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PROCEEDINGS VOLUME 6922

Metrology, Inspection, and Process Control for Microlithography XXII
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Volume Details

Volume Number: 6922
Date Published: 28 April 2008

Table of Contents
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Front Matter: Volume 6922
Author(s): Proceedings of SPIE
Diffraction order control in overlay metrology: a review of the roadmap options
Author(s): Mike Adel; Daniel Kandel; Vladimir Levinski; Joel Seligson; Alex Kuniavsky
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Overlay metrology at the crossroads
Author(s): Nigel P. Smith; Lewis A. Binns; Albert Plambeck; Kevin Heidrich
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Production aspects of 45nm immersion lithography defect monitoring using laser DUV inspection methodology
Author(s): Remo Kirsch; Antje Martin; Uzodinma Okoroanyanwu; Wolfram Grundke; Ute Vogler; Mirko Beyer; Eran Valfer; Susan Weiher-Tellford; Renana Perlovitch; Nurit Racah; Peter Vanoppen; Richard Moerman
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Immersion lithography bevel solutions
Author(s): Len Tedeschi; Osamu Tamada; Masakazu Sanada; Shuichi Yasuda; Masaya Asai
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Versatile DUV scatterometer of the PTB and FEM based analysis for mask metrology
Author(s): Matthias Wurm; Alexander Diener; Bernd Bodermann; Hermann Gross; Regine Model; Andreas Rathsfeld
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Toward accurate feature shape metrology
Author(s): Ndubuisi G. Orji; Ronald G. Dixson; Benjamin D. Bunday; John A. Allgair
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Extracting dose and focus from critical dimension data: optimizing the inverse solution
Author(s): Kevin R. Lensing; J. Broc Stirton; Siddharth Chauhan
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Challenges of implementing contour modeling in 32nm technology
Author(s): Daniel Fischer; Geng Han; James Oberschmidt; Yong Wah Cheng; Jae Yeol Maeng; Charles Archie; Wei Lu; Cyrus Tabery
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The potentials of helium ion microscopy for semiconductor process metrology
Author(s): Michael T. Postek; Andas E. Vladár
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Evaluating diffraction based overlay metrology for double patterning technologies
Author(s): Chandra Saru Saravanan; Yongdong Liu; Prasad Dasari; Oleg Kritsun; Catherine Volkman; Alden Acheta; Bruno La Fontaine
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Plasma cleaning of nanoparticles from EUV mask materials by electrostatics
Author(s): W. M. Lytle; R. Raju; H. Shin; C. Das; M. J. Neumann; D. N. Ruzic
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Optical through-focus technique that differentiates small changes in line width, line height, and sidewall angle for CD, overlay, and defect metrology applications
Author(s): Ravikiran Attota; Richard Silver; Bryan M. Barnes
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Paving the way for multiple applications for the 3D-AFM technique in the semiconductor industry
Author(s): J. Foucher; E. Pargon; M. Martin; S. Reyne; C. Dupré
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Controlled deposition of NIST-traceable nanoparticles as additional size standards for photomask applications
Author(s): Jing Wang; David Y. H. Pui; Chaolong Qi; Se-Jin Yook; Heinz Fissan; Erdem Ultanir; Ted Liang
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Accurate and traceable dimensional metrology with a reference CD-SEM
Author(s): András E. Vladár; John S. Villarrubia; Petr Cizmar; Martin Oral; Michael T. Postek
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Sub-nanometer pitch calibration and data quality evaluation methodology
Author(s): Chih-Ming Ke; Yu-hsi Wang; Jaffee Huang; Jimmy Hu; Jacky Huang; Tsai-Sheng Gau; Burn J. Lin
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A novel AFM method for sidewall measurement of high-aspect ratio patterns
Author(s): Masahiro Watanabe; Shuichi Baba; Toshihiko Nakata; Takafumi Morimoto; Satoshi Sekino
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TEM validation of CD AFM image reconstruction: part II
Author(s): Gregory A. Dahlen; Hao-Chih Liu; Marc Osborn; Jason R. Osborne; Bryan Tracy; Amalia del Rosario
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Dimension controlled CNT probe of AFM metrology tool for 45-nm node and beyond
Author(s): Satoshi Sekino; Takafumi Morimoto; Toru Kurenuma; Motoyuki Hirooka; Hiroki Tanaka
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Overlay metrology tool calibration using blossom
Author(s): Lewis A. Binns; Nigel P. Smith; Prasad Dasari
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Using in-chip overlay metrology
Author(s): Stefanie Girol-Gunia; Bernd Schulz; Nigel Smith; Lewis Binns
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Diffraction based overlay metrology: accuracy and performance on front end stack
Author(s): Philippe Leray; Shaunee Cheng; Daniel Kandel; Michael Adel; Anat Marchelli; Irina Vakshtein; Mauro Vasconi; Bartlomiej Salski
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Optimization of high order control including overlay, alignment, and sampling
Author(s): Dongsub Choi; Chulseung Lee; Changjin Bang; Daehee Cho; Myunggoon Gil; Pavel Izikson; Seunghoon Yoon; Dohwa Lee
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Overlay measurement based on dual-overlay grating image
Author(s): Deh-Ming Shyu; Yi-sha Ku; Shu-Ping Dong
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Assessing scatterometry for measuring advanced spacer structures with embedded SiGe
Author(s): Matthew Sendelbach; Shahin Zangooie; Alok Vaid; Pedro Herrera; Jingmin Leng; InKyo Kim
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Characterization of 32nm node BEOL grating structures using scatterometry
Author(s): Shahin Zangooie; Matthew Sendelbach; Matthew Angyal; Charles Archie; Alok Vaid; Itty Matthew; Pedro Herrera
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Advanced profile control and the impact of sidewall angle at gate etch for critical nodes
Author(s): Hyung Lee; Alok Ranjan; Dan Prager; Kenneth A Bandy; Eric Meyette; Radha Sundararajan; Anita Viswanathan; Asao Yamashita; Merritt Funk
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Scatterometry as technology enabler for embedded SiGe process
Author(s): Alok Vaid; Rohit Pal; Matthew Sendelbach; Shahin Zangooie; Kevin Lensing; Carsten Hartig
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Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry
Author(s): Thaddeus G. Dziura; Benjamin Bunday; Casey Smith; Muhammad M. Hussain; Rusty Harris; Xiafang Zhang; Jimmy M. Price
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Industrial characterization of scatterometry for advanced APC of 65 nm CMOS logic gate patterning
Author(s): Karen Dabertrand; Mathieu Touchet; Stephanie Kremer; Catherine Chaton; Maxime Gatefait; Enrique Aparicio; Marco Polli; Jean-Claude Royer
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Impact of sampling on uncertainty: semiconductor dimensional metrology applications
Author(s): Benjamin Bunday; Bart Rijpers; Bill Banke; Chas Archie; Ingrid B. Peterson; Vladimir Ukraintsev; Thomas Hingst; Masafumi Asano
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CD uniformity control via real-time control of photoresist properties
Author(s): Ming Chen; Jun Fu; Weng Khuen Ho; Arthur Tay
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Process control for 45 nm CMOS logic gate patterning
Author(s): Bertrand Le Gratiet; Pascal Gouraud; Enrique Aparicio; Laurene Babaud; Karen Dabertrand; Mathieu Touchet; Stephanie Kremer; Catherine Chaton; Franck Foussadier; Frank Sundermann; Jean Massin; Jean-Damien Chapon; Maxime Gatefait; Blandine Minghetti; Jean de-Caunes; Daniel Boutin
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Improvement of gate CD uniformity for 55 nm node logic devices
Author(s): Takashi Murakami; Taisaku Nakata; Kensuke Taniguchi; Takayuki Uchiyama; Megumi Jyousaka; Masahide Tadokoro; Yoshitaka Konishi
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Metrology characterization for self-aligned double patterning
Author(s): Ami Berger; Sergey Latinsky; Maayan Bar-Zvi; Ram Peltinov; Jen Shu; Chris Ngai; James Yu; Huixiong Dai
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Focus and dose control to actual process wafer
Author(s): Hideki Ina; Koichi Sentoku
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Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment
Author(s): Yoshiyuki Sato; Yasuyuki Yamada; Yasuhiro Kaga; Yuuichiro Yamazaki; Masami Aoki; David Tsui; Chris Young; Ellis Chang
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Lot acceptance sampling inspection plan for non-normal CD distribution
Author(s): Takahiro Ikeda; Masafumi Asano
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Improvements on the simulation of microscopic images for the defect detection of nanostructures
Author(s): Stephan Rafler; Thomas Schuster; Karsten Frenner; Wolfgang Osten; Uwe Seifert
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Defect inspection using a high-resolution pattern image obtained from multiple low-resolution images of the same pattern on an observed noisy SEM image
Author(s): Masahiko Takashima; Yoshihiro Midoh; Koji Nakamae
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Contamination specification for dimensional metrology SEMs
Author(s): András E. Vladár; K. P. Purushotham; Michael T. Postek
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In-line inspection resistance mapping using quantitative measurement of voltage contrast in SEM images
Author(s): Miyako Matsui; Yoshihiro Anan; Takayuki Odaka; Hiroshi Nagaishi; Koichi Sakurai
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Experiment and simulation of charging effects in SEM
Author(s): S. Babin; S. Borisov; Y. Miyano; H. Abe; M. Kadowaki; A. Hamaguchi; Y. Yamazaki
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Characterization of CD-SEM metrology for iArF photoresist materials
Author(s): Benjamin Bunday; Aaron Cordes; N. G. Orji; Emil Piscani; Dan Cochran; Jeff Byers; John Allgair; Bryan J. Rice; Yohanan Avitan; Ram Peltinov; Maayan Bar-zvi; Ofer Adan
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Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography
Author(s): Mayuka Osaki; Maki Tanaka; Chie Shishido; Toru Ishimoto; Norio Hasegawa; Kohei Sekiguchi; Kenji Watanabe; Shaunee Cheng; David Laidler; Monique Ercken; Efrain Altamirano
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CD-SEM contour-based process monitoring in DRAM production environment
Author(s): Uwe Kramer; David Jackisch; Robert Wildfeuer; Stefan Fuchs; Franck Jauzion-Graverolle; Gilad Ben-Nahumb; Ovadya Menadeva; Stefano Ventola
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Accurate in-resolution level overlay metrology for multipatterning lithography techniques
Author(s): Ilan Englard; Richard Piech; Claudio Masia; Noam Hillel; Liraz Gershtein; Dana Sofer; Ram Peltinov; Ofer Adan
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Sources of overlay error in double patterning integration schemes
Author(s): David Laidler; Philippe Leray; Koen D’havé; Shaunee Cheng
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Correlating overlay metrology precision to interlayer dielectric film properties
Author(s): Kris R. Paserba
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Overlay improvement by zone alignment strategy
Author(s): Chun-Yen Huang; Ai-Yi Lee; Chiang-Lin Shih; Richer Yang; Michael Yuan; Henry Chen; Ray Chang
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Challenges of OPC model calibration from SEM contours
Author(s): Yuri Granik; Ir Kusnadi
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Empirical data validation for model building
Author(s): Aram Kazarian
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Automated creation of production metrology recipes based on design information
Author(s): Jason P. Cain; Mark Threefoot; Kishan Shah; Bernd Schulz; Stefanie Girol-Gunia; Jon-Tobias Hoeft
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Impact of assistance feature to pattern profile for isolated feature in sub-65 nm node
Author(s): Myungsoo Kim; Young-Je Yun; Eunsoo Jeong; Kwangseon Choi; Jeahee Kim; Jaewon Han
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Accurate device simulations through CD-SEM-based edge-contour extraction
Author(s): Eitan Shauly; Ovadya Menadeva; Rami Drori; Moran Cohen-Yasour; Israel Rotstein; Ram Peltinov; Avishai Bartov; Sergei Latinski; Amit Siany; Mark Geshesl
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Angle resolved optical metrology
Author(s): R. M. Silver; B. M. Barnes; A. Heckert; R. Attota; R. Dixson; J. Jun
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Opportunities and challenges for optical CD metrology in double patterning process control
Author(s): Daniel C. Wack; John Hench; Leonid Poslavsky; John Fielden; Vera Zhuang; Walter Mieher; Ted Dziura
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Forward solve algorithms for optical critical dimension metrology
Author(s): P. L. Jiang; H. Chu; J. Hench; Dan Wack
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Comparison of spectroscopic Mueller polarimetry, standard scatterometry, and real space imaging techniques (SEM and 3D-AFM) for dimensional characterization of periodic structures
Author(s): A. De Martino; M. Foldyna; T. Novikova; D. Cattelan; P. Barritault; C. Licitra; J. Hazart; J. Foucher; F. Bogeat
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Physical matching of CD-SEM: noise analysis and verification in FAB environment
Author(s): Uwe Kramer; Alessandra Navarra; Goeran Fleischer; Jan Kaiser; Frank Voss; Galit Zuckerman; Roman Kris; Igal Ben-Dayan; Elad Sommer; Amir Len; Shalev Dror; Dirk Schöne; Stefano Ventola
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AWV: high-throughput cross-array cross-wafer variation mapping
Author(s): Jeong-Ho Yeo; Byoung-Ho Lee; Tae-Yong Lee; Gadi Greenberg; Doron Meshulach; Erez Ravid; Shimon Levi; Kobi Kan; Saar Shabtay; Yehuda Cohen; Ofer Rotlevi
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CD bias reduction in CD-SEM linewidth measurements for advanced lithography
Author(s): Maki Tanaka; Jeroen Meessen; Chie Shishido; Kenji Watanabe; Ingrid Minnaert-Janssen; Peter Vanoppen
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Automatic CD-SEM offline recipe creation in a high volume production fab
Author(s): Stefanie Girol-Gunia; Stefan Roling; Ovadya Menadeva; Dan Levitzky; Adi Costa; Daniel Fischer
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Automated CD-SEM metrology for efficient TD and HVM
Author(s): Alexander Starikov; Satya P. Mulapudi
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Modeling for metrology with a helium beam
Author(s): Ranjan Ramachandra; Brendan J. Griffin; David C. Joy
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Novel CD inspection technology leveraging a form birefringence in a Fourier space
Author(s): Akitoshi Kawai; Daisaku Mochida; Kiminori Yoshino; Yuuichiro Yamazaki
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Experimental quantification of reticle electrostatic damage below the threshold for ESD
Author(s): Gavin C. Rider; Thottam S. Kalkur
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Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM
Author(s): Chengqing Wang; Kwang-Woo Choi; Ronald L. Jones; Christopher Soles; Eric K. Lin; Wen-li Wu; James S. Clarke; John S. Villarrubia; Benjamin Bunday
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A novel method for pushing the limits of line edge roughness detection by scatterometry
Author(s): Yoel Cohen; Barak Yaakobovitz; Yoed Tsur; David Scheiner
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Influence of image processing on line-edge roughness in CD-SEM measurement
Author(s): Atsuko Yamaguchi; Jiro Yamamoto
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Practical and bias-free LWR measurement by CDSEM
Author(s): S.-B. Wang; Y. H. Chiu; H. J. Tao; Y. J. Mii
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Fractal dimension of line width roughness and its effects on transistor performance
Author(s): V. Constantoudis; E. Gogolides
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Exploring the limitations of x-ray reflectivity as a critical dimension pattern shape metrology
Author(s): Hae-Jeong Lee; Sangcheol Kim; Christopher L. Soles; Eric K. Lin; Wen-Li Wu
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Probe-pattern grating focus monitor through scatterometry calibration
Author(s): Jing Xue; Costas J. Spanos; Andrew R. Neureuther
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An objective image focus for CD-SEM
Author(s): Huichai Zhang; Christopher Gould; Bill Roberts; Matthew McQuillan
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Ellipsometric inspection of the inner surface of pellicle-covered masks
Author(s): Sangyouk Lee; Chulgi Song; Jusang Rhim; Hyoungjoo Lee; Jaisun Kyoung; Soobok Chin; Taehyuk Ahn; Ilsin An
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Optics characterization with compact EUV spectrophotometer
Author(s): H. Blaschke; I. Balasa; L. Koch; K. Starke; D. Ristau; C. Wies; R. Lebert; A. Bayer; F. Barkusky; K. Mann
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Verification of optics for the die-to-wafer-like image mask inspection
Author(s): Akira Takada; Toru Tojo; Masato Shibuya
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Phase metrology on 45-nm node phase-shift mask structures
Author(s): Kyung M. Lee; Malahat Tavassoli; Ute Buttgereit; Dirk Seidel; Robert Birkner; Sascha Perlitz
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A new high-resolution photomask inspection system for contamination detection
Author(s): Bo Mu; Aditya Dayal; Lih-Huah Yiin; Jinggang Zhu; John Miller; Gregg Inderhees
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Systematic defect inspection and verification for distributions of critical dimension in OPC models utilizing design based metrology tool
Author(s): Jeong-Geun Park; Sang-ho Lee; Young-Seog Kang; Young-Kyou Park; Tadashi Kitamura; Toshiaki Hasebe; Shinichi Nakazawa
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Advanced method to monitor design-process marginality for 65nm node and beyond
Author(s): Crockett Huang; Chris Young; Hermes Liu; S. F. Tzou; David Tsui; Ellis Chang
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CD-SAXS measurements using laboratory-based and synchrotron-based instruments
Author(s): Chengqing Wang; Kwang-Woo Choi; Wei-En Fu; Derek L. Ho; Ronald L. Jones; Christopher Soles; Eric K. Lin; Wen-Li Wu; James S. Clarke; Benjamin Bunday
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A novel methodology for model-based OPC verification
Author(s): Tengyen Huang; ChunCheng Liao; Ryan Chou; Hung-Yueh Liao; Jochen Schacht
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Effect of setpoint on CD measurement in CD-AFM: plausibility study
Author(s): B. C. Park; J. Choi; S. J. Ahn; M-j Shin; D-c Ihm; B-h Lee
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Recent CD AFM probe developments for sub-45 nm technology nodes
Author(s): Hao-Chih Liu; Jason R. Osborne; Gregory A. Dahlen; Johann Greschner; Thomas Bayer; Samuel Kalt; Georg Fritz
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Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates
Author(s): G. P. Patsis; D. Drygiannakis; N. Tsikrikas; I. Raptis; E. Gogolides
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Application of model-based library approach to Si3N4 hardmask measurements
Author(s): Maki Tanaka; Chie Shishido; Wataru Nagatomo; Kenji Watanabe
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Calibration of CD-SEM: moving from relative to absolute measurements
Author(s): S. Babin; S. Borisov; A. Ivanchikov; I. Ruzavin
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Automated metrology for SEM calibration and CD line measurements using image analysis and SEM modeling methods
Author(s): Vitali Khvatkov; Vasily Alievski; Radi Kadushnikov; Sergey Babin
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Further study on the verification of CD-SEM based monitoring for hyper NA lithography
Author(s): T. Ishimoto; M. Osaki; K. Sekiguchi; N. Hasegawa; K. Watanabe; D. Laidler; S. Cheng
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MuGFET observation and CD measurement by using CD-SEM
Author(s): Tatsuya Maeda; Maki Tanaka; Miki Isawa; Kenji Watanabe; Norio Hasegawa; Kohei Sekiguchi; Rita Rooyackers; Nadine Collaert; Tom Vandeweyer
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High order correction and sampling strategy for 45nm immersion lithography overlay control
Author(s): Bo Yun Hsueh; George K. C. Huang; Chun-Chi Yu; Jerry K. C. Hsu; Chin-Chou Kevin Huang; Chien-Jen Huang; David Tien
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Improve overlay control and scanner utilization through high order corrections
Author(s): Hung Ming Lin; Benjamin Lin; James Wu; Smixer Chiu; Chin-Chou Kevin Huang; James Manka; Desmond Goh; Healthy Huang; David Tien
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Overlay control using scatterometry based metrology (SCOM) in production environment
Author(s): Berta Dinu; Stefan Fuchs; Uwe Kramer; Michael Kubis; Anat Marchelli; Alessandra Navarra; Christian Sparka; Amir Widmann
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Alignment system and process optimization for improvement of double patterning overlay
Author(s): Won-kwang Ma; Jung-hyun Kang; Chang-moon Lim; HyeongSoo Kim; Seung-chan Moon; Sanjay Lalbahadoersing; Seung-chul Oh
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Sampling for advanced overlay process control
Author(s): DongSub Choi; Pavel Izikson; Doug Sutherland; Kara Sherman; Jim Manka; John C. Robinson
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A system to optimize mix-and-match overlay in lithography
Author(s): Shinji Wakamoto; Yuuki Ishii; Koji Yasukawa; Shinroku Maejima; Atsuhiko Kato; John C. Robinson; Dong-Sub Choi
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Diffraction based overlay metrology for alpha-carbon applications
Author(s): Chandra Saru Saravanan; Asher Tan; Prasad Dasari; Gary Goelzer; Nigel Smith; Seouk-Hoon Woo; Jang Ho Shin; Hyun Jae Kang; Ho Chul Kim
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Film stacking architecture for immersion lithography process
Author(s): Tomohiro Goto; Masakazu Sanada; Tadashi Miyagi; Kazuhito Shigemori; Masashi Kanaoka; Shuichi Yasuda; Osamu Tamada; Masaya Asai
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Controlling macro and micro surface topography for a 45nm copper CMP process using a high resolution profiler
Author(s): Thomas Ortleb; Gerd Marxsen; Jens Heinrich; Jeff Reichert; Ronny Haupt; Petrie Yam
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Effects produced by CDU improvement of resist pattern with PEB temperature control for wiring resistance variation reduction
Author(s): Masahide Tadokoro; Shinichi Shinozuka; Kunie Ogata; Tamotsu Morimoto
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Rationalizing the mechanism of HMDS degradation in air and effective control of the reaction byproducts
Author(s): Kevin Seguin; Andrew J. Dallas; Gerald Weineck
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Stress measurement system for process control
Author(s): Kumiko Akashika; Masahiro Horie
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CDU improvement technology of etching pattern using photo lithography
Author(s): Masahide Tadokoro; Shinichi Shinozuka; Megumi Jyousaka; Kunie Ogata; Tamotsu Morimoto; Yoshitaka Konishi
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Film thickness measurement tool with a stress measurement function
Author(s): Masahiro Horie; Kumiko Akashika; Shuji Shiota; Shinji Yamaguchi; Kakumichi Yamano
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In-situ real-time temperature control of baking systems in lithography
Author(s): Yuheng Wang; Hui-Tong Chua; Arthur Tay
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Dimensionality reduction methods in virtual metrology
Author(s): Dekong Zeng; Yajing Tan; Costas J. Spanos
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Wide applications of design based metrology with tool integration
Author(s): Hyunjo Yang; Jungchan Kim; Areum Jung; Taehyeong Lee; Donggyu Yim; Jinwoong Kim; Toshiaki Hasebe; Masahiro Yamamoto
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Wafer edge polishing process for defect reduction during immersion lithography
Author(s): Motoya Okazaki; Raymond Maas; Sen-Hou Ko; Yufei Chen; Paul Miller; Mani Thothadri; Manjari Dutta; Chorng-Ping Chang; Abraham Anapolsky; Chris Lazik; Yuri Uritsky; Martin Seamons; Deenesh Padhi; Wendy Yeh; Stephan Sinkwitz; Chris Ngai
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High throughput wafer defect monitor for integrated metrology applications in photolithography
Author(s): Nagaraja Rao; Patrick Kinney; Anand Gupta
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UV-reflectometory for fast trench-depth measurement
Author(s): Masahiro Horie; Shuji Shiota; Shinji Yamaguchi; Kakumichi Yamano; Masayoshi Kobayashi
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Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (III): novel method for ADI on metal hard mask by penetration contrast
Author(s): Teruyuki Hayashi; Misako Saito; Kaoru Fujihara; Jack Jau
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Improving dry etch control for contact plugs in advanced DRAM manufacturing
Author(s): Tianming Bao; Yuval Bar; David Fong; Mukund Godbole
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In-line focus-dose monitoring for hyper NA imaging
Author(s): Sara Loi; Alejandro Fasciszewski Zeballos; Umberto Iessi; John Robinson; Pavel Izikson; Antonio Mani; Marco Polli
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Picometer-scale accuracy in pitch metrology by optical diffraction and atomic force microscopy
Author(s): Donald A. Chernoff; Egbert Buhr; David L. Burkhead; Alexander Diener
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Development of back-end-of-the-line applications using optical digital profilometry (ODP)
Author(s): Jun-Ji Huang; J. H. Yeh; Ying Luo; Li Wu; Youxian Wen
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Scatterometry based overlay metrology
Author(s): Takahiro Matsumoto; Hideki Ina; Koichi Sentoku; Satoru Oishi
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Spectroscopic ellipsometer for ultra thin film
Author(s): Kumiko Akashika; Shuji Shiota; Shinji Yamaguchi; Masahiro Horie; Masayoshi Kobayashi
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Characterization of sub-50-nm line array structures with angle-resolved multiple wavelength scatterometry
Author(s): Michael Kotelyanskii; Fei Shen; Gary Jiang; Benjamin Bunday
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Sensitivity and performance estimates for the multiple wavelength multiple incidence angle ellipsometry for OCD applications
Author(s): Michael Kotelyanskii; Gary Jiang
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Modeling the effect of finite size gratings on scatterometry measurements
Author(s): Elizabeth Kenyon; Michael W. Cresswell; Heather J. Patrick; Thomas A. Germer
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Characterization of the poly gate ACI structure with laser based angle resolved multiple wavelength scatterometry
Author(s): Gary Jiang; Michael Kotelyanskii; Fei Shen
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Low-k n&k variation impact on CD accuracy of scatterometry
Author(s): Yan Chen; Masahiro Yamamoto; Dmitriy Likhachev; Gang He; Akihiro Sonoda; Vi Vuong
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Implementation of spectroscopic critical dimension (SCD) for leveling inline monitor of ASML 193nm scanner
Author(s): W. K. Lin; Mike Yeh
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3D semiconductor grooves measurement simulations (scatterometry) using nonstandard FDTD methods
Author(s): Hirokimi Shirasaki
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Novel approach for immersion lithography defectivity control to increase productivity
Author(s): Ilan Englard; Raf Stegen; Peter Vanoppen; Ingrid Minnaert-Janssen; Ted der Kinderen; Erik van Brederode; Frank Duray; Jeroen Linders; Denis Ovchinnikov; Rich Piech; Claudio Masia; Noam Hillel; Erez Ravid; Ofer Rotlevi; Amir Wilde; Saar Shabtay; Zach Telor; Robert Schreutelkamp
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Traceable calibration of AFM step height measurements for integrated circuit manufacturing
Author(s): James Robert; Bill Banke; Ronald Dixson; Carlos Strocchia-Rivera
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22 nm node contact hole formation in extreme ultra-violet lithography
Author(s): Eun-Jin Kim; Kwan-Hyung Kim; Hyeong-Ryeol Park; Jun-Yeob Yeo; Jai-Soon Kim; Hye-Keun Oh
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Advanced lithography parameters extraction by using scatterometry system: part II
Author(s): Wenzhan Zhou; Michael Hsieh; Huipeng Koh; Meisheng Zhou
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Compensating for SSIS sizing/classification error in a defect review SEM world
Author(s): David Ruprecht; Steve McGarvey
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