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Spectroscopic Characterization Techniques for Semiconductor Technology V
Editor(s): Orest J. Glembocki

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Volume Details

Volume Number: 2141
Date Published: 26 May 1994

Table of Contents
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Optical processes in quantum dots and wires
Author(s): Cliva M. Sotomayor-Torres; Peidong D. Wang; Nikolai N. Ledentsov; Yin-Sheng Tang
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Interface disorder effects on confined phonons in semiconductor microstructures
Author(s): B. Jusserand
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Optical determination of (partial) ordering in ordered alloys
Author(s): Judah Ari Tuchman; Orest J. Glembocki; Roger Sillmon; E. R. Glaser; M. E. Twigg
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Effects of P4 annealing on ordered Ga0.52In0.48P
Author(s): Xiaoming Yin; Matthew C. DeLong; Q. Li; P. Craig Taylor; Hei-Ruey H. Jen; Jeannie E. Williams; Kathleen Meehan
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Characterization of semiconductor device structures by modulation spectroscopy
Author(s): Hao Qiang; Dong Yan; Yichun Yin; Fred H. Pollak
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Characterization by line-shape analysis of photoreflectance spectra for modulation-doped strained quantum wells
Author(s): Godfrey Gumbs; Danghong Huang
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Investigation of doped multiple quantum well structures using modulation spectroscopy
Author(s): Rudiger Goldhahn; Gerhard Gobsch; J. Martyn Chamberlain; Mohamed Henini; Andrzej F. Jezierski; N. Stein; M. Trott; V. Nakov
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Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy
Author(s): Michael Gal; P. Kraisingdecha; Chit Shwe
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Photoreflectance study of the chemically modified (100) GaAs surface
Author(s): Orest J. Glembocki; Judah Ari Tuchman; K. K. Ko; Stella W. Pang; John A. Dagata; Adriana Giordana; R. Kaplan; Charles Ed Stutz
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Electronic optical properties of the condensed medium
Author(s): Nadezhda Pavlovna Netesova
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Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces
Author(s): Lutz Daeweritz; Richard Noetzel; Klaus H. Ploog
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Use of optical characterization for optimization of epitaxial growth
Author(s): Gary W. Wicks
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Characterization of very thin MBE-grown Ge epilayers on (001) Si
Author(s): Wolfgang Kissinger; Hans Joerg Osten; G. Lippert; Burghard Dietrich; Eberhard Bugiel
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Light emission properties of porous Si
Author(s): Sharka M. Prokes
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Optical characterization of light-emitting porous silicon
Author(s): Philippe M. Fauchet; Leonid Tsybeskov; Jury V. Vandyshev; A. Dubois; Chuan Peng
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Nonlinear optical phenomena in semiconductor lasers and amplifiers: physics and applications
Author(s): Wolfgang E. Elsaesser
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Correlation of optical, x-ray, and electron microscopy measurements on semiconductor multilayer structures
Author(s): David H. Christensen; Robert K. Hickernell; David T. Schaafsma; Joseph G. Pellegrino; Mark J. McCollum; James R. Hill; R. S. Rai
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Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields
Author(s): Udo Behn; Holger T. Grahn; Klaus H. Ploog
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Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain
Author(s): Hongen Shen; Michael Wraback; Jagadeesh Pamulapati; Monica Alba Taysing-Lara; Weimin Zhou; Mitra B. Dutta; Yu Cun Lu; Haochung Kuo
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Spectroscopic ellipsometry of undulated, bonded silicon-on-insulator structures with oxide-nitride-oxide layers
Author(s): Magdi Ezzat El-Ghazzawi; Tadashi Saitoh
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Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires
Author(s): Frank Kieseling; P. Ils; M. Michel; Alfred W. B. Forchel; I. Gyuro; M. Klenk; E. Zielinski
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