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PROCEEDINGS VOLUME 7272

Metrology, Inspection, and Process Control for Microlithography XXIII
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Volume Details

Volume Number: 7272
Date Published: 14 April 2009

Table of Contents
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Front Matter: Volume 7272
Author(s): Proceedings of SPIE
Improving optical measurement accuracy using multi-technique nested uncertainties
Author(s): R. M. Silver; N. F. Zhang; B. M. Barnes; H. Zhou; A. Heckert; R. Dixson; T. A. Germer; B. Bunday
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The measurement uncertainty challenge of advanced patterning development
Author(s): Narender Rana; Chas Archie; Wei Lu; Bill Banke
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CD-SEM parameter influence on image resolution and measurement accuracy
Author(s): Benjamin Bunday; Uwe Kramer
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Role of CDAFM in achieving accurate OPC modeling
Author(s): Vladimir A. Ukraintsev
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Sampling for advanced overlay process control
Author(s): Cindy Kato; Hiroyuki Kurita; Pavel Izikson; John C. Robinson
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Simultaneous overlay and CD measurement for double patterning: scatterometry and RCWA approach
Author(s): Jie Li; Zhuan Liu; Silvio Rabello; Prasad Dasari; Oleg Kritsun; Catherine Volkman; Jungchul Park; Lovejeet Singh
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Reference metrology in a research fab: the NIST clean calibrations thrust
Author(s): Ronald Dixson; Joe Fu; Ndubuisi Orji; Thomas Renegar; Alan Zheng; Theodore Vorburger; Al Hilton; Marc Cangemi; Lei Chen; Mike Hernandez; Russell Hajdaj; Michael Bishop; Aaron Cordes
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Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography
Author(s): Chih-Ming Ke; Jimmy Hu; Willie Wang; Jacky Huang; H. L. Chung; C. R. Liang; Victor Shih; H. H. Liu; H. J. Lee; John Lin; Y. D. Fan; Kaustuve Bhattacharyya; Maurits van der Schaar; Noelle Wright; Kiwi Yuan; Vivien Wang; Cathy Wang; Spencer Lin; Mir Shahrjerdy; Andreas Fuchs; Karel van der Mast
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MOSAIC: a new wavefront metrology
Author(s): Christopher N. Anderson; Patrick P. Naulleau
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Immersion specific error contribution to overlay control
Author(s): Koen D'havé; David Laidler; Shaunee Cheng
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Overlay similarity: a new overlay index for metrology tool and scanner overlay fingerprint methodology
Author(s): Chih-Ming Ke; Ching-Pin Kao; Yu-Hsi Wang; Jimmy Hu; Chen-Yu Chang; Ya-Jung Tsai; Anthony Yen; Burn J. Lin
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Tabletop coherent diffractive microscopy with extreme ultraviolet light from high harmonic generation
Author(s): Daisy A. Raymondson; Richard L. Sandberg; William F. Schlotter; Kevin S. Raines; Chan La-o-Vorakiat; Ethan Townsend; Anne Sakdinawat; Ariel Paul; Jianwei Miao; Margaret M. Murnane; Henry C. Kapteyn
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Overlay metrology for double patterning processes
Author(s): Philippe Leray; Shaunee Cheng; David Laidler; Daniel Kandel; Mike Adel; Berta Dinu; Marco Polli; Mauro Vasconi; Bartlomiej Salski
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Implementation of the high order overlay control for mass production of 40nm node logic devices
Author(s): Daisuke Umeda; Mami Miyasaka; Takayuki Uchiyama
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Using intrafield high-order correction to achieve overlay requirement beyond sub-40nm node
Author(s): Chun Yen Huang; Chuei Fu Chue; An-Hsiung Liu; Wen Bin Wu; Chiang Lin Shih; Tsann-Bim Chiou; Juno Lee; Owen Chen; Alek Chen
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Polar Correction: new overlay control method for higher-order intra-field error dependent on the wafer coordinates
Author(s): Manabu Takakuwa; Keigo Toriumi; Nobuhiro Komine; Kazutaka Ishigo; Takuya Kono; Tetsuro Nakasugi; Tatsuhiko Higashiki
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Effects of plasma spatial profile on conversion efficiency of laser produced plasma sources for EUV lithography
Author(s): A. Hassanein; V. Sizyuk; T. Sizyuk; S. Harilal
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Dark-field optical scatterometry for line-width-roughness metrology
Author(s): G. Vera Zhuang; Steven Spielman; John Fielden; Daniel C Wack; Leonid Poslavsky; Benjamin D. Bunday
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A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions
Author(s): E. Pargon; M. Martin; K. Menguelti; L. Azarnouche; J. Foucher; O. Joubert
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SEM metrology damage in polysilicon line and its impact on LWR evaluation
Author(s): S.-B. Wang; W.-Y. Lee; Y. H. Chiu; H. J. Tao; Y. J. Mii
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Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping LER and defect density on production wafers
Author(s): Saar Shabtay; Yuval Blumberg; Shimon Levi; Gadi Greenberg; Daniel Harel; Amiad Conley; Doron Meshulach; Kobi Kan; Ido Dolev; Surender Kumar; Kalia Mendel; Kaori Goto; Naoaki Yamaguchi; Yasuhiro Iriuchijima; Shinichi Nakamura; Shirou Nagaoka; Toshiyuki Sekito
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Validation of CD-SEM etching residue evaluation technique for MuGFET structures
Author(s): Miki Isawa; Maki Tanaka; Tatsuya Maeda; Kenji Watanabe; Tom Vandeweyer; Nadine Collaert; Rita Rooyackers
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Sensitivity of SEM width measurements to model assumptions
Author(s): J. S. Villarrubia; Z. J. Ding
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Accurate electrical prediction of memory array through SEM-based edge-contour extraction using SPICE simulation
Author(s): Eitan Shauly; Israel Rotstein; Ram Peltinov; Sergei Latinski; Ofer Adan; Shimon Levi; Ovadya Menadeva
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Developing an uncertainty analysis for optical scatterometry
Author(s): Thomas A. Germer; Heather J. Patrick; Richard M. Silver; Benjamin Bunday
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Effect of line-width roughness on optical scatterometry measurements
Author(s): Brent C. Bergner; Thomas A. Germer; Thomas J. Suleski
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Product-driven material characterization for improved scatterometry time-to-solution
Author(s): Alok Vaid; Carsten Hartig; Matthew Sendelbach; Cornel Bozdog; Hyang Kyun Kim; Michael Sendler; Yoel Cohen; Victor Kucherov; Boaz Brill; Stanislav Stepanov
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Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls
Author(s): T. Wiltshire; D. Corliss; T. Brunner; C. Ausschnitt; R. Young; R. Nielson; E. Hwang; J. Iannucci Jr.
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Methodologies for evaluating CD-matching of CD-SEM
Author(s): Hiroki Kawada; Chih-Ming Ke; Ya-Chun Cheng; Yu-Hsi Wang
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Calibration of a scanning electron microscope in the wide range of magnifications for the microscope operation in the integrated circuit production line
Author(s): V. P. Gavrilenko; Yu. A. Novikov; A. V. Rakov; P. A. Todua; Ch. P. Volk
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CD-SEM tool stability and tool-to-tool matching management using image sharpness monitor
Author(s): Hideaki Abe; Yasuhiko Ishibashi; Yuichiro Yamazaki; Akemi Kono; Tatsuya Maeda; Akihiro Miura; Shunsuke Koshihara; Daisuke Hibino
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Performance verification of resist loss measurement method using top-view CD-SEM images for hyper-NA lithography
Author(s): Mayuka Osaki; Maki Tanaka; Chie Shishido; Shaunee Cheng; David Laidler; Monique Ercken; Efrain Altamirano
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Diffraction-based overlay metrology for double patterning technologies
Author(s): Prasad Dasari; Rahul Korlahalli; Jie Li; Nigel Smith; Oleg Kritsun; Cathy Volkman
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Through-focus scanning and scatterfield optical methods for advanced overlay target analysis
Author(s): Ravikiran Attota; Michael Stocker; Richard Silver; Alan Heckert; Hui Zhou; Richard Kasica; Lei Chen; Ronald Dixson; George Orji; Bryan Barnes; Peter Lipscomb
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Cr migration on 193nm binary photomasks
Author(s): John Bruley; Geoffrey Burr; Robert E. Davis; Philip Flaitz; William D. Hinsberg; Frances A. Houle; Dolores C. Miller; Michael Pike; Jed Rankin; Alfred Wagner; Andrew Watts
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Compute resource management and TAT control in mask data prep
Author(s): Ahmed Nouh; Kenneth Jantzen; Minyoung Park; Hien T. Vu
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Investigation of phase distribution using Phame in-die phase measurements
Author(s): Ute Buttgereit; Sascha Perlitz
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Image library approach to evaluating parametric uncertainty in metrology of isolated feature width
Author(s): James Potzick
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New inspection technology for hole pattern by Fourier space on hp 4x-nm generation
Author(s): Akitoshi Kawai; Fuminori Hayano; Kazumasa Endo; Kiminori Yoshino; Yuichiro Yamazaki
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Development of optical simulation tool for defect inspection
Author(s): Takayoshi Fujii; Yusaku Konno; Naotada Okada; Kiminori Yoshino; Yuuichiro Yamazaki
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Phenomenology of electron-beam-induced photoresist shrinkage trends
Author(s): Benjamin Bunday; Aaron Cordes; John Allgair; Vasiliki Tileli; Yohanan Avitan; Ram Peltinov; Maayan Bar-zvi; Ofer Adan; Eric Cottrell; Sean Hand
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Systematic defect filtering and data analysis methodology for design based metrology
Author(s): Hyunjo Yang; Jungchan Kim; Taehyeong Lee; Areum Jung; Gyun Yoo; Donggyu Yim; Sungki Park; Toshiaki Hasebe; Masahiro Yamamoto; Jun Cai
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Quantitative measurement of voltage contrast in SEM images for in-line resistance inspection of wafers manufactured for SRAM
Author(s): Miyako Matsui; Takahiro Odaka; Hiroshi Nagaishi; Koichi Sakurai
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Study of devices leakage of 45nm node with different SRAM layouts using an advanced e-beam inspection systems
Author(s): Hong Xiao; Long Ma; Yan Zhao; Jack Jau
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Hotspot monitoring system with contour-based metrology
Author(s): A. Kawamoto; Y. Tanaka; S. Tsuda; K. Shibayama; S. Furukawa; H. Abe; T. Mitsui; Y. Yamazaki
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Outliers detection by fuzzy classification method for model building
Author(s): Mame Kouna Top; Yorick Trouiller; Vincent Farys; David Fuard; Emek Yesilada; Catherine Martinelli; Mazen Said; Franck Foussadier; Patrick Schiavone
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Monitoring measurement tools: new methods for driving continuous improvements in fleet measurement uncertainty
Author(s): Eric Solecky; Chas Archie; Matthew Sendelbach; Ron Fiege; Mary Zaitz; Dmitriy Shneyder; Carlos Strocchia-rivera; Andres Munoz; Srinivasan Rangarajan; William Muth; Andrew Brendler; Bill Banke; Bernd Schulz; Carsten Hartig; Jon-Tobias Hoeft; Alok Vaid; Mark Kelling; Benjamin Bunday; John Allgair
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Two-dimensional dose and focus-error measurement technology for exposure tool management in half-pitch 3x generation
Author(s): Kazuhiko Fukazawa; Yuji Kudo; Yoshihiko Fujimori; Kiminori Yoshino; Yuichiro Yamazaki
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Increased uniformity control in a 45nm polysilicon gate etch process
Author(s): Blake Parkinson; Dan Prager; Merritt Funk; Radha Sundararajan; Asao Yamashita; Kenneth Bandy; Eric Meyette
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The measurement uncertainty challenge for the future technological nodes production and development
Author(s): J. Foucher; P. Faurie; A.-L. Foucher; M. Cordeau; V. Farys
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Angle-resolved scatterfield microscope for linewidth measurement
Author(s): Deh-Ming Shyu; Yi-sha Ku; Wei-Te Hsu
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Optical CD metrology model evaluation and refining for manufacturing
Author(s): S.-B. Wang; C. L. Huang; Y. H. Chiu; H. J. Tao; Y. J. Mii
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Uncertainty and sensitivity analysis and its applications in OCD measurements
Author(s): Pedro Vagos; Jiangtao Hu; Zhuan Liu; Silvio Rabello
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AFM method for sidewall measurement through CNT probe deformation correction and its accuracy evaluation
Author(s): Masahiro Watanabe; Shuichi Baba; Toshihiko Nakata; Hiroshi Itoh; Takafumi Morimoto; Satoshi Sekino
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Alignment method of self-aligned double patterning process
Author(s): Meng-Feng Tsai; Jun-Cheng Lai; Yi-Shiang Chang; Chia-Chi Lin
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Application results of lot-to-lot high-order overlay correction for sub-60-nm memory device fabrication
Author(s): Jangho Shin; Sangmo Nam; Taekyu Kim; Yong-Kug Bae; Junghyeon Lee
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Fast mask CD uniformity measurement using zero order diffraction from memory array pattern
Author(s): Jinseok Heo; Jinhong Park; Jeongho Yeo; Seongwoon Choi; Woosung Han
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Requirements of the inspection for double patterning technology reticles
Author(s): Wonil Cho; Won-Sun Kim; Sung-Joon Sohn; Sunpyo Lee; Jihyeon Choi; Yonghoon Kim; HanKu Cho
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Sensitivity improvement and noise reduction of array CD mapping on memory device using inspection tool
Author(s): Jeong-Ho Yeo; Byeong-Ok Cho; Jin-Hong Park; Jinseok Hur; Seok-Hoon Woo; Seungwoon Choi; Chan-Hoon Park
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Analysis of systematic errors in lateral shearing interferometry for EUV optical testing
Author(s): Ryan Miyakawa; Patrick Naulleau; Ken Goldberg
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Haze generation model and prevention techniques for sulfate free cleaned mask
Author(s): Manish Patil; Jong-Min Kim; Ik-Boum Hur; Sang-Soo Choi
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Resist-based polarization monitoring with phase-shift masks at 1.35 numerical aperture
Author(s): Gregory McIntyre; Richard Tu
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An investigation of perfluoroalkylamine contamination control
Author(s): Andrew J. Dallas; Dustin Zastera
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Sub-nanometer broadband measurement of elastic displacements in optical metrology frames and other critical elements
Author(s): Grace Kessenich; Shweta Bhola; Baruch Pletner; Wesley Horth; Anette Hosoi
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Measurement of low molecular weight silicon AMC to protect UV optics in photo-lithography environments
Author(s): Jürgen M. Lobert; Charles M. Miller; Anatoly Grayfer; Anne M. Tivin
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Positive identification of lithographic photoresists using real-time index of refraction monitoring for reduced cost of ownership
Author(s): Ron Jee; Susanne Pepper; David Stedman
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Sub-50-nm pitch size grating reference for CD-SEM magnification calibration
Author(s): Yoshinori Nakayama; Jiro Yamamoto; Hiroki Kawada
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Effective purging solution to reticle haze formation
Author(s): Wei-Jui Tseng; Shean-Hwan Chiou; Ming-Chien Chiu; Po-Shin Lee
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Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscope
Author(s): V. P. Gavrilenko; V. A. Kalnov; Yu. A. Novikov; A. A. Orlikovsky; A. V. Rakov; P. A. Todua; K. A. Valiev; E. N. Zhikharev
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Aerial imaging for FABs: productivity and yield aspects
Author(s): Ilan Englard; Yaron Cohen; Yair Elblinger; Shay Attal; Neil Berns; Lior Shoval; Michael Ben-Yishai; Shmoolik Mangan
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Improved mask-based CD uniformity for gridded-design-rule lithography
Author(s): Lev Faivishevsky; Sergey Khristo; Amir Sagiv; Shmoolik Mangan
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Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication
Author(s): Ryoichi Hirano; Masatoshi Hirono; Riki Ogawa; Nobutaka Kikuiri; Kenichi Takahara; Hideaki Hashimoto; Hiroyuki Shigemura
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Novel lithography approach using feed-forward mask-based wafer CDU correction increase fab productivity and yield
Author(s): Shmoolik Mangan; Erik Byers; Dan Rost; Mike Garrett; Merri Carlson; Craig Hickman; Jo Finders; Paul Luehrmann; Robert Kazinczi; Ingrid Minnaert-Janssen; Frank Duray; Baukje Wisse; Nicole Schoumans; Liesbeth Reijnen; Thomas Theeuwes; Michael Ben-Yishai; Rachel Ren; Ryan Gibson; Lior Shoval; Yaron Cohen; Yair Elblinger; Ilan Englard
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CD-bias reduction in CD-SEM line-width measurement for the 32-nm node and beyond using the model-based library method
Author(s): Chie Shishido; Maki Tanaka; Mayuka Osaki
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New approach for mask-wafer measurement by design-based metrology integration system
Author(s): Tatsuya Maeda; Katsuya Hayano; Satoshi Kawashima; Hiroshi Mohri; Hideo Sakai; Hiodetoshi Sato; Ryoichi Matsuoka; Makoto Nishihara; Shigeki Sukegawa
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A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography
Author(s): T. Ishimoto; K. Sekiguchi; N. Hasegawa; K. Watanabe; D. Laidler; S. Cheng
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Improving capability of recipe management on CD-SEM using recipe diagnostic tool
Author(s): Kaoru Nishiuchi; Shinichi Nakano; Masaki Nishino; Kyoungmo Yang; Junichi Kakuta; Yukari Nakata; Shunsuke Koshihara
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Three-dimensional profile extraction from CD-SEM top-view image
Author(s): Atsuko Yamaguchi; Yoshinori Momonoi; Ken Murayama; Hiroki Kawada; Junichi Tanaka
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3D-AFM booster for mass-production nanoimprint lithography
Author(s): A.-L. Foucher; J. Foucher; S. Landis
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Simulation of secondary electron emission in helium ion microscope for overcut and undercut line-edge patterns
Author(s): Takuya Yamanaka; Kensuke Inai; Kaoru Ohya; Tohru Ishitani
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Nonplanar high-k dielectric thickness measurements using CD-SAXS
Author(s): Chengqing Wang; Kwang-Woo Choi; Yi-Ching Chen; Jimmy Price; Derek L. Ho; Ronald L. Jones; Christopher Soles; Erik K. Lin; Wen-Li Wu; Benjamin D. Bunday
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High-precision CD matching monitoring technology using profile gradient method for the 32-nm technology generation
Author(s): Toru Ikegami; Akemi Kono; Tatsuya Maeda; Mayuka Osaki; Chie Shishido
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CD budget analysis on sub-50-nm DRAM device: global CD variation to local CD variation
Author(s): Chan Hwang; Joon-Soo Park; Jeongho Yeo; Seong-Woon Choi; Chan-Hoon Park
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Intrafield process control for 45 nm CMOS logic patterning
Author(s): Bertrand Le Gratiet; Jean Massin; Alain Ostrovski; Cedric Monget; Marianne Decaux; Nicolas Thivolle; Romuald Faure; Fabrice Baron; Jean-Damien Chapon; Karen Dabertrand; Frank Sundermann; Pascal Gouraud; Laurène Babaud; Lionel Thevenon; Nicolas Cluet; Boris VandeWalle
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Contour quality assessment for OPC model calibration
Author(s): Paul Filitchkin; Thuy Do; Ir Kusnadi; John L. Sturtevant; Peter de Bisschop; Jeroen Van de Kerkhove
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Applications of AFM in semiconductor R&D and manufacturing at 45 nm technology node and beyond
Author(s): Moon-Keun Lee; Minjung Shin; Tianming Bao; Chul-Gi Song; Dean Dawson; Dong-Chul Ihm; Vladimir Ukraintsev
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WLCD: a new system for wafer level CD metrology on photomasks
Author(s): Sven Martin; Holger Seitz; Wolfgang Degel; Ute Buttgereit; Thomas Scherübl
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3D touch trigger probe based on fiber Bragg gratings
Author(s): Bangzhou Ding; Yetai Fei; Zheguang Fan
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In-die registration metrology on future-generation reticles
Author(s): Klaus-Dieter Roeth; Frank Laske; Hiroshi Kinoshita; Daisuke Kenmochi; Karl-Heinrich Schmidt; Dieter Adam
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Advanced modeling strategies to improve overlay control for 32-nm lithography processes
Author(s): Anna Minvielle; Lovejeet Singh; Jeffrey Schefske; Joerg Reiss; Eric Kent; Terry Manchester; Brad Eichelberger; Kelly O'Brien; Jim Manka; John C. Robinson; David Tien
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Overlay mark optimization using the KTD signal simulation system
Author(s): Anat Marchelli; Karsten Gutjahr; Michael Kubis; Christian Sparka; Mark Ghinovker; Alessandra Navarra; Amir Widmann
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Fast analysis and diagnostics for improving overlay control: moving beyond the black box approach
Author(s): Yi-An Liu; Wei-Ming Wu; Hsiao-Chiang Lin; Jun-Cheng (Nelson) Lai; Chin-Chou (Kevin) Huang; Hsing-Chien (Robert) Wu; Healthy Huang; David Tien
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The study and simulation of high-order overlay control including field-by-field methodologies
Author(s): Dongsub Choi; Chulseung Lee; Changjin Bang; Myoungsoo Kim; Hyosang Kang; James Manka; Seunghoon Yoon; Dohwa Lee; John C. Robinson
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Sampling strategy: optimization and correction for high-order overlay control for 45nm process node
Author(s): Bo Yun Hsueh; George K. C. Huang; Chun-Chi Yu; Chin-Chou Kevin Huang; Chien-Jen Huang; James R. Manka; David Tien
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Automated overlay recipe setup in high-volume manufacturing: improving performance, efficiency, and robustness
Author(s): Christian Sparka; Anna Golotsvan; Yosef Avrahamov; Wolfgang Sitzmann; David Tien
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Optimization of alignment strategy for metal layer on local interconnect integration
Author(s): Jun-Kyu Ahn; Ji-Hyun Ha; Hong-Ik Kim; Jeong-Lyeol Park; Jae-Sung Choi; Tae-Jong Lee
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Challenges of long-term process stability and solutions for better control
Author(s): Jinphil Choi; Nakgeuon Seong; Sangho Lee; Youngseog Kang
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Use of 3D metrology for process control
Author(s): Bart Rijpers; Jo Finders; Hidekazu Suzuki; Toshiaki Fujii; Yuichiro Yamazaki; Hideaki Abe; Fabián Pérez-Willard
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Track optimization and control for 32nm node double patterning and beyond
Author(s): David Laidler; Craig Rosslee; Koen D'havé; Philippe Leray; Len Tedeschi
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Contact area as the intuitive definition of contact CD based on aerial image analysis
Author(s): Netanel Polonsky; Amir Sagiv; Shmoolik Mangan
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Focus and dose control for high-volume manufacturing of semiconductor
Author(s): Koichi Sentoku; Takeaki Ebihara; Hideki Ina
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Efficient use of design-based binning methodology in a DRAM fab
Author(s): Laurent Karsenti; Arno Wehner; Andreas Fischer; Uwe Seifert; Jens Goeckeritz; Mark Geshel; Dieter Gscheidlen; Avishai Bartov
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Proximity matching for ArF and KrF scanners
Author(s): Young Ki Kim; Lua Pohling; Ng Teng Hwee; Jeong Soo Kim; Peter Benyon; Jerome Depre; Jongkyun Hong; Alexander Serebriakov
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Scanner matching optimization
Author(s): Michiel Kupers; Patrick Klingbeil; Joerg Tschischgale; Stefan Buhl; Fritjof Hempel
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Comparative study of process window identification methods for 45 nm device and beyond
Author(s): HoSeong Kang; SooCheol Lee; MinHo Kim; KiHo Kim; YongTeak Jeong; YeonHo Pae; ChangHo Lee
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Improve scanner matching using automated real-time feedback control via scanner match maker (SMM)
Author(s): Shian-Huan (Cooper) Chiu; Sheng-Hsiung Yu; Min-Hin Tung; Lei-Ken Wu; Ya-Tsz Yeh; James Manka; Chao-Tien (Healthy) Huang; John Robinson; Chin-Chou (Kevin) Huang; David Tien; YuYu Chen; Katsushi Makino; Jium-Ming Lin
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Hole inspection technology using Fourier imaging method
Author(s): Kiminori Yoshino; Kenji Tsuchiya; Yuuichiro Yamazaki; Makoto Oote; Koichiro Shibayama; Akitoshi Kawai; Kazumasa Endo
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Investigation of factors causing difference between simulation and real SEM image
Author(s): M. Kadowaki; A. Hamaguchi; H. Abe; Y. Yamazaki; S. Borisov; A. Ivanchikov; S. Babin
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Development and implementation of PWQ on patterned wafer darkfield inspection systems
Author(s): Uwe Streller; Kay Wendt; Arno Wehner; Jens Goeckeritz; Markus Gahr; Martin Tuckermann; Jennifer Kopp; Monica Hellerqvist
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Development of a novel methodology for effective partial die inspection and monitoring
Author(s): Byoung-Ho Lee; Tae-Yong Lee; Andrew Cross; Masami Aoki; HeungSoo Choi; YeonHo Pae
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Evaluation of a new photoresist dispense system to detect coating variation
Author(s): Florent Gapin; Bernard Le-Peutrec; Laurent Stock; Marc Hanotte
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A study on effect of point-of-use filters on defect reduction for advanced 193nm processes
Author(s): Nelson Vitorino; Elizabeth Wolfer; Yi Cao; DongKwan Lee; Aiwen Wu
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Automated defect review of the wafer bevel with a defect review scanning electron microscope
Author(s): Steve McGarvey; Masakazu Kanezawa
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Results from prototype die-to-database reticle inspection system
Author(s): Bo Mu; Aditya Dayal; Bill Broadbent; Phillip Lim; Arosha Goonesekera; Chunlin Chen; Kevin Yeung; Becky Pinto
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Automated reticle inspection data analysis for wafer fabs
Author(s): Derek Summers; Gong Chen; Bryan Reese; Trent Hutchinson; Marcus Liesching; Hai Ying; Russell Dover
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Inspection and metrology tools benefit from free-form refractive micro-lens and micro-lens arrays
Author(s): Tanja Bizjak; Thomas Mitra; Lutz Aschke
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A scatterometry based CD metrology solution for advanced nodes, including capability of handling birefringent layers with uniaxial anisotropy
Author(s): Chih-Ming Ke; Jimmy Hu; Willie Wang; Jacky Huang; H. L. Chung; C. R. Liang; Victor Shih; H. H. Liu; H. J. Lee; John Lin; Y. D. Fan; Tony Yen; Noelle Wright; Ruben Alvarez Sanchez; Wim Coene; Marc Noot; Kiwi Yuan; Vivien Wang; Kaustuve Bhattacharyya; Karel van der Mast
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An inverse ellipsometric problem for thin film characterization: comparison of different optimization methods
Author(s): Ayşe Akbalık; Sébastien Soulan; Jean-Hervé Tortai; David Fuard; Issiaka Kone; Jérôme Hazart; Patrick Schiavone
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Analysis of Kohler illumination for 193 nm scatterfield microscope
Author(s): Yeung Joon Sohn; Richard Quintanilha; Lowell Howard; Richard M. Silver
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A new illumination technique for grating-based nanometer measurement applications
Author(s): Li Jiang
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SCATT: software to model scatterometry using the rigorous electromagnetic theory
Author(s): S. Babin; L. Doskolovich; Y. Ishibashi; A. Ivanchikov; N. Kazanskiy; I. Kadomin; T. Mikami; Y. Yamazaki
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Improved diffraction computation with a hybrid C-RCWA-method
Author(s): Joerg Bischoff
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Multi-purpose optical profiler for characterization of materials, film stacks, and for absolute topography measurement
Author(s): X. Colonna de Lega; Martin Fay; Peter de Groot; Boris Kamenev; J. Ryan Kruse; Mitch Haller; Mark Davidson; Lena Miloslavsky; Duncan Mills
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Immersion scanner proximity matching using angle resolving scatterometry metrology
Author(s): Ren-Jay Kou; Reiner Jungblut; Jan Hauschild; Shih-En Tseng; Jason Shieh; Jim Chen; Alek Chen; Koen Schreel
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Integrated ODP metrology with floating n&k's for lithography process
Author(s): Patrick Kearney; Dmitriy Likhachev; Junichi Uchida; Göran Fleischer
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Restoring pattern CD and cross-section using scatterometry: various approaches
Author(s): S. Babin; L. Doskolovich; E. Kadomina; I. Kadomin; S. Volotovskiy
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Process optimization for optical CD correlation improvement of ADI and AEI 3D structure by using iODP
Author(s): Anice Lee; Chung-Yi Lin; F. Y. Chen; Wen-Hao Chang; Sean Hsu; Allen Li; Ying Luo; Youxian Wen
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Using scatterometry to improve process control during the spacer pitch splitting process
Author(s): Scott Corboy; Craig MacNaughton; Thomas Gubiotti; Marcus Wollenweber
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Time dependence of SEM signal due to charging: measurements and simulation using Monte Carlo software
Author(s): H. Abe; S. Babin; S. Borisov; A. Hamaguchi; A. Ivanchikov; M. Kadowaki; Y. Yamazaki
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Arbitrary precision value overlay and alignment system by double positioning of mask and wafer and electronic datum and nano sensor (notice of removal)
Author(s): Wynn L. Bear; Xiang-Wen Xiong
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Noise-free estimation of spatial line edge/width roughness parameters
Author(s): Vassilios Constantoudis; Evangelos Gogolides
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