For low-dimensional semiconductor systems, matrix elements of optical dipole transitions versus different directions of the radiation polarization vector have been analyzed in detail. Analytical and numerical calculations are performed for quantum-well heterostructures in III-V semiconductor compounds. An influence of the spectral broadening due to intrasubband relaxation of current carriers on the transformation of light emission spectra in TE and TM modes with excitation has been studied. Distributions of electromagnetic wave fields and the optical confinement factor for TE and TM modes in multiple quantum-well layer structures, including a novel type of asymmetric heterostructures, have been determined. For quantum-wire structures, including a novel type of asymmetric heterostructures, have ben determined. For quantum-wire structures, the degree of light emission polarization has been examined and effects in porous Si luminescence are explained.

Five-layer AlGaAs double heterostructure injection laser diodes were investigated by measurements of radiation polarization ratios of separate spectrum components and different emitting channels from laser surface. It was found that radiation of the diode is polarized in the plane of the active layer with polarization ratio about 10 percent when pumping currents are sufficiently less of the threshold magnitudes. Polarization ratio of separate spectrum components and an overall radiation increases sharply with the approach to the oscillations lasing threshold and reaches value about 90 percent with conservation of the polarization plane. At the same time the polarization ratio of some radiating channels can decrease sufficiently as the injection current reaches magnitudes above threshold current.

Through the extension of the matrix formalism the dispersion properties of multilayered waveguides for TE and TM modes are expressed in simple formulas. The considerations of waveguiding are investigated in isotropic absorbing and nonabsorbing film systems. The influence of position, thickness and absorption of the central thin film on the propagation of the light in five layered planar waveguides are analyzed in detail. When the central metallic absorbing film is located in the middle of the structure the expressive suppressing of guided modes of the even orders in perceptible. The results show that the guided mode tuning effect can be realized with nonabsorbing structure. The important dependence of effective refraction indices of the guided modes on the central film thickness has been observed.

The Mueller matrix method is powerful for the experimental determination of optical devices polarization behaviors. In the particular case of optical fiber, this method has rarely been used. An experimental methodology for measuring Mueller matrices of monomode fiber under uniform strains is presented. On the base of a theoretical model derived from coupled-mode equations, the physical parameters of the fiber can be estimated. These estimate parameters can then be used to test the validity of this model and to evaluate their influence on the polarimetric behavior of the fiber.

A comparative description of slowly twisting optically anisotropic media such as highly birefringent polarization- maintaining optical fibers and chiral nematic liquid crystal based on the mode-coupling theory is presented. The problem is analyzed in the Mauguin limit, where large linear birefringence of the medium dominates over the twisting effect. Both anisotropic media are discussed in the presence of hydrostatic pressure that is found to slightly modify a weak twist coupling between the local modes, but can strongly influence polarization properties of the light propagating in the media creating new polarimetric sensing opportunities.

We study numerically, using the Mie theory, light transmission through a multiply scattering medium composed of a collection of uncorrelated, optically inactive spherical particles. The characteristic length over which a plane wave field is depolarized depends on whether it is initially linearly or circularly polarized and of the size of the particles In a medium containing particles small compared to the wavelength, the characteristic length of depolarization for incident linearly polarized light is found to exceed that for incident circularly polarized light, while the opposite is true in a medium composed of particles large compared to the wavelength. Comparison of numerical results with data from measurements on suspensions of polystyrene latex spheres in water is made. Agreement between these simulations and experiment is good for the range of sizes considered in this paper. We also discuss the relevance of the helicity flip model to the analysis of these data.

New phase conjugator for pseudodepolarized laser beams resulting form multiple scattering is described. The phase conjugator is based on a so-called quadric hologram, i.e., a hologram whose amplitude response contains the terms of a power series expansion on exposure degrees up to the quadratic one, recorded with a standing reference wave. Phase conjugate mirror results from an interference among partial cross-gratings associated with two components of the standing reference wave. Being read out with pseudodepolarized signal beam only, a quadric hologram generates its time-inverted twin in self-conjugation fashion. Conditions for fine polarization structure of the signal beam to be reproduced in a phase-conjugated response are discussed.

The problem of an associative data reconstruction with a true brightness tone rendering for a general case of nonuniformly polarized stored signals is considered.It is shown that a quadric hologram technique with two cross- polarized reference waves gives a complete solution of the problem. Being addressed with an arbitrary partial version of the stored signal irrespective of its polarization, a quadric hologram reconstructs a complex-conjugated high- fidelity associative response.

A polarization modulation polarimeter for a HPLC detector has been designed and constructed based on a principle, the electrical null-point detection method, which is entirely different from that of a commercially available polarimeters, the optical null-point detection method. The Mueller matrix method is used to analyze and evaluate important factors determining its performance. It is revealed that a crystal quartz Rochon prism must be used as a polarizer, and should be mounted on a rotatable stage equipped with a mechanism for precise adjustment to set its azimuth angle at 0 degrees as precisely as possible. Furthermore, all optical components used should have the least amount of the residual static birefringence. The total performance of our polarimeter is found to be equivalent to that of commercially available polarimeters.

A universal polarimeter for studying the optical anisotropy of transparent and weakly absorbing crystals in presented. It allows to determine simultaneously birefringence, optical indicatrix rotation, optical activity and linear and circular dichroisms. The method is based on the null- polarimetric measurements of the polarization azimuth and the ellipticity of the light emergent from a sample and takes properly into account the systematic errors related to imperfections of the optical equipment. The origins of the errors are discussed and the working theoretical relations used in the polarimeter are deduced. The measuring and data processing procedures are illustrated with experiments on a sample of ferroelectric triglycine sulphate. The developed technique is compared to the well-known HAUP with the emphasis at adhering the principles of high-accuracy polarimetry.

The theoretical idea describing a new technical solution of a polarimeter designed for measurements of a rotation angle of light polarization plane is presented. The detecting part of a polarimeter consists of a linear phase shifter, an analyzer placed at suitable azimuth behind them and a detector. Phase shift between orthogonally polarized waves is controlled by a computer. A change of a detector signal is assigned to a change of a phase shift on linear phase shifter. In this way, a location of light polarization plane before linear phase shifter may be measured. Theoretical considerations have been corroborated by experimental results.

In most of modern polarimeters and ellipsometers a compensator is present which is used to change the ellipticity of light incident at a crystal in the PCSA system or compensate the ellipticity of light emergent from a crystal in the PSCA system. Most often, a quarter wave plate is used as a compensator. A problem of using the quarter wave plates of which fast axis has to be replaced by the slow one often arises in polarimetric experiments. For this aim the authors study the quarter wave plates made of Gd₂(MoO₄)₃, and DKDP which allow to carry out the mentioned procedure by applying the external electric field to those crystals. In this work the possibility is analyzed for utilizing the compensator of this type in polarimetric investigations with elliptic polarizer. Use of electrically switched compensators in the polarizer-sample- compensator-analyzer system enables to analyze experimentally the 'HAUP maps' dynamics, when changing the output analyzer ellipticity, and evaluate the correspondence of the adopted mathematical model for the polarization scheme concerning the parasitic ellipticities p and q of polarizers.

An arrangement is presented for nonmechanical azimuth change or rotation of a linear polarizer that is followed by a photodetector. The arrangement uses a polarization modulator or variable retarder as the driving element for azimuth change interposed between a quarter-wave plate and the polarizer to be rotated. The polarization modulator or variable retarder is oriented with its fast axis at 45 degree related to that of the quarter-wave plate and the axis of the polarizer. Operation of the modulator or variable retarder results in a nonmechanical azimuth change or rotation of the polarizer equal to one half of the retardance of the modulator or variable retarder. The present arrangement, which can be used for constructing an azimuth-variable analyzer, has been verified by experiments.

The paper describes the device for measuring the normal- reflection birefringence with using of the compensation method. The suggested scheme may be used for research of optical anisotropy in optical recording disks, inner stress in transparent solid body, birefringence of crystals and for the measuring of temperature, pressure, electrical and magnetic field strength.

Light emitted by laser diodes is partially polarized. Hence modulation or isolation of such light should be analyzed based on Stokes parameters and Mueller matrix method, which are well fitted for such analysis. In the paper the most common magneto-optical phenomena used for modulation or isolation of light are described. Next principle of operation of the magneto-optical modulation and isolation is done. Magneto-optical modulation of partially polarized light is discussed in detail. Optical isolation of such light is considered as well. In conclusions, some results of analysis helpful for designers of magneto-optical modulators or isolators are discussed.

This paper presents two concepts of the design of antireflection coatings for wide-angle windows for selected wavelength. The first one is the simple application of corrected wide-band antireflection coatings designed at a normal incidence. The second is stack optimized at large angle of incidence. The design is made at 0 degrees-65 degrees range of angles of incidence.

The results of research and development of a two-frequency He-Ne laser with the wavelength 0.63 micrometers , which could find wide application in realization of heterodyne methods in polarimetry, ellipsometry and interferometry are presented. The radiation of the laser contains two waves with linear orthogonal polarizations and frequency difference in the region 0.5-50 MHz.

A polarimetric technique for studying the parameters of the waveplates is developed. It uses dependencies of the polarization azimuth and ellipticity of the light emergent from the waveplate on the azimuth of linearly polarized incident light. When the latter azimuth is sufficiently small, the dependencies become linear, their slopes being dependent on the phase retardation of the crystal plate. This allows to test the waveplates with a high accuracy. Relevant results obtained for a number of quartz and mica quarter-wave retarders are presented. The technique is compared with the other methods known in the literature.

In this work practical investigations of residual stresses in LiNbO₃ crystals measured by the computer-controlled imaging polarimeter are compared with theoretical model developed for oxide crystalline materials. A good qualitative agreement has been found between theory and experiment regarding residual stress distributions in wafers cut out perpendicularly to the crystal's growth axis.

The paper presents of review of some methods for study optical properties of crystals possessing the optical activity, the birefringence and the dichroism simultaneously which were elaborated by the authors during the last several years. Two main approaches are considered: one making use of the measurement of the azimuth of transmitted light as a function of the incident light azimuth, the other one is based on the measurement of the light intensity transmitted through the sample placed between two polarizers. The intensity change is measured and analyzed depending on the rotation angle of the sample with crossed and parallel polarizers. The theoretical basis of this approach for the general case of nonorthogonal eigen waves is developed. The consideration is based on Muller matrix formalism.

The polarimetry technique applicable to the determination of 3D distribution of anisotropy parameters in solids is presented in the paper. The technique is a compound of a mixed numerical experimental method being developed for the purposes of 3D state of stress evaluation in solids. Suggested polarimetry technique is designed with the exploitation of reconstructive tomography principles and operates in a two-stage way: at first a set of experimental data is measured and then a numerical calculation is performed. The technique is supposed to be used as a part of a novel general approach to the durability analysis of brittle structures.

The optical activity of single crystals of trigonal quartz and its structural analog germanium dioxide, is studied with the help of photoelectric polarimeter. The rotatory power was recorded in the wavelength range 633-365 nm accurate to +/- 0.02 deg/mm. Our experiments showed that the value of rotary power (curly phi) for germanium dioxide was 1.5 times greater than that of quartz, and therefore, the former is more promising in optical applications. The dispersion dependencies of the rotatory power for crystals under study analyzed within the framework of the Chandrasekhar's model allowed us to estimate the wavelengths of the fundamental absorption bands that amount to approximately 0.1 micrometers for both objects. The effect of reactor irradiation on the rotatory power of quartz was also examined. These investigations showed that (curly phi) decreases with an increase in the dose, vanishing at 10²⁰ n/cm². This fact is due to the local irradiation damage of quartz lattice and its gradual amorphization. It should be noted that the value of the characteristic wavelength for the irradiated quartz does not change within the whole dose range studied. This fact provides an evidence that the silicon-oxygen tetrahedron remains as a structural unit of quartz even in its matemict phase.

Using the high-accuracy principles, spontaneous and induced parametric phenomena are studied in lead germanate-silicate Pb₅(Ge_1-xSi_x)₃O₁₁ (x equals 0.4) crystals near the ferroelectric phase transition. The symmetry of the phasers is appropriate for simultaneous measuring all the effects. It is essential that at re- polarizing crystals under the electric field, the optical activity sign changes, while the linear birefringence remains unaltered. This enables to find easily the parameters related to the systematic polarimetric errors. Although the crystals mentioned may be regarded as typical ferroelectrics with the second order phase transition, the temperature and the field dependencies of the effects measured depends notably on the sample conductivity, the domain structure and the light scattering at structural defects.

In this paper one of the methods of polarimeter investigation of exciton spectra is proposed. The analysis is based on the peculiarities of semiconductor layer crystals, the dipole moment of the exciton transition and one of the main properties of the laser wave, its polarization. As a result, libation oscillations of the exciton dipole become quite actual in anisotropic semiconductors. This leads to the change of the mechanism of light absorption on the exciton frequencies and to the actualization of the indirect vertical phototransition with the change of the polarization angle. These processes result in the depolarization of the absorption spectrum, its structurization, and redistribution of the power along the frequency scale. Finally, the dying away of purely exciton absorption and the increase of oscillatory components take place.

The cornea is the outermost segment of the eyeball. Due to its lamellar structure the cornea indicates the optical anisotropy and effect of birefringence. In this study, the corneal birefringence properties have been investigated by numerical simulations and experimental measurements. A theoretical model of the corneal birefringence is considered. Ray tracing through such a model depending on different approximations of the corneal topography is calculated. In the paper photographs of the polarization patterns of the cornea in vivo with linearly polarized light are presented. Numerical and experimental results are compared and discussed.

The operation of distributed polarimetric fiber-optical sensors using wavelength scanning technique is discussed along with algorithms for processing of a signal coming form the sensor to retrieve the information about the distribution of external force and field along the fiber. The principle of the sensor operation is based on a change of spectral and polarization characteristics of broad-band radiation, propagating in the fiber, caused by the external influence. The distribution of the external force along the fiber is determined by the computer processing of the output spectrum. The analysis of such sensor and the results of our experiments demonstrate high spatial resolution and sensitivity.

An extensive description of fiber optic interferometer with any optical configuration basing on Jones' matrix calculus is presented. An introduction of a special classification of interferometric systems has made possible to model differences and similarities in a description of particular group of interferometers. For modeling purposes a description of optic fibers by means of Kapron's rule of equivalence has been introduced. Possibilities of a reduction of polarization effect on particular systems are also described.

Results of initial studies of multiplexed polarimetric fiber optic sensing systems for smart structures applications are presented. The prepared polarimetric smart structures based on Fibercore bow-tie fibers were subjected to deformation effects such as those induced by hydrostatic pressure and temperature, whereas polarization properties of the transmitted optical signal have been investigated. The presence of the smart structure modifies the output characteristics of the highly birefringent fiber due to elastic properties of the structure. The applied experimental procedure had an objective to compare the phenomena occurring in both: the embedded fibers and the separated highly birefringent fibers influenced by the same deformation effects.

A novel nonlinear polarimetric technique based on a vector interaction of polarization-modulated optical waves and heterodyne detection of nonlinear change of optical polarization is described and discussed. The technique is demonstrated as an accurate and sensitive spectroscopic tool for investigation of the nonlinear processes in light- transducing biopolymers like rhodopsins and chlorophylls.

This article is devoted to the comparison of possibilities of ellipsometry, surface plasmon spectroscopy and their combination in the investigation of thin films. The problem of separation of the thickness and refractive index of the film of interest is considered as well as the possibility to find the transverse optical anisotropy of such film. The special attention to the way for comparison of different methods is paid. It is proved the only such way can show which method gives more information about an investigated systems and allows to inspect the surface treatment more exactly. Such comparison is made for different kinds of substrate in the case of standard ellipsometry, as well as for separated surface plasmon spectroscopy and ellipsometry with surface electromagnetic waves excitation.

The complex method of optical characterization of thin metal films with overlayers consisting of three types of measurements has ben developed and testified. It based on both transparency measurements and multi-angle reflectance ellipsometry including the surface plasmons excitation regime. The computation of layers thicknesses and their optical constants by the solution of the inverse ellipsometric problem using the modified method of general search and special choice of fitting function has been carried out. The method was used for Au and Ag layers evaporated on GaAs, InP or quartz substrates.

We report the extension of the spectroscopic rotating- analyzer-ellipsometry to generalized ellipsometry (GE) in order to define and to determine three essentially normalized elements of the optical JONES matrix J. These elements can be measured in reflection or transmission arrangement regardless of the specific structural and/or anisotropic properties of a particular sample. A 4 by 4- matrix algebra has ben presented for electromagnetic plane waves reflected or transmitted at arbitrarily anisotropic and homogeneous layered systems including a special solution for continuously twisted biaxial materials. This algorithm has a general approach for materials with linear optical response behavior. The optical JONES matrix represents the experimental link to the 4 by 4-matrix algebra. The combination of both, the 4 by 4-matrix algorithm and GE allows for the analysis of complex layered samples containing anisotropic materials. We report on the application of GE to birefringent dielectrics, chiral liquid crystals and spontaneously ordered III-V compounds. From a regression analysis we obtain the intrinsic optical properties of the anisotropic materials.

The new method for the determination of the high absorptive thin film parameters is proposed. This technique consist in the complex ellipsometry + photometry measurements. The comparison of the principal parameters of the proposed technique and the traditional ellipsometry methods is carried out.

Comparison of the precision of measurements by means of null-ellipsometer with rotating analyzer is made here on the base of the developed formalism. The dependence of measurement's errors on the reflectivity of an investigated system is taken into account and is the base of the presented comparison.

We present ellipsometric measurements on Langmuir-Blodgett monolayer assemblies of photochromic polymers; the polymer we used was a statistical copolymer with polymethacrylate mainchains and azobenzene sidegroups. Ellipsometry gives a value of n equals 1.557 for the refractive index and a film thickness of 1.58 nm per monolayer. When exposed to light of appropriate wavelength, the azobenzene groups undergo a trans (reversible reaction) cis photoisomerization process which was monitored by ellipsometry. We found an average change in film thickness of 0.02 nm per monolayer during the trans(reversible reaction)cis transition process, whereas the data obtained do not show any significant change in refractive index.

The results of using the inhomogeneous models as well as technique for their error determining are demonstrated. An inhomogeneous profile error was presented as set of 'error profiles'. The homogeneous, linear and exponential models of profiles of N and K were used for searching. Initial colloid SiO₂ film, after its heating and exposition in air as well as after reactivating was studied. The layers with decreasing PbO component were found on surface of PbO-SiO₂ glass. Graded N and K profiles of In₂O₃-SnO₂ film, used as transparent conducting electrode, were determined by multiangle ellipsometry at wavelength of 632.8 nm.

Using two measurements in vacuum and under condition for condensing water, one might more correctly determine the true refractive index N_true and porosity Q with Bruggeman's EMA. The characteristics of chamber-attachment to ellipsometer, algorithm and application samples of new method for SiO₂, ZrO₂, HfO₂, a-C:H, and In₂O₃-SnO₂ films are presented. It is found that the differences between measurements of an effective refractive index N_ef in air, in vacuum and with condensed water may be up to 0.09. The void fraction for these films are range from 0 to 0.277, Difference between N_true and N in air may be up to 0.036.

Reflection of light from gyrotropic uniaxial film with arbitrary axis orientation accounting or repeated reflections is investigated. This problem is considered by using the covariant method for an oblique incidence of light, for different refractive indices of ambient and substrate and it is solved numerically. As a result diagonal and off-diagonal components of the reflectance matrice are calculated. Dependences of the reflection coefficients as a function of the orientation of the optical axis and gyration tenser components are discussed. The gyrotropy manifestation in anisotropic films such as changing the symmetry of the system, appearance of off-diagonal reflection coefficients in symmetrical optical orientations are shown. Such characteristic dependences makes possible the experimental determination of gyrotropy with reflected light by using ellipsometric measurements.

New multi-wavelength in-situ ellipsometer acquiring accurate ellipsometric data at 44 wavelength form 415 to 750 nm in less than 1s is directly mounted on a MBE growth system. Compared to single wavelength ellipsometers enough measured data are available to have access to layer thickness, composition, temperature and exact angle of incidence. In- situ monitoring and real time analysis was used to control the process of GaAs/AlGaAs Bragg reflectors with center wavelength of 1000 nm. The layer thickness is controlled very accurately even though ellipsometric data was acquired only every 3 seconds. The accuracy of shutter timing can be made very precisely even for slow ellipsometric acquisition rates and substrate wobble due to MBE substrate rotation. The control algorithm for two reflectors did not attempt to control the Al composition of an individual AlGaAs layer, but the measured composition was used to adjust the Al cell temperature for the next AlGaAs layer. In comparison for another reflector, the FastDyn fitting routine were used to simultaneously control the thickness and surface composition of the AlGaAs layers. An overview about the hardware and software integration on the MBE system will be given. The in-situ measurements during the growth control were later compared with ex-situ measurements made with spectroscopic ellipsometer system VASE.

Ellipsometric investigations of optical properties of GaAs implanted with energy in the range 50 keV to 300 keV with different ions are presented. Assuming a layer model for the implanted samples, the ellipsometric measurements are analyzed to obtain the refractive index, extinction coefficient and the thickness of dopant layers.

The internal photo injection phenomena in a semitransparent gate metal-oxide-semiconductor (MOS) structure were described among others by the Przewlocki formula. This formula describes the dependence between external voltage applied to the gate to get zero photoelectric current and the light absorption in both electrodes. To study optical properties of the MOS structure, ellipsometric measurements and calculations for the Al-SiO₂-Si system were done using J.A. Woolam spectroscopic ellipsometer VASE. The optical model of this structure was determined and used to calculate the dependence of the voltage on the light wavelength (lambda) in Przewlocki's formula.

Kinetics of formation of an oxide on the CdTe surface was investigated during a sample exposition in air at temperatures T_h equals 20 degrees C, 260 degrees C, 340 degrees C, 420 degrees C, for 200 hours. For nonoxide CdTe surface the following values of optical constants n_s equals 2.6 and k_s equals 0.6 are received. At a exposition of samples at room temperature a refractive index of an oxide film changed from n_f equals 1.7 at initial stages of growth up to n_f equals 2.37 after 200 hours oxidation. At all stages of oxidation process the monotone reduction of a refractive index of oxide layers at an increase of heating temperature is found out. During natural oxidation oxide layer thickness reaches 1.8 nm in the course of 20 hours. Hereafter oxide formation speed decreases that results in stabilization of its thickness. It is shown that the growth of the oxide phase is descried with the parabolic law and is checked with diffusion processes. To determine the energy of oxidation process activation the charts of dependence of logarithm of oxide film thickness upon inverse temperature at constant oxidation time were built. The presence of two areas of heating temperatures with different energy of oxidation process activation is established. The parameters of kinetic equation are determined which describe oxide film growth in low temperature and high temperature fields.

The ellipsometry method is used to study the optic properties of the real gold-doped gallium arsenide surface. The ellipsometric angles (Psi) and (Delta) were measured with the LEF-3M laser ellipsometer in the range of angles (curly phi) equals 45 degrees-85 degrees to an accuracy 0.5. The optical constants and the interfacial layer thickness were calculated using the ELLA application package. The structure model proposed for the metal-doped gallium arsenide surface takes into account the specific deposition of the dopant and the dopant distribution over the surface. The ellipsometry data are compared with those obtained by electron microscopy. The ellipsometry method is shown to be useful in the estimation of the degree of coating and the doped surface morphology.

The potentials of multiple angle of incidence ellipsometry in determining several parameters of stratified structures are discussed. The principles of the correct formulation of the ellipsometric inverse problem are presented. We have applied Tickhonov's regularization algorithm to obtain information about a model describing the system studied. It represents the results of the numerical experiments showing the applicability and the specific feature of the developed algorithm. The experimental results are presented.

Polarization interference metrology of the optical fields' transverse correlation function and its amplitude and phase statistical moments are discussed. Examples of application of such a metrology to the problem of surface roughness diagnostics are also presented.

The method of envelopes and based on reflectance measurements only, is developed for investigation of uniaxial absorbing films formed on absorbing substrates. Two optical axis orientations parallel and perpendicular to the film interfaces are analyzed. Reflectance spectra for p and s linear polarizations are used to determine the complex dielectric constants of the film E_o ((lambda) ) and E_e ((lambda) ) and its thickness. For the transparent films the analytical solutions are obtained for these parameters. The simple iterative procedure are used for their determination in the case of absorbing films. Numerical model calculations are carried out to study the characteristics of the method developed. They show high stability of the real parts of E_o and h determination to the measurement error.

Absolute reflectivity measurements are needed for the determination of optical parameters and the thickness of a film on an absorbing substrate by method of envelopes. In the article the ratio of minima and maxima envelopes of the reflectance spectra is introduced. This parameter allows to avoid absolute measurements. An application of the ratio measurements for the analysis of isotropic absorbing homogeneous films is described. Provided the film is transparent, the approach proposed leads to the simple analytical solution of an inverse problem.

Simulation of polarization photosensitivity of Schottky- barrier waveguide photodetector to optimize layers parameters is demonstrated. The operation of polarization photosensitive detector is based on nonequivalent in light transmission through the multilayer structure interface for different polarizations. We show that insertion of a matching layer between waveguide and detector can improve the coupling in evanescently coupled, integrated waveguide photodetectors. The absorption coefficient of a InGaAs Schottky-barrier photodetector integrated with a InGaAsP-InP waveguide is analyzed. A surface plasmon-polariton waves excited in thin film semiconductor-metal structure provide selective coupling of light into semiconductor with increased quantum efficiency. By combining the selective properties of the surface electromagnetic modes with convenient photodetective device design, it can achieve polarization-, angle- and wavelength-dependent detectors. Such kind of experiment is realized by special choice of grating periodicity.