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Photodetectors: Materials and Devices
Editor(s): Manijeh Razeghi

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Volume Details

Volume Number: 2685
Date Published: 12 April 1996

Table of Contents
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HgCdTe material properties and their influence on IR FPA performance
Author(s): Charles A. Cockrum
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MBE-grown HgCdTe heterojunction structures for IR FPAs
Author(s): Owen K. Wu; Rajesh D. Rajavel; T. J. DeLyon; Joe E. Jensen; Charles A. Cockrum; Scott M. Johnson; G. M. Venzor; G. R. Chapman; Jerry A. Wilson; Elizabeth A. Patten; William A. Radford
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Heteroepitaxy of CdTe on Si substrates in view of infrared and x-ray detection
Author(s): Jean-Pierre Faurie; Leo Anthony Almeida; Yuanping Chen; R. Sporken; Sivalingam Sivananthan
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Peculiarities of electrically active states generation in HgCdTe
Author(s): Volodymyr G. Savitsky; Peter E. Storchun
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Superlattice IR detectors: a theoretical view
Author(s): Henry Ehrenreich; Michael E. Flatte; Christoph H. Grein
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Optical absorption and photoresponse in fully quaternary p-type quantum well detectors
Author(s): James R. Hoff; Christopher Louis Jelen; Steven Slivken; Gail J. Brown; Manijeh Razeghi
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Advances in uncooled LWIR thermal sensors
Author(s): Raymond S. Balcerak; A. Trent DePersia
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320 x 240 microbolometer focal plane array for uncooled applications
Author(s): William A. Radford; David R. Murphy; Michael Ray; Steven H. Propst; Adam Kennedy; Kevin L. Soch; R. Coda; G. Lung; Edgar A. Moody; D. Gleichman
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Sol-gel-derived lead and calcium lead titanate pyroelectric detectors on silicon MEMS structures
Author(s): James G. Ho; Phyllis R. Nelson; Felice H. Lin; David T. Chang; William J. Kaiser; Oscar M. Stafsudd
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Sb-based infrared materials and photodetectors for the 3-5 and 8-12 um range
Author(s): Erick J. Michel; Jedon D. Kim; Seoijin Park; Jianren Xu; Ian T. Ferguson; Manijeh Razeghi
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Semiconductor ultraviolet detectors
Author(s): Manijeh Razeghi; Antoni Rogalski
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GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update
Author(s): Patrick Kung; Adam W. Saxler; Xiaolong Zhang; Danielle Walker; Manijeh Razeghi; Melville P. Ulmer
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UV photodetectors based on AlxGa1-xN grown by MOCVD
Author(s): Adam W. Saxler; Danielle Walker; Xiaolong Zhang; Patrick Kung; Jianren Xu; Manijeh Razeghi
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UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond
Author(s): Peter B. Kosel; D. Wu; A. M. Dalton; Amir Amin Hanjani; S. F. Carr; P. R. Emmert; R. L. C. Wu
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Fabrication and performance characteristics of high-speed ion-implanted Si metal-semiconductor-metal photodetectors
Author(s): Niloy K. Dutta; Doyle T. Nichols; D. C. Jacobson; Gabriela Livescu
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Modeling high-speed MSM photodetectors
Author(s): Laurence W. Cahill
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High-performance GaAs metal-semiconductor-metal photodetectors grown at intermediate temperatures
Author(s): Gregory B. Tait; Andre H. Sayles; Bradford C. Tousley; Arthur C. Paolella; Paul W. Cooke
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Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment
Author(s): Wei Gao; Paul Raymond Berger; Robert G. Hunsperger; Jagadeesh Pamulapati; Richard T. Lareau
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Suspended YBaCuO microstructures on CeO2/YSZ membranes for sensitive bolometers
Author(s): Laurence Mechin; Jean-Claude Villegier; Daniel Bloyet
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Silicon-based resonant cavity detectors for long-wave infrared imaging
Author(s): David J. Robbins; Roger Timothy Carline; Mark Brian Stanaway; Weng Y. Leong
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Quantum well intersubband heterodyne infrared detection up to 82 GHz
Author(s): Jianmeng Li; Hui Chun Liu; Elliott R. Brown; K. Alexander McIntosh; Kirby B. Nichols; M. J. Manfra
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Submillimeter spectroscopy of residual photoconductivity and magnetoresistance in PbSnTe(In)
Author(s): Andrey P. Chebotarev; Christian Kremser; Erich Gornik; I. D. Voronova; Alexander P. Nikitin
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Simple computer analysis of InP and GaAs avalanche photodetectors using different ionization rate data
Author(s): J. P. Banerjee
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