This pdf file contains the Front Matter associated with SPIE Proceedings volume 7521, including Title page, Copyright information, Table of Contents, Conference Committee listing, and Introduction (if any).

Several options are being explored to extend device scaling towards and beyond the 32nm Half Pitch (HP) using the current immersion lithography tools and this in order to compete with the costly EUV technology that is still under development. These extension techniques all involve compromises between design and process. In this paper, several options for the extension beyond the 32nm HP node are investigated and illustrated with experimental results. In a first stage, a litho-friendly design is created, enabling the scalability by lithography. Secondly, aerial image contrast and pitch can be pushed to the ultimate limits by splitting the design into two masks. One mask contains horizontal features and the other one vertical features and both will be printed with extreme off-axis illumination. Double Patterning (DP) is the next step which enables pitch scaling beyond the limits of 1.35NA exposures. The most common double patterning technique used is litho-etch-litho-etch. A splitted design is recombined through two subsequent patterning steps. Self- Aligned Double Patterning is another pitch doubling technique, interesting for one-dimensional designs on narrow pitches. Next to it, alternative, more cost effective DP approaches are discussed. These techniques show the capability of immersion lithography and double patterning to scale beyond the 32nm HP node.

The photolithographic finite-difference time-domain (PFDTD) approach to the modeling of 3D electromagnetic fields and photolithographic structures for projection photolithography in sub-0.2μm and nanometer ranges is developed. It is based on adaptation and application of advanced methods of the Maxwell equations' solution to photolithography problems. The appropriate computational methods and modeling algorithms are created and applied to specific problems. It is shown that sometimes the PFDTD-approach could be preferred over the routine the rigorous coupled-waves analysis (RCWA), especially for the relatively small critical dimensions and in short wavelength range. It allowed us to extent the application domain of our own photolithography software package, and to improve quality and accuracy of topical projection schemes' simulation.

The paper is devoted to the fundamental problems of manufacturing and testing substrates with fine precision for multilayer mirrors which surface shape, as a rule, is an aspherical one and that should be made with a sub-nanometer precision, to characterizing multilayer covers deposited onto these substrates and also to measuring with the subnanometer accuracy the wave-front aberrations of high-aperture optical projective objectives. A particular attention has been given to interferometers with a diffraction reference wave. Last experimental results on aberrations of the reference spherical wave of a source based on a single mode tipped fiber with a sub-wave exit aperture are presented. The application of this interferometer for characterizing aspherical convex optical surfaces and wave-front aberrations of optical systems is illustrated. Resent results on correcting the optical element surfaces are presented. Some peculiarities of the deposition technology as applied to the mirrors with ultra-high precision surface shape are discussed.

New freestanding multilayers consisting of Zr, Mo and silicides have been fabricated and studied as spectral purity filters for the future generation of projection EUV lithography tools with a wavelength of operation 13 nm. The optical properties of multilayers were measured in EUV, visible and IR spectral ranges. Developed filters combine transparency of 70% at λ = 13 nm with high efficiency of suppression of out-of-band radiation (2-3 orders of magnitude from UV to IR regions). The reflectivity of filters at λ = 10.6 μm, where the spectral intensity of background radiation of laser plasma EUV source is at a maximum, achieves 88%. We have tested the withstandability of new multilayer structures to long-term (3 - 7 hours) vacuum heating by CO2-laser radiation at the power, absorbed per area unit of the specimen, of 8 W/cm². The annealed samples were studied by secondary ion mass-spectroscopy and optical measurements were also performed. The most promising structure Zr/ZrSi₂ coated with MoSi₂ layers showed smaller decrease in transparency at λ = 13 nm (from 73% to 68%) than other tested compositions. Freestanding filters of 160 mm in diameter with transparency of 65% at wavelength λ = 13 nm were manufactured for EUV lithography tool.

Within the metal hard-mask (MHM) approach for contact patterning, the SiO₂:TiN and SiO₂:Si₃N₄ etch selectivities have been studied for an Ar-C₄F₈-CO-based discharge in a dual-frequency capacitive coupled plasma (DFC-CCP) chamber, as a function of gas additives and driving 2 MHz power. It is found that the O₂ addition does dramatically decrease the SiO₂:TiN and SiO₂:Si₃N₄ selectivities, while 2MHz power raises the SiO₂:Si₃N₄ but decreases the SiO₂:TiN. The observed selectivity result from a balance between the sputtering by inert ions and the growth of a passivating fluorocarbon film, which thickness and composition depends on the substrate nature. Selectivity is also influenced by species kinetics at the plasma-surface interface.

The impact of different etch plasmas on advanced porous organic low-k material is studied. Several analytical techniques such as Ellipsometric porosimetry (porosity and pore size), Water Contact Angle (hydrophilicity) and FTIR spectroscopy (chemical composition) are used for evaluation. The wafers were exposed in three different chambers (ICP, CCP and μWave) with various gas mixtures. The highest etch rate is obtained in O₂/C_l2 and H₂/N₂ plasma in an inductively coupled plasma (ICP chamber) and the capacitevly coupled plasma (CCP chamber) respectively. Exposure of the low-k films in CCP plasma chamber with C₄F₈ / CH₂F₂ / Ar/N₂ gas mixture can be used for the further damage prevention, because completely seals the pores. The surface of the sealed films remains hydrophobic (WCA=88°). The He/H₂, C₄F₈/CH₂F₂/O₂/Ar/N₂, CF₄/CH₂F₂ gas mixtures in CCP chamber provide partial pore sealing. The measured refractive indices showed no significant change between the damaged and pristine samples, however the plasma exposure in O₂/C_l2 shows a tendency of C=O groups formation which may act as further centers of moisture adsorption.

The study of the direct current (dc) glow discharge plasma parameters and active species kinetics in HBr (p=30-250 Pa, i_d=10-30 mA) was carried out using the 0-dimensional self-consistent steady-state model. The model included the Boltzmann kinetic equation, the balance equations for both neutral and charge particles, plasma conductivity equation and the quasi-neutrality conditions for volume densities of charged particles as well as for their fluxes to the reactor walls. The final set of cross-sections of electron impact processes for HBr molecules was optimized based on the recent literature data. The data on the steady-state electron energy distribution function, electron gas characteristics (mean energy, drift rate and transport coefficients) and volume-averaged densities of plasma active species were obtained as functions of gas pressure and discharge current.

The results of a 345.1 nm line excitation mechanism investigation are presented. A comprehensive analysis of the radiative transition rates for the B⁺ lower energy levels is carried out. The rate constants of the electron impact excitation/de-excitation processes involved are also calculated. These fundamental data are used in a collisional-radiative model that results in the steady-state B⁺ level population. An important feature of the model is taking into account a ladder excitation mechanism through the metastable level 2s2p³P^o by electron impact. This mechanism strongly changes the dependences of the level populations (and line intensities) on the plasma electron temperature. A dependence of the intensity ratio at 345.1 nm and 162.4 nm on the plasma electron temperature is also presented which can be used for plasma diagnostics.

The objective of the paper is to examine recently proposed Dynamic Langmuir probe (DLP) method as a simple and cost-effective tool for in situ monitoring of end-point detection in plasma etch process and to discuss the Langmuir probe application to indicate chamber walls conditions. Experiment was carried out in mixture CF₄ and O₂ during anisotropic plasma etching of blank structures Si₃N₄/SiO₂/Si. To account for possible practical obstacles of end point detection in commercial process experimental conditions were intentionally chosen to be quite severe. Reduced etching area was about 35% of total area; wafer temperature was not controlled; process was not optimized for selectivity; detected interfaces include Si₃N₄/SiO₂. DLP-data was compared with optical emission spectroscopy (OES) measurements. An approach to process drift prevention was shown by performing measurements in reference Ar plasma between etch processes causing wall contamination. Particularly correlation between plasma potential and cumulative time of processing in strongly depositing C4F8 plasma was studied.

Dependences of characteristics of deep silicon etching on various process parameters are investigated. The method of planning multifactorial experiment is applied to a finding of the optimum recipes providing high selectivity to a mask and decrease of ARDE. Results of research are used by manufacturing of real MEMS structures.

Silicon with high concentrations of deep states is considered as a promising material for the fabrication of light emitters in the infrared region. We develop the method in which deep states appear in Si as a result of crystal defect formation during Si growth on the surfaces covered with dense arrays of Ge nanoscale islands. The concentration of dislocations in the grown Si layers reaches an order of 10¹¹ cm^-2 or higher. Such layers can be referred to as nanostructured Si (ns-Si). Light emitting diodes fabricated on the base of the ns-Si produce infrared emission in the wavelength region from about 1.4 to 1.7 μm at room temperature. To study the radiative and nonradiative recombination processes in the ns-Si, we measured the dependence of photoluminescence (PL) on the excitation power density at several temperatures. The model of the band structure and density of states is offered which involves only one type of radiative deep states that are responsible for the PL peak in the region from 1.5 to 1.6 μm. The observed dependences are explained as a result of competition between multiphonon and Auger recombinations of carriers along with their thermal generation.

Feasibilities to increase the radiation resistance of multijunction solar cells in using Bragg reflectors have been shown, and also the solar cell structure optimum parameters and the optical reflector design have been chosen. Spectral characteristics and photocurrent values of single- and multi-junction SCs with and without Bragg reflectors at different Ga(In)As subcell thicknesses have been simulated. The dependencies of the solar cell photocurrent on the minority charge carrier diffusion length in the Ga(In)As subcell base at different subcell thicknesses have been investigated for structures both with and without Bragg reflectors. A good fit of the calculated dependencies to the experimental ones have been obtained. Two designs of Bragg reflectors for multijunction solar cells have been proposed, which allow ensuring in the Ga(In)As subcell base an effective collection of minority charge carriers at the decrease of their diffusion length caused by radiation treatment.

We investigate the effects of population inversion and laser generation in interesting and important quantum well laser structures made from InAs, AlSb, and GaSb. These broken-gap heterostructures, where the InAs conduction band overlaps with the GaSb valence band, are promising for fabrication different devices. We have considered the asymmetrical InAs/GaSb quantum wells sandwiched by the two AlSb wide-gap barrier layers, n-type InAs left contact and p-type GaSb right contact. We found that the population inversion and laser generation can be achieved in the structure under positive external bias. We have obtained the giant values of optical gain for the TM laser modes.

Numerically by the Monte-Carlo wave function (MCWF) method and analytically by the Heisenberg-Langevin method the interaction of three-level atom with quantized electromagnetic field is investigated in the conditions of electromagnetically induced transparency (EIT) conditions. A possibility of noise suppression in atomic system by means of quantum features of squeezed light is examined in detail. The characteristics of atomic system responsible for relaxation processes and noise in EIT are found.

Three methods, namely 2×2 and 4×4 transfer matrix methods as well as scattering matrix method, for simulation of the transmission and reflection spectra of the layered structures are described in this paper. The advantages of each of these methods for simulation of the optical spectra of one-dimensional photonic crystals are analyzed. The modified 2×2 transfer matrix method is suggested for calculation of the reflection and transmission coefficients of the layered structures in situation when the incident light beam has a cone-like shape.

Solutions of the problems of integrated absorption and amplitude-phase dispersion relations for transmission spectra in the range of isolated execution resonances taking into account the interference of exciton-polariton waves based on the application of the causality principle to optical response functions and the limiting transition of these solutions for wide single quantum wells are considered. It is shown that the results obtained are equivalent in the limit to the results of single-wave solution, which considers a wave with the lesat absorption. Generalization to the case of oblique incidence of lights is performed.

The work investigates the influence of the mode and conditions for deposition of a Ti thin film on the specific contact resistance and thermal stability of Ge/Au/Ni/Ti/Au based ohmic contacts to n-GaAs. Deposition techniques of a Ti diffusion barrier were discovered in which a fifty-fold reduction in specific contact resistance was observed, and also an increase in the thermal stability of the surface morphology on the edge of the contact areas. The factors influencing the specific contact resistance are: the angle at which the titanium atoms impact on the GaAs surface, the rate of deposition of the Ti film, and also the residual pressure during deposition. The factor which has an influence on the thermal stability of the morphology of the contact edges appears to be the angle of incidence of the Ti atoms.

It is well known that due to interaction between Cu and Si in the regions of source and drain copper interconnections should not be in direct contact with Si. In this study the barrier properties of Hf-based thin films were investigated. Hafnium nitride films (15nm) and multilayer Hf-Si structures (50 alternate 0,2 nm-Hf and 0,4 nm-Si layers) were prepared by electron beam evaporation. Hf-Si sandwiches were annealed at 700°C and 900°C for 2 min to form silicide. Then 100 nm thick copper layers were deposited on the samples. For the Cu/HfN_x/Si contact system the interfacial reactions between Cu, Hf and Si were observed after annealing at 500°C for 30 min by profile Auger analysis. The HfN_x barrier fails and Cu atoms penetrate into the Si substrate. On the other hand Auger analysis results for Cu/HfSi_x/Si structure showed that there were not diffusion of Cu atoms in barrier layer and Si substrate. Findings demonstrate that hafnium silicide barrier layers can be used to prevent interfacial reactions between copper interconnections and silicon regions of source and drain.

The work investigated the formation processes of Ge/Cu ohmic contacts to n-GaAs with a germanium content of 30-55% in the film. A comparative analysis was undertaken of the influence of the conditions of a first preliminary annealing carried out in situ with the metallization deposition process, on the value of the specific contact resistance obtained after a second annealing carried out ex situ in a nitrogen environment. It was shown that when the first preliminary annealing is carried out in a flow of atomic hydrogen with a flow density of atoms of 10¹³-10¹⁶ at. cm² s^-1 a reduction in specific contact resistance of 2-2.5 times is observed, and also a more homogeneous metallization is formed with a finer microcrystal structure, in comparison with when the first, preliminary annealing is carried out under vacuum. The reduction in specific contact resistance is apparently connected with the action of the hydrogen atoms which minimise the rate of the oxidizing reactions and activate solid phase reactions forming the ohmic contact during the thermal treatment process.

Recently investigations of the technologies using self-organization and phase layering occur more and more frequently. Considerable simplifications of processes, self-alignment of elements and reduction of stage quantity are the reasons of that. In this work we present results of computer simulation and experimental study of CoSi₂/TiO₂/SiO₂/Si gate structure formation technology which uses solid-phase diffusion and phase-layering. The bilayer of TiO₂ and SiO₂ was chosen as gate dielectric because titanium dioxide is possessed of extremely high dielectric permittivity and silicon dioxide has large band gap and high quality interface with Si. Because of its low resistivity CoSi₂ is considered now as one of the most prospective material for metal gate electrodes. The technology which was simulated in this work allows to form such a gate structure during the sole annealing process. To compute the technology parameters the program, which take into account diffusion properties of Co, Ti, Si and O was realized. Also the same structure was formed by rapid thermal oxidation and magnetron sputtering, with following rapid annealing. Simulation and experimental results show that the technology can be used for gate structure formation.

We consider theoretically signal and noise properties of the new type of a high-sensitivity microwave detector, based on a SINIS (Superconductor-Insulator-Normal metal-Insulator-Superconductor) Josephson junction, in which the electron energy distribution function f(ε) in the nanoscale normal metal N region is nonequilibrium due to the capacitive coupling of this region with a receiving antenna. The deviation of f(ε) from the equilibrium leads to a change in the critical current I_c of the junction, i.e., in fact, to its inductance L = Φ₀/2πI_c (Φ₀ ≈ 2.07*10^-15 Wb is the magnetic flux quantum), which is the output signal of this device. Up to now there was no calculation of the noise properties of SINIS Josephson junction bolometer, taking into account non-equilibrium form of electron distribution function f(ε) in the normal metal absorber of this detector. We make this calculations and demonstrate, that noise parameter NEP of this detector is lower, than in others modern microwave detectors.

Investigations of the electronic thermal properties of the interfaces between a normal metal and high-temperature superconductors are important for correct design of modern low-temperature electronic refrigerators and bolometers. Multiband superconductivity, recently discovered in ferropnictides and in magnesium diboride, is the suitable choice due to isotropic order parameter in it, in contrast with strongly anisotropic d-wave superconductivity in high-Tc cuprates, which is destructive for electronic refrigeration and bolometric applications. Moreover, recent calculations of Andreev spectra and subgup bound states in ferropnictides, taking into account coherent multiband interference effects in s± signreversal order parameter model, predict possible suppression of Andreev reflection for clean boundaries between ferropnictides and a normal metal. This Andreev reflection suppression can improve electronic refrigerator quality. Up to now there was no calculation of electronic thermal properties of the interfaces between a normal metal and novel multiband superconductors. In this paper we calculate the thermal flux and electronic thermal conductivity of the boundary between normal metal and novel multiband superconductors. In this calculations both s₊₊ and s_± sign-reversal order parameter models for multiband superconductor is used, taking into account coherent multiband interference effect.

We show that conductivity measurements on sandwiches of a polymer between normal-metal and superconducting-metal electrodes can be interpreted in terms of intrinsic superconductivity due to injection of charge into the polymer.

High-temperature magnetic effects observed in the conventional 'low-frequency' magnetization measurements and Mössbauer spectra of nanoparticles are discussed in the framework of a general model for magnetic dynamics of ensemble of single-domain particles in which the uniform magnetization precession orbits are considered as stochastic states. Qualitative analysis and numerical calculations within the 'multilevel' model evidence for the existence of the asymptotic high-temperature behavior of the magnetization of an ensemble of particles in a weak magnetic field, which is earlier predicted to be different from the classical Langevin limit for ideal superparamagnetic particles. Based on this approach, a simplified three-level stochastic model is developed in order to describe the Mössbauer absorption spectra of an ensemble of magnetic nanoparticles in a weak magnetic field. In particular, this model predicts the appearance of ⁵⁷Fe magnetic sextets with a small hyperfine splitting in a weak magnetic field and at high temperature, which look like effective "doublets" of lines often observed in experimental spectra.

The interest to nanomagnetic substances is caused by their abundance in natural materials and by their application in different fields of technology particularly the use of magnetic anisotropy is of interest for the microelectromechanical systems obtained by filling microcapillaries with magnetic fluids composed of nanoparticles. Nanoscale particles differ from massive particles by their magnetic properties. The bulk of "surface area" is comparable with the bulk of a whole particle it is the distinguishing feature of nanoparticles. At the same time magnetic properties of "surface area" can greatly differ from "internal area" properties and their contribution to the whole magnetic properties of the particle should be viewed separately. Massive and nanodispersed powders of maghemite (γ-Fe₂0₃ magnetic oxide) and the similar powders of magnetite (Fe₃O₄ magnetic oxide) and magnetic fluid on the base of nanodispersed magnetite have been studied by means of Mossbauer spectroscopy. The average size and composition of nanoparticles were evaluated. The distribution functions of effective magnetic fields on the nuclei were obtained and on their basis the magnetic properties of "surface" and "internal" areas were analyzed.

The magnetic and thermal properties of the nanocomposite compound GdNiO₃ was investigated in temperature interval from room temperature to 0.5 K and magnetic fields up to 14 T. Anomalies of static, dynamic magnetization and specific heat were detected at 0.7, 13, and 1.6 K, respectively. Detected anomalies are associated with magnetic phase transitions.

In this study the results of electron mobility and drift velocity calculation in GaAs-in-Al₂O₃ quantum nanowires, resistance and conductivity of single-wall armchair carbon nanotubes as well as electric current in the nanotubes are presented.

The relation between molecular energy spectra and transport characteristics properties of monomolecular singleelectron tunneling transistor based on this molecule were investigated. In order to approach it we first calculated single-electron molecular energy spectra of small molecules of carborane C₂B₁₀H₁₂, fullerene C₆₀ and platinum molecular cluster Pt₅(CO)₆(PPh₃)₄ for their different ground and excited charge energy states. Effective capacitance parameters and transport spectrum of single-electron states of each of the molecules were established and the concept of molecular transport spectra was introduced. Using Monte Carlo simulation method we calculated transport characteristics of monomolecular single-electron transistor and gave a brief comparison with available experimental data.

In this paper we have investigated the possibility of determining single-electron spectrum of the nano-object, that is used as the central island of a single-electron transistor. The method for the charge spectra and singleparticle transport spectra determination on the basis of the experimental stability diagram was suggested. It was shown, that to calculate the total energy spectrum of a molecular nano-object for various charging and excitation states and a single-particle spectrum, one needs to measure the blockade diamonds of the stability diagram. To identify the electron energy relaxation type in the molecular nano-object it is necessary to measure the stability diagram of the molecular single-electron transistor up to the first non-blockade diamond. In addition, a method of calculation of tunneling rates via single-particle energy levels of the molecular object has been suggested. Calculation of energy spectrum for various charging and excitation states has been carried out, on the basis of experimental data.

We have investigated in detail the contributions of different symmetry breaking mechanisms into the electron optical spin polarization in asymmetrical quantum wells made from zinc-blende materials such as the AlSb/InAs/GaSb/AlSb broken-gap quantum wells which can be used as an active region of very promising mid-infrared semiconductor laser. The considered structure is grown on GaSb along the [001] direction and contains also the p-type contacts to the left and to the right side of the structure. We have found that the maximum value of the initial electron optical spin polarization can be about 40 % if the angle between the vector n^→ along the direction of light propagation and the growth direction is π/10.

Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiN_x:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

In this research the process of formation carbonic nanostructures using low temperatures was studied. Nanostructures were formed using PECVD and glow-discharge plasma. The research was carried out at temperature range between 300°C - 700°C. The influence of Ni catalyst thickness and concentration of carbon-containing component in vapour phase on the structure of carbonic deposit was studied. Consequently we attained productive growth of both the homogeneous vertical nanotubes and graphene flakes array at low temperature (350°C). Electrophysical features of obtained structures were examined.

In this work has been developed the modification of PECCVD method and technology that allows to grow carbon nanostructures of different shape. Also the method for carbon nanostructures' catalytic growth from carbonaceous substrate (CGCS) has been researched and developed. The results of comparative investigations of carbon nanostructures' arrays grown as from gas phase so directly from carbonaceous substrates are presented in the article. Physical model which explains the form of nanostructures grown from carbonaceous substrates is offered. Also the field emission characteristics of mediums based on these nanostructures are studied.

Blank-chips for molecular transistor were created using milling technology with focused ion beam. Optimal parameters for milling of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with suspended electrodes. Electrical measurements of a gap show reliable cutting of a metal film. In situ production of simple nanostructures of various shapes potentially useful for quantum devices was demonstrated.

New method of Si wires synthesis by magnetron sputtering of solid target as a Si source is described. This method is simple, safe and cheaper in comparison with Chemical Vapor Deposition (CVD). Influence of silicon atom flow rates (target sputtering rate) and substrate temperature on the growth of different Si structures were studied. It was found that Si wires have different morphology, which depends on the Si flux and substrate temperature.

In this work we obtained the gaps less than 5 nm wide in the thin (15 nm) gold films. These gaps can be used for the creation of the room-temperature single-electron transistor. We demonstrated the need of deposition of Au without an adhesive layer and elaborated the technique of the creation of thin (15 nm) and narrow (200 nm) gold electrodes on Al₂O₃. It provides a sufficient adhesion of Au film even without a buffer layer and subsequent successive gap implementation.

We have developed the technique of the surface's roughness decrease of gold films to atomic level. This technique consists of the accurate annealing of fresh-evaporated gold films by hot plate at temperature 250°C (or by free flame of gas-jet (T~700°C)). Films were evaporated thermally on atomically smooth mica substrates. The annealing of the gold film was carried out just after evaporation. The atomically smooth surface of gold film was obtained. The atomically smooth (roughness ~ 0.2 nm) regions have a sizes of 50-100 nm. It was found that the time from the end of evaporation process to the beginning of annealing process should be not more than 10 hours as well as a delay of the implementation of self-assembly process with annealed films and the analysis of results should be not more than 2 days. There was developed the method of gold nano-particles binding on the prepared by such way gold films. Evaporated and annealed gold film was treated by dithiol solution (1,2-ethanedithiol or 1,4-butanedithiol) with concentration of 0.05 g/mg and after that the samples were treated by the solution of gold nano-particles (2*10^-3 — 2.5*10^-5 mol/l). We have sorted out the optimal concentrations of gold nano-particles in various solvents, temperature and process duration which exclude the nano-particles' conglomeration and guarantee the uniform distribution of nanoparticles on film surface. The absence of nano-particles' conglutination was confirmed by the examination of samples with Scanning Tunneling Microscope and Scanning Electron Microscope. These examinations demonstrate the uniform distribution of small (3-13 nm) nano-particles on gold surface with the density of about 3 particles per 1000 nm².

In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.

A theoretical analysis of the experimental scheme geometry for the anomalous Kossel effect observation is performed. Fluorescence radiation from germanium is induced by characteristic MoK_α radiation incident on the crystal at a small angle close to the specular reflection angle. First experimental results on observation of anomalous Kossel lines from the germanium crystal are presented.

The new method of measurement of linear sizes of nanorelief elements is presented. The applicability of this method to linear measurements of nanorelief elements with trapezoid profile and wide and small inclination angles of side walls is demonstrated. The results of developed method and direct measurements are compared. Examples of measurements of linear sizes of relief pitch structures are given.

The theory of electromigration-induced nano- and microprocesses that terminate in failure of thin-film conductors is given. These processes determine operational reliability of IC metallization system. The physical foundations of degradation and lifetime of interconnects are analyzed. The various mechanisms of their deformations and failures that are of practical importance for different types of multilevel arrangement and microstructure are studied. The full 3D theory developed considers the electromigration failures as a set of processes occurring at the nano-, micro- and mesoscale. We reduced the general equations in order to describe specific conducting systems, developed the methods of their numerical modeling, and created software packages. It allows carrying out the simulation of electromigration failures and performing the lifetime analysis for various interconnect systems that are of prime practical significance as regards the operation of IC metallization, the modeling being over a wide range of material, geometrical, structural, and operational parameters. Some examples of the reliability analysis and of the analysis of the most likely failure locations in dependence on the current density, parameters of multilevel metallization, temperature, and polycrystalline grain microstructure of interconnects are represented. We also put forward an approach to modeling the electromigration in conductors containing impurities.

In this article we will summarize most of important parameters for cache memory optimization which can be used in embedded systems. The main point for optimization is that data in cache will be read continuously. It is leave a mark on optimization parameters like work algorithm for cache level 1 and level 2, pipeline in cache, tiny cache, cache size, set-associativity and so on.

Possible approaches to improvement of quality of a high-speed planar transmission line are investigated by systematic study of superconductor high-Q microstrip resonators in the frequency range of order 10 GHz. Superconductor microstrip resonators with maximal highest quality-factors Q>10⁵ were constructed. Relative contributions of spectral (geometrical and non-dissipative material properties), on one hand, and of dissipative (losses in materials) characteristics, on another hand, into the limitation of maximal achievable values of the quality of microstrip resonators are investigated. It is shown that the highest by now Q≥10⁵ are limited dominantly by the spectral properties of microstrip resonators.

The work is devoted to atomistic-scale modeling of chemical vapor deposition (CVD) of silicon nitride thin films from dichlorosilane (DCS) and ammonia (NH3). Within the framework of extended chemical mechanism that essentially extends the chemical reactions scheme developed earlier to include DCS catalytic decomposition reactions, selfconsistent model of CVD at atomistic scale has been elaborated. The extended chemical mechanism has been built up and studied by means of ab initio quantum chemistry methods. It allowed us to describe adequately the gas phase kinetic processes over a typical range of temperature, pressure and DCS: NH3 ratio. The effective kinetic model has been developed for the extended set of possible reactions. It enabled us to calculate the reaction rates and concentrations of gas mixture components as well as to carry out sensitivity analysis of kinetic equations. The surface mechanism of film growth for the extended reactions scheme has been investigated with the use of non-empirical methods based on the cluster model. Reactions of additional gas mixture components with active surface centers were calculated by quantum chemistry methods, and thermodynamic analysis of surface coverage by various chemisorbed groups has been performed.

Thermodynamical models allowing to find the surface tension and the separation work of the interfaces of joined materials as functions of lattice defect concentrations in the materials are developed. The models are applied to the cases when the defects are vacancies, vacancy clusters, and impurity atoms. As a result it is obtained that at certain defect concentrations the interfacial surface tension and separation work can be made vanish and become negative.

On the basis of the general thermodynamic approach developed in a model describing the influence of point defects on the separation work at an interface of solid materials is developed. The kinetic equations describing the defect exchange between the interface and the material bulks are formulated. The model have been applied to the case when joined materials contain such point defects as impurity atoms (interstitial and substitutional), concretized the main characteristic parameters required for a numerical modeling as well as clarified their domains of variability. The results of the numerical modeling concerning the dependences on impurity concentrations and the temperature dependences are obtained and analyzed. Particularly, the effects of interfacial strengthening and adhesion incompatibility predicted analytically for the case of impurity atoms are verified and analyzed.

In this paper analysis of dopant redistribution during formation of p-n-junction in semiconductor heterostructure by laser or microwave annealing has been done. It has been shown, that inhomogeneity of the heterostructure after annealing with appropriate duration leads to simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area. Inhomogeneity of temperature distribution leads to simultaneously increasing of both effects. Some conditions on properties of doped heterostructure and annealing time for simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area are formulated.

The system NANODEV consists of three subsystems: SET-NANODEV for simulation of single-electron structures, RTS-NANODEV for simulation of resonant-tunneling structures, and QW-NANODEV for simulation of quantum wire devices. The new models of nanoelectronic devices on single-electron tunneling, resonant-tunneling effects have been included in the NANODEV system. In this paper we described results for RTD's based on GaAs/AlAs and InAs/AlSb/GaSb/AlSb/InAs which were obtained with the use of proposed two-band models of wave function formalism. It was shown that it is necessary to take into account many of factors for adequate simulation of these devices. Accounting of more complex band structure of investigated material systems on the basis of multiband models is one of the most important factor. Adequacy of the models is proved by comparison with experimental data. Physical models of single-electron devices with spatial quantization on islands were also proposed. It was shown that effect is important on IV-characteristics of devices not only for small islands but with increasing of number of islands, applied voltages and decreasing of temperature. The physical models allow to calculate single-electron transistor IVcharacteristics depending on the structure sizes and parameters of materials. A good agreement of the results with the experimental data was obtained too.

Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.

Simulation results for three different neutralization channel designs of a fast neutral beam (FNB) source are presented and discussed. The influence of channel geometry on the FNB generation efficiency is studied. A direct channel design characterizing by technological simplicity has a low ions-to-neutrals conversion coefficient. For an inclined channel design a strong effect of the ions and fast neutrals angle separation is found. With angle restricting the output beam, this effect provides increasing the neutrality degree due to eliminating most of ions from the output beam. The results obtained for a design with addition reflecting surfaces predict a high efficiency of the proposed channel due to a focusing effect providing a high particle density in the beams overlap area.

Entry level MOSFET and TFT models use channel-length modulation parameter λ to account for differential conductance after saturation. This is done by multiplying the expression for the drain current but the 1+λV_DS factor, where V_DS is the drain-to-source bias. However, this traditional approach suffers from non-monotonic behavior of the differential conductance with increasing drain-to-source bias. In the improved model, we offer a new approach that gives the correct monotonic decrease of the differential conductance. This improved model uses the standard set of MOSFET compact model parameters making it compatible with existing CAD tools.