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Infrared Detectors for Remote Sensing: Physics, Materials, and Devices
Editor(s): Randolph E. Longshore; Jan W. Baars

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Volume Details

Volume Number: 2816
Date Published: 22 October 1996

Table of Contents
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Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon
Author(s): Sergio Bernardi
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Bond stability and electronic properties of Hg1-xZnxTe solid solutions
Author(s): Rene' Granger; Robert Triboulet; Serge R. Rolland
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MBE growth of HgCdTe IR detector structures on Si substrates: recent advances and future prospects
Author(s): Terence J. de Lyon; Rajesh D. Rajavel; John E. Jensen; Owen K. Wu; J. A. Vigil; Scott M. Johnson; Charles A. Cockrum; G. M. Venzor
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PbSnSe-on-Si infrared techniques: improvements in materials and devices
Author(s): Hans Zogg; Alexander Fach; Joachim John; Peter Mueller; Carmine Paglino
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IR detection at room temperature using semiconducting YBaCuO
Author(s): Donald P. Butler; Agha Jahanzeb; Pao C. Shan; Christine Mollenkopf Travers; Zeynep Celik-Butler
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Infrared response of silicide Schottky barrier detectors formed from mixed Pt/Ir layers on Si
Author(s): Peter Lahnor; R. Schmiedl; Dieter Woerle; Volker Demuth; Max J. Schulz
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Required composition uniformity of Hg1-xCdxTe substrate for focal plane arrays
Author(s): Vishnu Gopal
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IR focal planes based on GaInSb/InAs superlattices
Author(s): Richard H. Miles; Jerry A. Wilson
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Improved HgCdTe detectors with novel antireflection coating
Author(s): R. Sachidananda Babu; Kelley Hu; Sridhar Manthripragada; Robert J. Martineau; Carl A. Kotecki; F. A. Peters; Andre S. Burgess; Danny J. Krebs; David Brent Mott; Audrey J. Ewin; Avery I. Miles; Trang L. Nguyen; Peter K. Shu
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GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors
Author(s): Henry X. Yuan; A. G. Unil Perera; M. H. Francombe; Sisira Kankanam Gamage; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Effect of CH4/H2 ECR plasma etching on the electrical properties of p-type Hg1-xCdxTe
Author(s): Jan W. Baars; R. C. Keller; Hans-Joachim Richter; Matthias Seelmann-Eggebert
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Picosecond InP photoconductors produced by deep implantation of heavy ions
Author(s): Grigorii S. Sokolovskii; Edward U. Rafailov; Anton G. Deryagin; V. I. Kuchinskii; Efrim L. Portnoi; A. Moujoud; Mari Ochiai; Henryk Temkin
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Wide spectral response of two-dimensional grating for quantum well infrared detector and wideband bound/quasi-bound QWIPs
Author(s): Dongfeng Pan; Jinmin Li; YiPing Zeng; Mei-Ying Kong
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Advances in 15-um HgCdTe photovoltaic and photoconductive detector technology for remote sensing
Author(s): Marion B. Reine; Eric E. Krueger; P. O'Dette; C. Lynne Terzis; Brian Denley; Jeanne M. Hartley; James H. Rutter Jr.; Douglas E. Kleinmann
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Development of a 2D array for 1- to 2.35-um hyperspectral imager
Author(s): Olivier Saint-Pe; Olivier Donnadieu; Robert Davancens; Dave E. Charlton; Alberto S. Menardi; Marino Fabbricotti; Bernd Harnisch; Roland Meynart; Bernd Paul Kunkel
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ALADDIN: the 1024x1024 InSb array--design, description, and results
Author(s): Albert M. Fowler; Ian Gatley; Paul McIntyre; Frederick J. Vrba; Alan W. Hoffman
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High-background longwave Si:As IBC 320x240 IR focal plane array
Author(s): Steven Lawrence Solomon; Alan C. Tribble; Nancy A. Lum; John E. Venzon; George Domingo; Alan W. Hoffman; Michael S. Smith
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