Chi Yu; Chin-Chou Kevin Huang; Chien-Jen Huang; David Tien
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Development for 2D pattern quantification method on mask and wafer
Author(s): Ryoichi Matsuoka; Hiroaki Mito; Yasutaka Toyoda; Zhigang Wang
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Contour-based self-aligning calibration of OPC models
Author(s): Ir Kusnadi; Thuy Do; Yuri Granik; John L. Sturtevant; Peter De Bisschop; Daisuke Hibino
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From pin-point design based critical dimension metrology toward comprehensive evaluation of IC patterning integrity
Author(s): Chris Sallee; Wayne Clark; Bo Jou Lu; Vladimir Ukraintsev; Vitali Khvatkov
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Application of model-based library approach to photoresist pattern shape measurement in advanced lithography
Author(s): Naoki Yasui; Miki Isawa; Toru Ishimoto; Kohei Sekiguchi; Maki Tanaka; Mayuka Osaki; Chie Shishido; Norio Hasegawa; Shaunee Cheng
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Study on practical application to pattern top resist loss measurement by CD-SEM for high NA immersion lithography
Author(s): Toru Ishimoto; Naoki Yasui; Norio Hasegawa; Maki Tanaka; Shaunee Cheng
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Comparison of different algorithms to determine areas from SEM images
Author(s): K.-P. Johnsen; C. G. Frase; H. Bosse; I. Yonekura; M. Higuchi; J. Richter
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Evaluation of 25-nm pitch SiO[sub]2[/sub]/Si multilayer grating reference using CD-SEM
Author(s): Hiroki Kawada; Yoshinori Nakayama; Jiro Yamamoto
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Improved recipe quality control: from development to mass production
Author(s): Yukari Nakata; Shunsuke Koshihara; Hiroki Kawada; Kyoungmo Yang; Junichi Kakuta; Akemi Kono
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CD-SEM utility with double patterning
Author(s): Benjamin Bunday; Pete Lipscomb; Shunsuke Koshihara; Shigeki Sukegawa; Yasuo Kawai; Yuki Ojima; Andy Self; Lorena Page
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Scatterometry simulator for multicore CPU
Author(s): Hirokimi Shirasaki
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Monitoring of critical dimensions in the sidewall-transferred double-patterning process using scatterometry
Author(s): Keisuke Tanaka; Joungchel Lee
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Mask defect inspection by detecting polarization variations
Author(s): Akira Takada; Masato Shibuya
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A novel defect detection optical system using 199-nm light source for EUVL mask
Author(s): Ryoichi Hirano; Nobutaka Kikuiri; Masatoshi Hirono; Riki Ogawa; Hiroyuki Sigemura; Kenichi Takahara; Hideaki Hashimoto
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Aerial imaging qualification and metrology for source mask optimization
Author(s): Amir Sagiv; Jo Finders; Robert Kazinczi; Andre Engelen; Frank Duray; Ingrid Minnaert-Janssen; Shmoolik Mangan; Dror Kasimov; Ilan Englard
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Advances in the understanding of low molecular weight silicon formation and implications for control by AMC filters
Author(s): Jürgen M. Lobert; Philip W. Cate; David J. Ruede; Joseph R. Wildgoose; Charles M. Miller; John C. Gaudreau
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Mask data rank and printability verification function of mask inspection system
Author(s): Kenichi Takahara; Masakazu Tokita; Hideo Tsuchiya; Masaki Yamabe; Nobutaka Kikuiri; Kinya Usuda
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Fast and precise measurements of the two-dimensional birefringence distribution in microlithographic lens materials
Author(s): Henning T. Katte
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Scanner qualification with IntenCD based reticle error correction
Author(s): Yair Elblinger; Jo Finders; Marcel Demarteau; Onno Wismans; Ingrid Minnaert Janssen; Frank Duray; Michael Ben Yishai; Shmoolik Mangan; Yaron Cohen; Ziv Parizat; Shay Attal; Netanel Polonsky; Ilan Englard
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Resist-based polarization monitoring with phase-shift masks at 1.35 numerical aperture: tool-to-tool comparison
Author(s): Gregory McIntyre; Richard Tu; Christopher Robinson
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Roadmap for traceable calibration of a 5-nm pitch length standard
Author(s): Donald A. Chernoff; David L. Burkhead
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Proximity effects correction for sub-10nm patterning node
Author(s): Piotr Jedrasik; Dai Tsunoda; Masahiro Shoji; Hiroyuki Tsunoe
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Metrology qualification of EUV resists
Author(s): Liraz Gershtein; Ram Peltinov; Stefano Ventola; Claudio Masia; Chanjuan Xing
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Error analysis of absolute testing based on even-odd functions method
Author(s): Xin Jia; Tingwen Xing; Wumei Lin; Zhijie Liao; Yun Li
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Detection of photo resist residue on advanced gate layers using optical scattering and advanced analysis techniques
Author(s): Scott Ku; Ying-Hsueh Chang Chien; C. M. Yang; Elvis Wang; Damian Chen; Chris Young; Kevin Sun; Jack Yan; Prasanna Dighe; Avinash Saldanha; David Feiler
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AMC control in photolithography: the past decade in review
Author(s): Gerald Weineck; Dustin Zastera; Andrew J. Dallas
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CD bias reduction in CD-SEM of very small line patterns: sidewall shape measurement using model-based library matching method
Author(s): Chie Shishido; Maki Tanaka; Mayuka Osaki
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Evaluating SEM performance from the contrast transfer function
Author(s): David C. Joy; Joseph Michael; Brendan Griffin
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CD uniformity correction on 45-nm technology non-volatile memory
Author(s): Ute Buttgereit; Robert Birkner; Mark Joyner; Erez Graitzer; Avi Cohen; Hiroyuki Miyashita; Benedetta Triulzi; Alejandro Fasciszewski Zeballos; Carmelo Romeo
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Overlay breakdown methodology on immersion scanner
Author(s): Auguste Lam; Francois Pasqualini; Jean de Caunes; Maxime Gatefait
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Electrical effects of corner Serif OPC
Author(s): M. McCallum; A. Tsiamis; S. Smith; A. C. Hourd; J. T. M. Stevenson; A. J. Walton
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Fabrication of a new BEAMETR chip for automatic electron beam size measurement
Author(s): S. Babin; K. Bay; S. Cabrini; S. Dhuey; B. Harteneck; M. Machin; C. Peroz
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Application of analytic SEM to CD metrology at nanometer scale
Author(s): Justin J. Hwu; Sergey Babin; Konstantin Bay
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A paradigm shift in scatterometry-based metrology solution addressing the most stringent needs of today as well as future lithography
Author(s): C. M. Ke; Victor Shih; Jacky Huang; L. J. Chen; Willie Wang; G. T. Huang; W. T. Yang; Sophia Wang; C. R. Liang; H. H. Liu; H. J. Lee; L. G. Terng; T. S. Gau; John Lin; Kaustuve Bhattacharyya; Maurits van der Schaar; Noelle Wright; Marc Noot; Mir Shahrjerdy; Vivien Wang; Spencer Lin; Jon Wu; Sophie Peng; Gavin Liu; Wei-Shun Tzeng; Jim Chen; Andreas Fuchs; Omer Adam; Cathy Wang
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Investigation of periodical microstructures using coherent radiation
Author(s): Giedrius Janusas; Arvydas Palevicius; Regita Bendikiene; Paulius Palevicius
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Predictive chrome-film haze mask management for mass production
Author(s): Jeffrey Sim; Tak-Seng Lai; Riza Bual; See Boon Kenneth Tan; Aravinda Krishnappa; Derrick Wu; Xiaosong Zhang; Wooyong Kim; Chit-Wei Lee; Peter Peng
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Results from a novel EUV mask inspection by 193nm DUV system
Author(s): Shmoolik Mangan; Aya Kantor; Nir Shoshani; Asaf Jaffe; Dror Kasimov
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EUV mask: detection studies with Aera2
Author(s): T. Verdene; A. Sagiv; U. Malul; T. Alumot; S. Mangan
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SI-traceable calibration of line-width roughness of 25nm NanoCD standard
Author(s): V. A. Ukraintsev; M. Helvey; Y. Guan; B. P. Mikeska
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