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Process and Materials Characterization and Diagnostics in IC Manufacturing

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Volume Details

Volume Number: 5041
Date Published: 15 July 2003

Table of Contents
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Neural-network-based time series modeling of optical emission spectroscopy data for fault detection in reactive ion etching
Author(s): Sang Jeen Hong; Gary Stephen May
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Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control
Author(s): Jerome Hazart; Gilles Grand; Philippe Thony; David Herisson; Stephanie Garcia; Oliver Lartigue
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Copy result exactly using EB-Scope technology
Author(s): Keizo Yamada; Takeo Ushiki; Yousuke Itagaki; Robert Newcomb
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Defect distribution model validation and effective process control
Author(s): Lei Zhong
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COPs/particles discrimination using an automated surface inspection tool
Author(s): Gabriele Lorenzi; Kim Hung Nguyen; Cristina Sanna; Roberta Orizio; Gabriella Borionetti
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In-line e-beam inspection with optimized sampling and newly developed ADC
Author(s): Masami Ikota; Akihiro Miura; Munenori Fukunishi; Takashi Hiroi; Aritoshi Sugimoto
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Characterization and reduction of copper chemical-mechanical-polishing-induced scratches
Author(s): Tai Yong Teo; Wang Ling Goh; Lup San Leong; Victor Seng Keong Lim; Tak Yan Tse; Lap Chan
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Successful demonstration of a comprehensive lithography defect monitoring strategy
Author(s): Ingrid B. Peterson; Louis H. Breaux; Andrew Cross; Michael von den Hoff
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Advanced ASIC defect control
Author(s): Chuck May; John Knoch; Roger Y. B. Young
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Novel technique for contamination analysis around the edge, the bevel, and the edge exclusion area of 200- and 300-mm silicon wafers
Author(s): Chris M. Sparks; Carolyn Gondran; Patrick S. Lysaght; John T. Donahue
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Sidewall structure estimation from CD-SEM for lithographic process control
Author(s): Philip R. Bingham; Jeffery R. Price; Kenneth W. Tobin Jr.; Thomas P. Karnowski; Marylyn Hoy Bennett; E. Hal Bogardus; Michael Bishop
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CD-SEM measurement line-edge roughness test patterns for 193 nm lithography
Author(s): Benjamin D. Bunday; Michael Bishop; John S. Villarrubia; Andras E. Vladar
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Location of interconnect defects using focused ion beam (FIB)-induced voltage contrast and subsequent in-situ FIB cross-sectioning and auger electron analysis in the Physical Electronics 200/300-mm SMART-tool
Author(s): Carolyn F. H. Gondran; Dennis F. Paul; Kenton D. Childs; Laurie G. Dennig; Greg C. Smith
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X-ray reflectivity: a new metrology alternative for DUV ARCs
Author(s): Dileep Agnihotri; Derek Calhoun; Joseph Formica; Joseph Harmon; Lance Nevala
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LithoCell-integrated critical dimension metrology
Author(s): J. Broc Stirton; Clinton W. Miller; Anita Viswanathan; Makoto Miyagi; Lawrence Lane; Michael A. Laughery; Tarun Parikh; Kin Chung Chan; Apo Sezginer
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Complete monitoring strategy to quantify matching and performance for multiple CDSEM in advanced fab
Author(s): Pey-Yuan Lee; Chi-Shen Lo; Yi-Hung Chen; Thomas Teng; Steven Fu; Mico Chu; Jason C. Yee
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Industry survey on nonvisual defect detection
Author(s): Carol A. Boye
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Semiconductor wafer defect detection using digital holography
Author(s): Mark A. Schulze; Martin A. Hunt; Edgar Voelkl; Joel D. Hickson; William R. Usry; Randall G. Smith; Robert Bryant; C. E. Thomas Jr.
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Nanovision: a new paradigm for enabling fast optical inspection of nanoscale structures
Author(s): Michael E. Watts; Rodolfo E. Diaz
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In-line measurement characterization for multilayer film stack of SiGe by advance spectroscopy ellipsometer
Author(s): Jay Chih-Chieh Chen; Arun Srivatsa; Chin Cheng Chien; Tony En-Tzu Liu
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Development of an electron optical system using EB projection optics in reflection mode for EB inspection
Author(s): Yuichiro Yamazaki; Ichirota Nagahama; Atsushi Onishi
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Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry
Author(s): Thomas Gubiotti; David Jacy; Ray J. Hoobler
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Intentional defect array wafers: their practical use in semiconductor control and monitoring systems
Author(s): Iraj Emami; Michael McIntyre; Michael Retersdorf
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