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Photodetectors: Materials and Devices IV

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Volume Details

Volume Number: 3629
Date Published: 7 April 1999

Table of Contents
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Photovoltaic IV-VI on silicon infrared devices for thermal imaging applications
Author(s): Hans Zogg
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MOVPE growth of HgCdTe for bandgap engineered IR detector arrays
Author(s): Pradip Mitra; Marion B. Reine
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Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures
Author(s): Krzysztof Jozwikowski; Jozef Piotrowski; Krzysztof Adamiec; Antoni Rogalski
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Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors
Author(s): Honnavalli R. Vydyanath; Vaidya Nathan; Latika S. R. Becker; Gary N. Chambers
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Comparison of mercury cadmium telluride LPE layers growth from Te-rich solution on (111)Cd0.95Zn0.05Te and (211)Cd0.95Zn0.05Te
Author(s): Krzysztof Adamiec; Jaroslaw Rutkowski; Antoni Rogalski; Waldemar Gawron; Leszek Kubiak
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Device physics and focal plane array applications of QWIP and MCT
Author(s): Meimei Z. Tidrow; William A. Beck; William W. Clark III; Herbert K. Pollehn; John W. Little; Nibir K. Dhar; Richard P. Leavitt; Stephen W. Kennerly; Daniel W. Beekman; Arnold C. Goldberg; Walter R. Dyer
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Optimizing electron-photon coupling in quantum well infrared photodetectors
Author(s): Ying Fu; Magnus Willander; Wei Lu; W. L. Xu; Ning Li; Na Li; Shuechu Shen
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Generation-recombination noise in multiple quantum well infrared photodetectors
Author(s): Maxim Ershov
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Characteristics of a superlattice infrared detector and comparison with QWIP
Author(s): Mao-Chieh Hsu; Y.F. Hsu; Kuan H. Chen
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Broadband quantum well infrared photodetectors
Author(s): Sheng S. Li; Jerome T. Chu; Jiangchi Chiang; Jung Hee Lee; Anjali Singh
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Multicolor 4- to 20-um InP-based quantum well infrared photodetectors
Author(s): Christopher Louis Jelen; Steven Slivken; Gail J. Brown; Manijeh Razeghi
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Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode
Author(s): Emmanuel Dupont; Hui C. Liu; Margaret Buchanan; Zbigniew R. Wasilewski; Daniel St-Germain; Paul C. Chevrette
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Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing
Author(s): Xingquan Liu; Wei Lu; Xiaoshuang Chen; Shuechu Shen; Hui Z. Wang; Fuli Zhao; Xiguang Zheng; Ying Fu; Magnus Willander
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Materials-theory-based device modeling for III-nitride devices
Author(s): P. Paul Ruden
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AlxGa1-xN p-i-n photodiodes on sapphire substrates
Author(s): Danielle Walker; Patrick Kung; Peter M. Sandvik; Jia-Jiun Wu; Melissa Hamilton; Il Hwan Lee; Jacqueline E. Diaz; Manijeh Razeghi
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AlGaN-based photodetectors for solar UV applications
Author(s): Elias Munoz Merino; E. Monroy; Fernando Calle; Miguel A. Sanchez; Enrico Calleja; Franck Omnes; Pierre J. L. Gibart; Francisco Jaque; Inigo Aguirre de Carcer
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Electrical characterization of AlxGa1-xN for UV photodetector applications
Author(s): Adam W. Saxler; Mohamad Ahoujja; W. C. Mitchel; Patrick Kung; Danielle Walker; Manijeh Razeghi
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High-sensitivity visible-blind UV detectors made with organic semiconductors
Author(s): Gang Yu; Yong Cao; Gordana Srdanov
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Solar-blind UV region and UV detector development objectives
Author(s): Peter Schreiber; Tuoc Dang; Thad Pickenpaugh; Gary A. Smith; Paul Gehred; Cole W. Litton
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Avalanche photodiodes for detection of eye-safe laser pulses
Author(s): Andrew T. Hunter
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Epitaxial growth of HgCdTe 1.55-um avalanche photodiodes by molecular beam epitaxy
Author(s): Terence J. de Lyon; B. Baumgratz; G. R. Chapman; E. Gordon; Andrew T. Hunter; Michael D. Jack; John E. Jensen; W. Johnson; Blaine D. Johs; Kim Kosai; W. Larsen; Greg L. Olson; M. Sen; Burt Walker
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Avalanche photodetector in the GaSb/AlSb/InAs material system by molecular beam epitaxy
Author(s): Xiao-Chang Cheng; Thomas C. McGill Jr.
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Modeling of the terahertz response of metal-semiconductor-metal photodetectors
Author(s): Maxim Ryzhii; Irina Khmyrova; Victor Ryzhii; Magnus Willander
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High-performance InSb/In1-xAlxSb focal plane detector arrays grown by MBE
Author(s): Andrew D. Johnson
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High-speed high-efficiency resonant-cavity-enhanced photodiodes
Author(s): Ekmel Ozbay; Ibrahim Kimukin; Necmi Biyikli; Orhan Aytur; Mutlu Goekkavas; Goekhan Ulu; M. Selim Unlu; Richard P. Mirin; Kristine A. Bertness; David H. Christensen; Elias Towe; Gary Tuttle
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NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector
Author(s): Serguei Jourba; Marie-Paule Besland; Michel Gendry; Michel Garrigues; Jean Louis Leclercq; Pedro Rojo-Romeo; Pierre Viktorovitch; Sebastein Cortial; Xavier Hugon; Christophe Pautet
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Ultrafast photodetectors with near-unity quantum efficiency
Author(s): Goekhan Ulu; Mutlu Goekkavas; M. Selim Unlu; Necmi Biyikli; Ekmel Ozbay; Orhan Aytur; Richard P. Mirin; David H. Christensen
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InGaAs versus HgCdTe for short-wavelength infrared applications
Author(s): Antoni Rogalski; Robert Ciupa
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Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications
Author(s): Jedon D. Kim; Hooman Mohseni; Joseph S. Wojkowski; J. J. Lee; Manijeh Razeghi
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Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD
Author(s): Seong Sin Kim; Matthew Erdtmann; Manijeh Razeghi
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Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range
Author(s): Joseph S. Wojkowski; Hooman Mohseni; Jedon D. Kim; Manijeh Razeghi
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SIN tunnel junction as a temperature sensor
Author(s): D. Golubev; Leonid S. Kuzmin; Magnus Willander
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Process monitoring of semiconductor thin films and interfaces by spectroellipsometry
Author(s): Romain Brenot; Bernard Drevillon
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Internal stress around micropipes in 6H-SiC substrates
Author(s): Hitoshi Ohsato; Tomohisa Kato; Takashi Okuda; Manijeh Razeghi
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Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs
Author(s): Gong-Ru Lin; Ci-Ling Pan
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Photoreflection spectrum on Si-surface-delta-doped GaAs
Author(s): Wei Lu; Xingquan Liu; Xiaoshuang Chen; Guo Liang Shi; Yimin Qiao; Shuechu Shen; Ying Fu; Magnus Willander
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HgCdTe photodiode passivated with a wide-bandgap epitaxial layer
Author(s): Jaroslaw Rutkowski; Antoni Rogalski; Krzysztof Adamiec
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Influence of the c-axis orientation on the optical properties of thin CdS thin films formed by laser ablation
Author(s): Natalia M. Dushkina; Bruno Ullrich; Hisashi Sakai; Tomoaki Eiju; Yusaburo Segawa
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Near-infrared photodetectors based on a HgInTe-semiconductor compound
Author(s): Alexander I. Malik; Manuela Vieira; Miguel Fernandes; Filipe Macarico; Zinaida M. Grushka
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Electronic structure and intersubband absorption in p-doped twinning superlattices
Author(s): Milan Tadic; Zoran Ikonic
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Modeling of MSM photodetectors
Author(s): Laurence W. Cahill
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Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth
Author(s): Patrick Kung; Danielle Walker; Peter M. Sandvik; Melissa Hamilton; Jacqueline E. Diaz; Il Hwan Lee; Manijeh Razeghi
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Lateral epitaxial overgrowth for defect-free GaN substrates
Author(s): Jaime A. Freitas Jr.; Gennady V. Saparin; Ok-Hyun Nam; Tsvetanka S. Zheleva; Robert F. Davis
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UV Schottky-barrier detector development for possible Air Force applications
Author(s): Gary A. Smith; Michael J. Estes; Joseph E. Van Nostrand; Tuoc Dang; P. J. Schreiber; Henryk Temkin; J. Hoelscher
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Roadmap of semiconductor infrared lasers and detectors for the 21st century
Author(s): Manijeh Razeghi
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