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Multilevel Interconnect Technology
Editor(s): Divyesh N. Patel; Mart Graef

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Volume Details

Volume Number: 3214
Date Published: 5 September 1997

Table of Contents
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Advanced PVD Ti/TiN liners for contact and via applications
Author(s): Hans-Joachim Barth; J. Bierner; Hans Helneder; Werner K. Robl; K. Schober; Manfred Schneegans
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Line length dependencies in interconnect optimization
Author(s): Daniel Kadoch; Michael Duane; Yohan Lee
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Electroless Cu and barrier layers for subhalf-micron multilevel interconnects
Author(s): Sergey D. Lopatin; Yosef Y. Shacham-Diamand; Valery M. Dubin; P. K. Vasudev
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Integrated arc suppression unit for defect reduction in PVD applications
Author(s): Jason Li; Murali K. Narasimhan; Vikram Pavate; David Loo; Steve Rosenblum; Larry Trubell; Richard Scholl; Scott Seamons; Chris Hagerty; Sesh Ramaswami
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Correlation between aluminum alloy sputtering target metallurgical characteristics, arc initiation, and in-film defect intensity
Author(s): Vikram Pavate; Murali Abburi; Sunny Chiang; Keith Hansen; Glen Mori; Murali K. Narasimhan; Sesh Ramaswami; Jaim Nulman; Daryl Restaino
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Thermal stability of PECVD W-B-N thin film as a diffusion barrier
Author(s): YongTae Kim; Dong Joon Kim; Chang Woo Lee; Jong-Wan Park
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Productivity enhancement by replacing photoresist etchback by chemical-mechanical polishing for interlayer dielectric planarization
Author(s): Klaus Leitner; Norbert Elbel; Klaus Koller
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Tungsten CMP process characterization for sub-0.35-um micron technology
Author(s): Christopher Chia; Jia Zhen Zheng; Wei Jiang; Yan Tse Tak
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Low-pressure aluminum planarization for sub-0.5-um contact and via holes
Author(s): Maxmilian A. Biberger; D. Conci; J. Lyons; M Rumer; L. Tam; G. Tkach; V. Hoffman; E. P. Martin; Sailesh M. Merchant
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Study of wetting properties of Ti/TiN liners deposited by ion metal plasma PVD for low-temperature sub-0.25-um Al fill technology
Author(s): Simon Hui; Ken Ngan; Murali K. Narasimhan; Barry Hogan; Gongda Yao; Sesh Ramaswami
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Integration of low-k organic flowable SOG in a non-etchback/CMP process
Author(s): George Chou; Amanda Shiaw-Rong Chen; W. Y. Hsieh
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Characterization of high-density plasma CVD USG film
Author(s): Wei Lu; Jia Zhen Zheng; John Sudijuno; Hoon Lian Yap; Kok Seng Fam; Catherine Leong; Marvin D. Liao; Yih Shung Lin
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Novel MOCVD processes for nanoscale dielectric and ferroelectric thin films
Author(s): Tingkai Li; Peter A. Zawadzki; Richard A. Stall
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Plasma-induced metal sidewall undercut and its dependence on the layout geometry
Author(s): David Y. Hu; Alex Q. Zhang; Joseph Xie; Qian Yin; Shao Kai
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Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-um IC process applications
Author(s): Simon Hui; Ken Ngan; Murali K. Narasimhan; John Forster
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Removal of surface oxide from electrical test (E-test) pads using an argon sputter etch procedure to recover TAB wafers
Author(s): Tina A. Petersen-Buchheit; William R. Johannes; Divyesh N. Patel; Jeffrey F. Coleman
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