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PROCEEDINGS VOLUME 1361

Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Editor(s): Manijeh Razeghi

*This item is only available on the SPIE Digital Library.


Volume Details

Volume Number: 1361
Date Published: 1 March 1991

Table of Contents
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Real-time x-ray studies of semiconductor device structures
Author(s): Roy Clarke; Waldemar Dos Passos; Yi-Jen Chan; Dimitris Pavlidis; Walter P. Lowe; Brian G. Rodricks; Christine M. Brizard
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Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy
Author(s): Bruce A. Joyce; J. Zhang; C. Thomas Foxon; D. D. Vvedensky; T. Shitara; A. K. Myers-Beaghton
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Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs
Author(s): Maurice Quillec
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Radiative processes in quantum-confined structures
Author(s): James L. Merz; Per Olof Holtz
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Photoreflectance for the in-situ monitoring of semiconductor growth and processing
Author(s): Fred H. Pollak
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Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application
Author(s): Paul T. Greiling
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High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment
Author(s): Isamu Akasaki; Hideaki Amano
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Optoelectronic neuron
Author(s): Jacques I. Pankove; Christian V. Radehaus; Gustaaf Borghs
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Deep levels in III-V compounds, heterostructures, and superlattices
Author(s): Jacques C. Bourgoin; S. L. Feng; H. J. von Bardeleben
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In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements
Author(s): Bernard Drevillon; Manijeh Razeghi
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Microscopic origin of the shallow-deep transition of impurity levels in III-V and II-VI semiconductors
Author(s): D. J. Chadi
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Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy
Author(s): Kazuhiko Hirakawa; Y. Hashimoto; Toshiaki Ikoma
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Recent progress on research of materials for optoelectronic device applications in China
Author(s): Lianhui Chen; Mei-Ying Kong; Yi-Ming Wang
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Tunneling spectroscopy at nanometer scale in molecular beam epitaxy grown (Al)GaAs multilayers
Author(s): O. Albrektsen; Paul Koenraad; Huub W. Salemink
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Device concepts for SiGe optoelectronics
Author(s): Erich Kasper; Hartmut Presting
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Some new insights in the physics of quantum-well devices
Author(s): Raphael Tsu
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High-performance GaAs on silicon technology for VLSI, MMICs, and optical interconnects
Author(s): Aristos Christou
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Fabrication technology of strained layer heterostructure devices
Author(s): Marc Van Rossum
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Electro-optical effects in semiconductor superlattices
Author(s): Michel Voos; Paul H. Voisin
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Nonlinear optical properties of nipi and hetero nipi superlattices and their application for optoelectronics
Author(s): Gottfried H. Doehler
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Current trends and issues for low-damage dry etching of optoelectronic devices
Author(s): Evelyn L. Hu
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Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials
Author(s): Markus Pessa; T. Hakkarainen; Jari Keskinen; Keijo Rakennus; Arto K. Salokatve; Guodong Zhang; Harry M. Asonen
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Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry
Author(s): David E. Aspnes
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Novel narrow-gap semiconductor systems
Author(s): R. A. Stradling
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Bistable optical switching in GaAs multiple-quantum-well epitaxial etalons
Author(s): Jean-Louis Oudar; Bruno Sfez; Robert Kuszelewicz
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Electronic properties of mercury-based type-III superlattices
Author(s): Yves Guldner; J. Manasses
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Large-scale industrial application for excimer lasers: via-hole-drilling by photoablation
Author(s): Friedrich G. Bachmann
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MOVPE technology in device applications for telecommunication
Author(s): Rodney H. Moss
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Quantum wells and artificially structured materials for nonlinear optics
Author(s): James S. Harris Jr.; Martin M. Fejer
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Effects of TMSb/TEGa ratios on epilayer properties of gallium antimonide grown by low-pressure MOCVD
Author(s): Tong S. Wu; Yan-Kuin Su; Fuh Shyang Juang; N. Y. Li; K. J. Gan
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Time-resolved luminescence experiments on modulation n-doped GaAs quantum wells
Author(s): C. Lopez; Francisco Meseguer; Jose Sanchez-Dehesa; Wolfgang W. Ruehle; Klaus H. Ploog
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Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide
Author(s): Michel Pugnet; Jacques H. Collet; Laurent Nardo
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Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells
Author(s): Bernard Sermage; Jean Michel Gerard; Lorenzo Bergomi; Jean Yves Marzin
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Optical properties of molecular beam epitaxy grown ZnTe epilayers
Author(s): Gotthard Kudlek; Nazmir Presser; Juergen Gutowski; David L. Mathine; Masakazu Kobayashi; Robert L. Gunshor
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Silicon carbide layers produced by rapid thermal chemical vapor deposition
Author(s): F. H. Ruddell; D. McNeill; Brian Mervyn Armstrong; Harold S. Gamble
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Band structure and optical properties of silicon carbide
Author(s): Vladimir I. Gavrilenko; Sergey I. Frolov
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Luminescence molulation for the characterization of radiation damage within scintillator material
Author(s): Eberhard G. Bayer
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Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)
Author(s): Stefan Morley; Thomas Eickhoff; Dietrich R. T. Zahn; W. Richter; D. Woolf; David I. Westwood; R. H. Williams
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Emission of the 1.54um Er-related peaks by impact excitation of Er atoms in InP and its characteristics
Author(s): Hideo Isshiki; Hitoshi Kobayashi; Shigemi Yugo; Riichiro Saito; Tadamasa Kimura; Toshiaki Ikoma
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Raman scattering determination of nonpersistent optical control of electron density in a heterojunction
Author(s): David Robert Richards; Gerhard Fasol; Klaus H. Ploog
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Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers
Author(s): Ralf Peter Brinkmann; Karl H. Schoenbach; Hans-Joachim Schulz
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Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance
Author(s): Ulrich Menczigar; Michael J. Dahmen; Reinhard Zachai; K. Eberl; Gerhard Abstreiter
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Raman scattering characterization of direct gap Si/Ge superlattices
Author(s): Julian Darryn White; Michael A. Gell; Gerhard Fasol; C. J. Gibbings; C. G. Tuppen
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Study of properties of a-Si1-xGex:H prepared by SAP-CVD method
Author(s): Yi-Ming Wang; Lian-hua Jing; Da-wen Pang
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Molecular beam epitaxy/liquid phase epitaxy hybrid growth for GaAs-LED on Si
Author(s): Tetsuroh Minemura; Yuji Yazawa; J. Asano; T. Unno
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Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells
Author(s): Boris S. Elman; Emil S. Koteles; Paul Melman; Mark A. Rothman
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Growth and characterization of ZnSe and ZnTe grown on GaAs by hot-wall epitaxy
Author(s): Kurt Hingerl; Andreas Pesek; Helmut Sitter; Alois Krost; Dietrich R. T. Zahn; W. Richter; Gotthard Kudlek; Juergen Gutowski
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Heteroepitaxy of II-VI and IV-VI semiconductors on Si substrates
Author(s): Hans Zogg; A. N. Tiwari; Stefan Blunier; Clau Maissen; Jiri Masek
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Strained semiconductors and heterostructures: synthesis and applications
Author(s): Pallab Bhattacharya; Jasprit Singh
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Optical properties of InGaAs/InP strained quantum wells
Author(s): Richard A. Abram; Andrew C. G. Wood; D. J. Robbins
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Measurements of the InxGa1-xAs/GaAs critical layer thickness
Author(s): Thorvald G. Andersson; M. J. Ekenstedt; Vladimir D. Kulakovskii; S. M. Wang; J. Y. Yao
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Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives
Author(s): Miguel Recio; Ana Ruiz; Juan Melendez; Jose Maria Rodriguez; Gaspar Armelles; Maria Luisa Dotor; Fernando Briones
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Electronic properties of Si-doped nipi structures in GaAs
Author(s): C. Y. Fong; R. F. Gallup; Jeffrey S. Nelson
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Epitaxial growth of gallium arsenide from elemental arsenic
Author(s): Ting L. Chu; Shirley S. Chu; Richard F. Green; C. L. A. Cerny
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Application of epitaxial lift-off to optoelectronic material studies
Author(s): Garth L. Price; Brian F. Usher
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Reactive ion etching of InP and its optical assessment
Author(s): Roderick W. MacLeod; Cliva M. Sotomayor-Torres; Manijeh Razeghi; C. R. Stanley; Chris D. W. Wilkinson
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Microfabrication techniques for semiconductor lasers
Author(s): Takemasa Tamanuki; T. Tadokoro; Ken Morito; Fumio Koyama; Kenichi Iga
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Nonlinear optical properties of xanthone derivatives
Author(s): Yasuo Imanishi; Yuzo Itoh; Atsushi Kakuta; Akio Mukoh
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Linear and nonlinear optical properties of substituted pyrrolo[1,2-a]quinolines
Author(s): Niko F. van Hulst; Gerard J.T. Heesink; Bouwe Bolger; E. Kelderman; W. Verboom; David N. Reinhoudt
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New high-performance material in nonlinear optics field, the polymer blend PMMA-EVA: a first investigation
Author(s): Giuseppe Carbonara; Pasquale Mormile; Giancarlo Abbate; Umberto Bernini; Pasqualino Maddalena; Mario Malinconico
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Highest observed second harmonic intensity from a multilayered Langmuir-Blodgett film structure
Author(s): Geoffrey J. Ashwell; Emma J.C. Dawnay; Andrzej P. Kuczynski; Philip J. Martin
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Phase-matched second harmonic generations in poled dye-polymer waveguides
Author(s): Okihiro Sugihara; Takeshi Kinoshita; Mamoru Okabe; S. Kunioka; Y. Nonaka; Keisuke Sasaki
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Nonlinear optical properties of a fiber with an organic core crystal grown from solution
Author(s): Toshihiko Ohmi; Nobuo Yoshikawa; Koji Sakai; Tomoyuki Koike; Shinsuke Umegaki
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Multilayer InSb diodes grown by molecular beam epitaxy for near-ambient temperature operation
Author(s): Tim Ashley; A. B. Dean; Charles Thomas Elliott; M. R. Houlton; C. F. McConville; Howard A. Tarry; Colin R. Whitehouse
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Growth by liquid phase epitaxy and characterization of GaInAsSb and InAsSbP alloys for mid-infrared applications (2-3 um)
Author(s): Eric Tournie; J. L. Lazzari; Habib Mani; F. Pitard; Claude L. Alibert; Andre Francis Joullie
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Tunneling recombination of carriers at type-II interface in GaInAsSb-GaSb heterostructures
Author(s): A. N. Titkov; Yury P. Yakovlev; Alexej N. Baranov; V. N. Cheban
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Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications
Author(s): Maya P. Mikhailova; Alexej N. Baranov; Albert N. Imenkov; Yury P. Yakovlev
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Investigation of uniform deposition of GaInAsP quantum wells by MOCVD
Author(s): Norbert Puetz; Carla J. Miner; G. Hingston; Chris J. Moore; Brad Watt; Glen Hillier
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Photoluminescence and deep-level transient spectroscopy of DX-centers in selectively silicon-doped GaAs-AlAs superlattices
Author(s): Soraya Ababou; Taha Benyattou; Jean J. Marchand; Louis Mayet; Gerard Guillot; Francis Mollot; Richard Planel
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Phonons in PbTe and PbTe:Cr strained layers
Author(s): Mitra Ivanova Baleva; Maia Milcheva Momchilova
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Localization of hot spots in silicon devices with a laser scanning microscope
Author(s): Harald Bergner; A. Krause; Uwe Stamm
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Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition
Author(s): Georges E. Bremond; Hicham Said; Gerard Guillot; Jaafar Meddeb; M. Pitaval; Nasser Draidia; Rozette Azoulay
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Selectively grown InxGa1-xAs and InxGa1-xP structures: locally resolved stoichiometry determination by Raman spectroscopy
Author(s): Jean Geurts; Jo Finders; O. Kayser; Berhard Opitz; M. Maassen; R. Westphalen; P. Balk
Determination of electrostatic potentials and charge distributions in bulk and at interfaces by electron microscopy techniques
Author(s): B. Hugsted; K. Gjonnes; J. Tafto; Jon Gjonnes; H. Matsuhata
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High-conducting p+-InGaAs toplayers produced by simultaneous diffusion of Zn and Cd
Author(s): Bernd Gruska; P. Ambree; K. Wandel; U. Wielsch
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Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface
Author(s): Ryszard J. Iwanowski; Jakub J. Tatarkiewicz
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Optical characterization of InP epitaxial layers on different substrates
Author(s): Kaili L. Jiao; Jim P. Zheng; HoiSing Kwok; Wayne A. Anderson
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Frequency response study of traps in III-V compound semiconductors
Author(s): Zain Kachwalla
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Electronic structure of Ge(001) 2x1 by different angle-resolved photoemission techniques: EDC, CFS and CIS
Author(s): Lutz Kipp; Recardo Manzke; Michael Skibowski
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Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD
Author(s): O'Dae Kwon; Seung-Won Lee; Woong-Lim Choi; Kwang-Il Kim; Yoon-Ha Jeong
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Average energy gap of AIBIIIC2VI optoelectronic materials
Author(s): Virendra Kumar; Dinesh Chandra
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Density of localized states in glow-discharge a-Si1-x Cx:H
Author(s): Ozcan Oktu; Sandro Usala; Guy J. Adriaenssens; H. Tolunay; A. Eray
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Optical resonances of a semiconductor superlattice in parallel magnetic and electric fields
Author(s): Monica Pacheco; Zdenka Barticevic; Francisco Claro
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Growth and characterization of semiconducting Fe-Si2 thin layers on Si(111)
Author(s): Angela Rizzi; Heiko D. Moritz; Hans Luth
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Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials
Author(s): Hans-Joachim Schulz; Karl H. Schoenbach; B. M. Kimpel; Ralf Peter Brinkmann
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Exciton-polariton photoluminescence in ultrapure GaAs
Author(s): Yuri V. Zhilyaev; Victor V. Rossin; Tatiana V. Rossin; V. V. Travnikov
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Energy levels of GaAs/A1xGa1-xAs double-barrier quantum wells
Author(s): Yong Chen; Gerard Neu; C. Deparis; J. Massies
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Cyclotron resonance and photoluminescence in GaAs in a microwave field
Author(s): B. M. Ashkinadze; Vassilij V. Bel'kov; A. G. Krasinskaya
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Measurement of the sizes of the semiconductor crystallites in colored glasses through neutron scattering
Author(s): Gian Piero Banfi; Vittorio Degiorgio; A. R. Rennie; Giancarlo C. Righini
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Diffusion and solubility of ion-implanted Nd and Er in LiNbO3
Author(s): Christoph Buchal; S. Mohr
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Study of GaAs/AlGaAs quantum-well structures grown by MOVPE using tertiarybutylarsine
Author(s): Hyung G. Lee; HyungJun Kim; S. H. Park; Dietrich W. Langer
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Exciton spectroscopy of semiconductor materials used in laser elements
Author(s): Alexander S. Nasibov; L. S. Markov; D. L. Fedorov; P. V. Shapkin; Y. V. Korostelin; G. A. Machintsev
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Anisotropic electrical and optical behavior and preferential orientation in early transition metal tellurides thin films
Author(s): Yves Mathey; Daniel Pailharey; Mireille Gerri; Anne-Marie Bonnot; J. P. Sorbier
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Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers
Author(s): M. Tischel; M. Rosenzweig; Axel Hoffmann; Herbert Venghaus; F. Fidorra
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Hot electron instabilities and light emission in GaAs quantum wells
Author(s): Naci Balkan; Brian K. Ridley
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Interaction of hydrogen at InP(100) surfaces before and after ion bombardment
Author(s): Thomas Allinger; V. Persch; Juergen Alois Schaefer; Y. Meng; H. De; J. Anderson; G. J. Lapeyre
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Electrical and optical properties of As- and Li-doped ZnSe films
Author(s): Kurt Hingerl; Jarmo Lilja; Mika Toivonen; Markus Pessa; Wolfgang Jantsch; Donat Josef As; W. Rothemund; P. Juza; Helmut Sitter
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Atomic scale simulation of the growth of CdTe layers on GaAs
Author(s): Mehdi Djafari Rouhani; M. Laroussi; A. M. Gue; Daniel Esteve
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Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate
Author(s): Joerg Soellner; Michael Heuken; Klaus Heime
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Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy
Author(s): Henri Banvillet; E. Gil-Lafon; A. M. Vasson; R. Cadoret; A. Tabata; Taha Benyattou; Gerard Guillot
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Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD
Author(s): Weihua Zhuang; Chaoyang Chen; Da Teng; Jinzhong Yu; Yuzhang Li
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Novel optoelectronic devices and integrated circuits using epitaxial lift-off
Author(s): Piet M. A. Demeester; Ivan K.A. Pollentier; Luc Buydens; Peter Van Daele
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Behavior of amorphous semiconductors As2S3 layers after photon, electron, or x-ray exposures
Author(s): Peter Guttmann; Gentsho V. Danev; Erintche M. Spassova; Sergey V. Babin
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Near-UV laser ablation of doped polymers
Author(s): Juergen Ihlemann; Matthias Bolle; Klaus Luther; Juergen Troe
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Heteroepitaxial growth of InP and GaInAs on GaAs substrates using nonhydride sources
Author(s): Shirley S. Chu; Ting L. Chu; C. H. Yoo; G. L. Smith
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Oxide removal from GaAs(100) by atomic hydrogen
Author(s): Juergen Alois Schaefer; V. Persch; S. Stock; Thomas Allinger; A. Goldmann
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High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition
Author(s): Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Yen-Ming Pang; Sheng-Jehn Yang
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Characterization of PMMA-EVA blend via photoacoustic technique
Author(s): Giuseppe Carbonara; Pasquale Mormile; Umberto Bernini; Paolo Russo; Mario Malinconico; M. G. Volpe
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Theoretical study of the fifth harmonic generation in organic liquids
Author(s): Ion M. Popescu; Niculae N. Puscas; Paul E. Sterian; Dorin I. Irimescu; Adrian Gh. Podoleanu
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Semiempirical method for calculation of dynamic susceptibilities
Author(s): Erik Norby Svendsen; T. Stroyer-Hansen
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Fabrication of high-radiance LEDs by epitaxial lift-off
Author(s): Ivan K.A. Pollentier; Ann Ackaert; Peter M. De Dobbelaere; Luc Buydens; Peter Van Daele; Piet M. A. Demeester
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Stabilization of CdxHg1-xTe heterointerfaces
Author(s): Paul A. Clifton; Paul D. Brown
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Spectrum of surface electromagnetic waves in CdxHg1-xTe crystals at 0.3 K < T < 77 K
Author(s): Alexey A. Vertiy; Nikolai N. Beletskii; I. N. Gorbatyuk; I. V. Ivanchenko; Nina A. Popenko; Ilary M. Rarenko; Sergey I. Tarapov
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Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range
Author(s): Hans Zogg; Jiri Masek; Clau Maissen; Taizo J. Hoshino; Stefan Blunier; A. N. Tiwari
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Photovoltaic HgCdTe MWIR-detector arrays on (100)CdZnTe/(100)GaAs grown by hot-wall-beam epitaxy
Author(s): Karl-Heinz Gresslehner; W. Schirz; Josef Humenberger; Helmut Sitter; J. Andorfer; Klaus Lischka
Far-IR emission spectroscopy on electron-beam-irradiated A1GaAs/GaAs heterostructures
Author(s): Edgar Diessel; Hans Sigg; Klaus von Klitzing
Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects
Author(s): Paul Panayotatos; Alexandros Georgakilas; Jean-Loic Mourrain; Aristos Christou
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Study of structural imperfections in epitaxial beta-SiC layers by method of x-ray differential diffractometry
Author(s): Igor M. Baranov; R. N. Kutt; Irina P. Nikitina
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Developments in precursors for II-VI semiconductors
Author(s): John Brian Mullin; D. J. Cole-Hamilton; A. E. D. McQueen; J. E. Hails
Semiconductor-doped glass as a nonlinear material
Author(s): Burkhard Speit; K. E. Remitz; Norbert N. Neuroth
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Shadow masked growth for the fabrication of photonic integrated circuits
Author(s): Piet M. A. Demeester; Ingrid Moerman; Youcai Zhu; Peter Van Daele; J. Thomson
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Resonant tunneling in microcrystalline silicon quantum box diode
Author(s): Raphael Tsu; Qui-Yi Ye; Edward H. Nicollian
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Observation of tunneling emission from a single-quantum-well using deep-level transient spectroscopy
Author(s): Xavier Letartre; Didier Stievenard
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Reflectance anisotropy spectrometer for real-time crystal growth investigations
Author(s): O. Acher; Ramdane Benferhat; Bernard Drevillon; Manijeh Razeghi
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Loss of heat relaxation in superconducting materials near Tc
Author(s): Tatiana Timofeevna Ermolaeva; S. E. Emelin
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Loss of heat relaxation in the superconducting and nonsuperconducting ceramics near Tc
Author(s): Tatiana Timofeevna Ermolaeva
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