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Gallium Nitride Materials and Devices
Editor(s): Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar

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Volume Details

Volume Number: 6121
Date Published: 10 February 2006

Table of Contents
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TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions
Author(s): Z. Liliental-Weber; D. Zakharov; B. Wagner; R. F. Davis
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Effects of growth interruption time on InGaN/GaN quantum dots grown by metal organic chemical vapor deposition
Author(s): H. H. Yao; G. S. Huang; T. C. Lu; C. Y. Chen; W. D. Liang; H. C. Kuo; S. C. Wang
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Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Author(s): M. Bockowski; I. Grzegory; G. Nowak; G. Kamler; B. Łucznik; M. Wróblewski; P. Kwiatkowski; K. Jasik; S. Krukowski; S. Porowski
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Investigation of the strain distribution of GaN/AlN wurtzite structure material self-organized truncated pyramid shaped quantum dot
Author(s): Yumin Liu; Zhongyuan Yu
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Quantum-structure dependent excitonic carrier dynamics of InxGa1-xN/GaN multi-quantum-wells
Author(s): Sangsu Hong; Yong Seok Kim; Young Joon Yoon; June Sik Park; Bae Kyun Kim; Alexander Fomin; Gyu Han Lee; Je Won Kim; Hyung Koun Cho; Taiha Joo
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Microscopic emission properties of nonpolar α-plane GaN grown by HVPE
Author(s): T. Paskova; R. Kroeger; P. P. Paskov; S. Figge; D. Hommel; B. Monemar; B. Haskell; P. Fini; J. S. Speck; S. Nakamura
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Growth of bulk GaN by HVPE on pressure grown seeds
Author(s): I. Grzegory; B. Łucznik; M. Boćkowski; B. Pastuszka; M. Kryśko; G. Kamler; G. Nowak; S. Porowski
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Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
Author(s): C. Skierbiszewski; G. Cywiński; M. Siekacz; A. Feduniewicz-Zmuda; L. Nevou; L. Doyennette; M. Tchernycheva; F. H. Julien; J. Smalc; P. Prystawko; M. Kryśko; S. Grzanka; I. Grzegory; J. Z. Domagała; T. Remmele; M. Albrecht; S. Porowski
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Cathodoluminescence study of GaN and GaN:Si on sapphire
Author(s): Nicolas Pauc; Matthew Phillips; Vincent Aimez; Dominique Drouin
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Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates
Author(s): J. Xie; Y. Fu; Ü. Özgür; Y. T. Moon; F. Yun; H. Morko; H. O. Everitt; A. Sagar; R. M. Feenstra; C. K. Inoki; T. S. Kuan; L. Zhou; D. J. Smith
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Structural and optical characterization of wurtzite Al0.8In0.2N thin films grown by low temperature magnetron sputter epitaxy
Author(s): T. Seppänen; L. Hultman; J. Birch
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Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications
Author(s): Ashok K. Sood; Rajwinder Singh; Yash R. Puri; Frederick W. Clarke; Oleg Laboutin; Paul M Deluca; Roger E. Wesler; Jie Deng; James C. M. Hwang
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Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition
Author(s): Joan J. Carvajal; Nadia Gomez; Jie Bai; Michael Dudley; J. Carlos Rojo
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Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices
Author(s): Mohammad Z. Kauser; Andrei Osinsky; Brian Hertog; Amir Dabiran; Peter Chow
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Studies of electron trapping in III-nitride semiconductors
Author(s): Olena Lopatiuk; Andrei Osinsky; Leonid Chernyak
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Direction dependent homoepitaxial growth and bandgap of GaN nanowires
Author(s): Mahendra K. Sunkara; Hongwei Li; Alan H. Chin
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Conductive atomic force microscopy study of MBE GaN films
Author(s): J. C. Moore; K. A. Cooper; J. Xie; H. Morko; A. A. Baski
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Very low dislocation density AlN substrates for device applications
Author(s): Sandra B. Schujman; Leo J. Schowalter; Wayne Liu; Joseph Smart
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Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors
Author(s): Matthew H. Kane; Martin Strassburg; Ali Asghar; Nola Li; Will Fenwick; Ian T. Ferguson
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Investigation of band gaps and bowing parameters for zincblende III-nitride ternary alloys
Author(s): Bo-Ting Liou; Sheng-Horng Yen; Yen-Kuang Kuo
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Surface spatial profiles of defects in GaN
Author(s): D. K. Johnstone; S. Akarca-Biyikli; J. Xie; Y. Fu; C. W. Litton; H. Morkoc
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Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides
Author(s): T. Suski; G. Franssen; P. Perlin; H. Teisseyre; A. Kamińska
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Etched facet technology for GaN and blue lasers
Author(s): Alex Behfar; Alfred Schremer; Jeff Hwang; Cristian Stagarescu; Alan Morrow; Malcolm Green
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Recovery of GaN surface after reactive ion etching
Author(s): Qian Fan; S. Chevtchenko; Xianfeng Ni; Sang-Jun Cho; Hadis Morko
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Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays
Author(s): M. B. Reine; A. Hairston; P. Lamarre; K. K Wong; S. P. Tobin; A. K. Sood; C. Cooke; M. Pophristic; S. Guo; B. Perez; R. Singh; C. R. Eddy Jr.; U. Chowdhury; M. M. Wong; R. D. Dupuis; T. Li; S. P. DenBaars
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Ferroelectric PZT/AlGaN/GaN field effect transistors
Author(s): Youn-Seon Kang; Bo Xiao; Ya. I. Alivov; Qian Fan; Jinqiao Xie; Hadis Morko
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Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
Author(s): S. Nikishin; B. Borisov; V. Kuryatkov; A. Usikov; V. Dmitriev; M. Holtz
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Gd-implanted GaN as a candidate for spin injector
Author(s): V. Avrutin; Ü. Özgür; J. Xie; Y. Fu; F. Yun; H. Morko; V. I. Litvinov
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High reflectivity and thermal-stability Cr-base reflectors and n-type ohmic contact for GaN-based flip-chip light-emitting diodes
Author(s): Kuang-Po Hsueh; Kuo-Chun Chiang; Charles J. Wang; Yue-Ming Hsin
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Applications of transparent Al-doped ZnO contact on GaN-based power LED
Author(s): C. J. Tun; J. K. Sheu; B. J. Pong; M. L. Lee; M. Y. Lee; C. K. Hsieh; C. C. Hu; G. C. Chi
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Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes
Author(s): Jung-Hye Chae; Han-Youl Ryu; Kyu-Sang Kim; Kyoung-Ho Ha; Suhee Chae; Hyungkun Kim; Sung-Nam Lee; Kwang-Ki Choi; Taehoon Jang; Joong-Kon Son; Ho-Sun Baek; Youn-Joon Sung; Sakong Tan; Younhee Kim; Ok-Hyun Nam; Yong-Jo Park
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