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PROCEEDINGS VOLUME 10143

Extreme Ultraviolet (EUV) Lithography VIII
Editor(s): Eric M. Panning
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 10143
Date Published: 18 May 2017

Table of Contents
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Front Matter: Volume 10143
Author(s): Proceedings of SPIE
Progress in EUV lithography toward manufacturing
Author(s): Seong-Sue Kim; Roman Chalykh; Hoyeon Kim; Seungkoo Lee; Changmin Park; Myungsoo Hwang; Joo-On Park; Jinhong Park; Hocheol Kim; Jinho Jeon; Insung Kim; Donggun Lee; Jihoon Na; Jungyeop Kim; Siyong Lee; Hyunwoo Kim; Seok-Woo Nam
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Antimony photoresists for EUV lithography: mechanistic studies
Author(s): Michael Murphy; Amrit Narasimhan; Steven Grzeskowiak; Jacob Sitterly; Philip Schuler; Jeff Richards; Greg Denbeaux; Robert L. Brainard
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Nanoparticle photoresist studies for EUV lithography
Author(s): Kazuki Kasahara; Hong Xu; Vasiliki Kosma; Jeremy Odent; Emmanuel P. Giannelis; Christopher K. Ober
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Advanced development techniques for metal-based EUV resists
Author(s): Jodi Hotalen; Michael Murphy; William Earley; Michaela Vockenhuber; Yasin Ekinci; Daniel A. Freedman; Robert L. Brainard
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Absorption coefficient and exposure kinetics of photoresists at EUV
Author(s): Roberto Fallica; Jarich Haitjema; Lianjia Wu; Sonia Castellanos; Fred Brouwer; Yasin Ekinci
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Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration
Author(s): Yudhishthir Kandel; Jonathan Chandonait; Lawrence S. Melvin III; Sajan Marokkey; Qiliang Yan; Steven Grzeskowiak; Benjamin Painter; Gregory Denbeaux
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Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner
Author(s): Mark van de Kerkhof; Hans Jasper; Leon Levasier; Rudy Peeters; Roderik van Es; Jan-Willem Bosker; Alexander Zdravkov; Egbert Lenderink; Fabrizio Evangelista; Par Broman; Bartosz Bilski; Thorsten Last
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Line-edge roughness performance targets for EUV lithography
Author(s): Timothy A. Brunner; Xuemei Chen; Allen Gabor; Craig Higgins; Lei Sun; Chris A. Mack
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Mix-and-match considerations for EUV insertion in N7 HVM
Author(s): Xuemei Chen; Allen Gabor; Pavan Samudrala; Sheldon Meyers; Erik Hosler; Richard Johnson; Nelson Felix
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The future of EUV lithography: enabling Moore's Law in the next decade
Author(s): Alberto Pirati; Jan van Schoot; Kars Troost; Rob van Ballegoij; Peter Krabbendam; Judon Stoeldraijer; Erik Loopstra; Jos Benschop; Jo Finders; Hans Meiling; Eelco van Setten; Niclas Mika; Jeannot Dredonx; Uwe Stamm; Bernhard Kneer; Bernd Thuering; Winfried Kaiser; Tilmann Heil; Sascha Migura
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SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
Author(s): Joost Bekaert; Paolo Di Lorenzo; Ming Mao; Stefan Decoster; Stéphane Larivière; Joern-Holger Franke; Victor M. Blanco Carballo; Bogumila Kutrzeba Kotowska; Frederic Lazzarino; Emily Gallagher; Eric Hendrickx; Philippe Leray; R. Ryoung-han Kim; Greg McIntyre; Paul Colsters; Friso Wittebrood; Joep van Dijk; Mark Maslow; Vadim Timoshkov; Ton Kiers
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Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance
Author(s): Weimin Gao; Victor Blanco; Vicky Philipsen; Itaru Kamohara; Yves Saad; Ivan Ciofi; Lawrence S. Melvin III; Eric Hendrickx; Vincent Wiaux; Ryoung Han Kim
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Actinic review of EUV masks: performance data and status of the AIMS EUV system
Author(s): Dirk Hellweg; Markus Koch; Sascha Perlitz; Martin Dietzel; Renzo Capelli
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Printability and actinic AIMS review of programmed mask blank defects
Author(s): Erik Verduijn; Pawitter Mangat; Obert Wood; Jed Rankin; Yulu Chen; Francis Goodwin; Renzo Capelli; Sascha Perlitz; Dirk Hellweg; Ravi Bonam; Shravan Matham; Nelson Felix; Daniel Corliss
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Novel membrane solutions for the EUV pellicle: better or not?
Author(s): Ivan Pollentier; Jae Uk Lee; Marina Timmermans; Christoph Adelmann; Houman Zahedmanesh; Cedric Huyghebaert; Emily E. Gallagher
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Impact of tool design on defect detection sensitivity for EUV actinic blank inspection
Author(s): Yow-Gwo Wang; Andy Neureuther; Patrick Naulleau
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High-NA metrology and sensing on Berkeley MET5
Author(s): Ryan Miyakawa; Chris Anderson; Patrick Naulleau
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Investigating surface structures by EUV scattering
Author(s): Victor Soltwisch; Christian Laubis; Analía Fernández Herrero; Mika Pflüger; Anton Haase; Frank Scholze
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Improvements in resist performance towards EUV HVM
Author(s): Oktay Yildirim ; Elizabeth Buitrago; Rik Hoefnagels; Marieke Meeuwissen; Sander Wuister; Gijsbert Rispens; Anton van Oosten; Paul Derks; Jo Finders; Michaela Vockenhuber; Yasin Ekinci
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Exploring the readiness of EUV photo materials for patterning advanced technology nodes
Author(s): Danilo De Simone; Yannick Vesters; Atif Shehzad; Geert Vandenberghe; Philippe Foubert; Christophe Beral; Dieter Van Den Heuvel; Ming Mao; Fred Lazzarino
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State-of-the-art EUV materials and processes for the 7nm node and beyond
Author(s): Elizabeth Buitrago; Marieke Meeuwissen; Oktay Yildirim; Rolf Custers; Rik Hoefnagels; Gijsbert Rispens; Michaela Vockenhuber; Iacopo Mochi; Roberto Fallica; Zuhal Tasdemir; Yasin Ekinci
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High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL
Author(s): Safak Sayan; Pieter Vanelderen; Iulian Hetel; BT Chan; Praveen Raghavan; Victor Blanco; Philippe Foubert; Lucia D'urzo; Danilo De Simone; Geert Vandenberghe
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Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography
Author(s): Carmen Popescu; Andreas Frommhold; Alexandra McClelland; John Roth; Yasin Ekinci; Alex P. G. Robinson
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Mechanisms of EUV exposure: electrons and holes
Author(s): Amrit Narasimhan; Steven Grzeskowiak; Christian Ackerman; Tracy Flynn; Greg Denbeaux; Robert L. Brainard
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Novel EUV photoresist for sub-7nm node (Conference Presentation)
Author(s): Tsuyoshi Furukawa; Takehiko Naruoka; Hisashi Nakagawa; Hiromu Miyata; Motohiro Shiratani; Masafumi Hori; Satoshi Dei; Ramakrishnan Ayothi; Yoshi Hishiro; Tomoki Nagai
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Driving down defect density in composite EUV patterning film stacks
Author(s): Luciana Meli; Karen Petrillo; Anuja De Silva; John Arnold; Nelson Felix; Richard Johnson; Cody Murray; Alex Hubbard; Danielle Durrant; Koichi Hontake; Lior Huli; Corey Lemley; Dave Hetzer; Shinichiro Kawakami; Koichi Matsunaga
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Lithographic stochastics: Beyond 3sigma
Author(s): Robert L. Bristol; Marie E. Krysak
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Reducing EUV mask 3D effects by alternative metal absorbers
Author(s): Vicky Philipsen; Kim Vu Luong; Laurent Souriau; Eric Hendrickx; Andreas Erdmann; Dongbo Xu; Peter Evanschitzky; Robbert W. E. van de Kruijs; Arash Edrisi; Frank Scholze; Christian Laubis; Mathias Irmscher; Sandra Naasz; Christian Reuter
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N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature's primary and 1st self-image
Author(s): T. Last; P. van Adrichem; L. de Winter; S. Hsu; J. Finders; F. Wittebrood; M. van de Kerkhof
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Investigation of alternate mask absorbers in EUV lithography
Author(s): Martin Burkhardt
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Vote-taking for EUV lithography: a radical approach to mitigate mask defects
Author(s): Timothy A. Brunner; Melih Ozlem; Geng Han; Jed Rankin; Obert Wood; Erik Verduijn
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Reticle enhancement techniques toward iN7 metal2
Author(s): W. Gillijns; L. E. Tan; Y. Drissi; V. Blanco; D. Trivkovic; R. H. Kim; E. Gallagher; G. McIntyre
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Considerations for pattern placement error correction toward 5nm node
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato; Kyohei Koike; Mark John Maslow; Vadim Timoshkov; Ton Kiers; Paolo Di Lorenzo; Carlos Fonseca
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Enabling full field physics based OPC via dynamic model generation
Author(s): Michael Lam; Chris Clifford; Ananthan Raghunathan; Germain Fenger; Kostas Adam
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Rigorous 3D electromagnetic simulation of ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask
Author(s): Stuart Sherwin; Thomas V. Pistor; Andrew Neureuther; Patrick Naulleau
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Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform
Author(s): V. M. Blanco Carballo; J. Bekaert; M. Mao; B. Kutrzeba Kotowska; S. Larivière; I. Ciofi; R. Baert; R. H. Kim; E. Gallagher; E. Hendrickx; L. E. Tan; W. Gillijns; D. Trivkovic; P. Leray; S. Halder; M. Gallagher; F. Lazzarino; S. Paolillo; D. Wan; A. Mallik; Y. Sherazi; G. McIntyre; M. Dusa; P. Rusu; T. Hollink; T. Fliervoet; F. Wittebrood
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Integrated approach to improving local CD uniformity in EUV patterning
Author(s): Andrew Liang; Jan Hermans; Timothy Tran; Katja Viatkina; Chen-Wei Liang; Brandon Ward; Steven Chuang; Jengyi Yu; Greg Harm; Jelle Vandereyken; David Rio; Michael Kubis; Samantha Tan; Mircea Dusa; Akhil Singhal; Bart van Schravendijk; Girish Dixit; Nader Shamma; Rich Wise; Sirish Reddy
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Comprehensive analysis of line-edge and line-width roughness for EUV lithography
Author(s): Ravi Bonam; Chi-Chun Liu; Mary Breton; Stuart Sieg; Indira Seshadri; Nicole Saulnier; Jeffrey Shearer; Raja Muthinti; Raghuveer Patlolla; Huai Huang
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Study on restricting factors of practical k1 limit in 0.33NA EUV lithography
Author(s): Sunyoung Koo; Mijung Lim; Inhwan Lee; Sarohan Park; Jinwoo Choi; Yoonsuk Hyun; Chang-Moon Lim
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New methodologies for lower-K1 EUV OPC and RET optimization
Author(s): Kevin Hooker; Aram Kazarian; Xibin Zhou; Josh Tuttle; Guangming Xiao; Yunqiang Zhang; Kevin Lucas
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Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer
Author(s): Indira Seshadri; Anuja De Silva; Luciana Meli; Charlie Liu; Cheng Chi; Jing Guo; Kristin Schmidt; Hoa Truang; John C. Arnold; Nelson Felix; Lovejeet Singh; Tsuyoshi Furukawa; Ramakrishnan Ayothi; Angelique Raley; Richard Farrell
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Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer
Author(s): Adam Lyons; David Rio; Sook Lee; Thomas Wallow; Maxence Delorme; Anita Fumar-Pici; Michael Kocsis; Peter de Schepper; Michael Greer; Jason K. Stowers; Werner Gillijns; Danilo De Simone; Joost Bekaert
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Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production
Author(s): Xuemei Chen; Christina Turley; Jed Rankin; Tim Brunner; Allen Gabor
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Single-expose patterning development for EUV lithography
Author(s): Anuja De Silva; Karen Petrillo; Luciana Meli; Jeffrey C. Shearer; Genevieve Beique; Lei Sun; Indira Seshadri; Taehwan Oh; Seulgi Han; Nicole Saulnier; Joe Lee; John C. Arnold; Bassem Hamieh; Nelson M. Felix; Tsuyoshi Furukawa; Lovejeet Singh; Ramakrishnan Ayothi
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Single-nm resolution approach by applying DDRP and DDRM
Author(s): Wataru Shibayama; Shuhei Shigaki; Satoshi Takeda; Makoto Nakajima; Rikimaru Sakamoto
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Scaling LPP EUV sources to meet high volume manufacturing requirements (Conference Presentation)
Author(s): Alexander A. Schafgans; Daniel J. Brown; Igor V. Fomenkov; Yezheng Tao; Michael Purvis; Slava I. Rokitski; Georgiy O. Vaschenko; Robert J. Rafac; David C. Brandt
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Performance of 250W high-power HVM LPP-EUV source
Author(s): Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Krzysztof M. Nowak; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Tatsuya Yanagida; Tsuyoshi Yamada; Taku Yamazaki; Shinji Okazaki; Takashi Saitou
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High-radiance LDP source for mask inspection and beam line applications (Conference Presentation)
Author(s): Yusuke Teramoto; Bárbara Santos; Guido Mertens; Ralf Kops; Margarete Kops; Alexander von Wezyk; Klaus Bergmann; Hironobu Yabuta; Akihisa Nagano; Noritaka Ashizawa; Yuta Taniguchi; Daiki Yamatani; Takahiro Shirai; Kunihiko Kasama
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Free-electron laser emission architecture impact on EUV lithography
Author(s): Erik R. Hosler; Obert R. Wood II; William A. Barletta
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First light at EBL2
Author(s): Norbert Koster; Edwin te Sligte; Freek Molkenboer; Alex Deutz; Peter van der Walle; Pim Muilwijk; Wouter Mulckhuyse; Bastiaan Oostdijck; Christiaan Hollemans; Björn Nijland; Peter Kerkhof; Michel van Putten; Jeroen Westerhout
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RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
Author(s): Iacopo Mochi; Patrick Helfenstein; Istvan Mohacsi; Rajeev Rajendran; Shusuke Yoshitake; Yasin Ekinci
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Arc-shaped slit effect of EUV lithography with anamorphic high-NA system in terms of critical dimension variation
Author(s): In-Seon Kim; Guk-Jin Kim; Michael Yeung; Eytan Barouch; Hye-Keun Oh
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A two-step method for fast and reliable EUV mask metrology
Author(s): Patrick Helfenstein; Iacopo Mochi; Rajeev Rajendran; Shusuke Yoshitake; Yasin Ekinci
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Monte Carlo sensitivity analysis of EUV mask reflectivity and its impact on OPC accuracy
Author(s): Yulu Chen; Obert Wood; Jed Rankin; Eric Gullikson; Julia Meyer-Ilse; Lei Sun; Zhengqing John Qi; Francis Goodwin; Jongwook Kye
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A study on EUV reticle surface molecular contamination under different storage conditions in a HVM foundry fab
Author(s): SherJang Singh; Brett Yatzor; Ron Taylor; Obert Wood; Pawitter Mangat
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CD error caused by aberration and its possible compensation by optical proximity correction in extreme-ultraviolet lithography
Author(s): Jeong-Gu Hwang; In-Seon Kim; Guk-Jin Kim; Hee-Ra No; Byung-Hun Kim; Hye-Keun Oh
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Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography
Author(s): Guk-Jin Kim; In-Seon Kim; Michael Yeung; Min-Su Kim; Jin-Goo Park; Hye-Keun Oh
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Image-based pupil plane characterization for anamorphic lithography systems
Author(s): Zac Levinson; Bruce W. Smith
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Recent development status of rinse material for EUV lithography
Author(s): Kazuma Yamamoto; Maki Ishii; Tomoyasu Yashima; Tatsuro Nagahara
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Contribution of EUV mask CD variability on LCDU
Author(s): Zhengqing John Qi; Jed Rankin; Lei Sun; Harry Levinson
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EUV process improvement with novel litho track hardware
Author(s): Harold Stokes; Masahiko Harumoto; Yuji Tanaka; Koji Kaneyama; Charles Pieczulewski; Masaya Asai
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Impact of EUV SRAF on Bossung tilt
Author(s): Yow-Gwo Wang; Stephen Hsu; Robert Socha; Andy Neureuther; Patrick Naulleau
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2D self-aligned via patterning strategy with EUV single-exposure in 3nm technology
Author(s): Suhyeong Choi; Jae Uk Lee; Victor M. Blanco Carballo; Ryoung-Han Kim; Youngsoo Shin
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A study on enhancing EUV resist sensitivity
Author(s): Atsushi Sekiguchi; Tetsuo Harada; Takeo Watanabe
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Impact of acid statistics on EUV local critical dimension uniformity
Author(s): Jing Jiang; Danilo De Simone; Oktay Yildirim ; Marieke Meeuwissen; Rik Hoefnagels; Gijsbert Rispens; Paul Derks; Rolf Custers
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Influence of post exposure bake time on EUV photoresist RLS trade-off
Author(s): Yannick Vesters; Danilo De Simone; Stefan De Gendt
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Extreme ultraviolet patterning of tin-oxo cages
Author(s): Jarich Haitjema; Yu Zhang; Michaela Vockenhuber; Dimitrios Kazazis; Yasin Ekinci; Albert M. Brouwer
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Technology for defectivity improvement in resist coating and developing process in EUV lithography process
Author(s): Yuya Kamei; Takahiro Shiozawa; Shinichiro Kawakami; Hideo Shite; Hiroshi Ichinomiya; Masashi Enomoto; Kathleen Nafus; Marc Demand; Philippe Foubert
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In-situ measurement of outgassing generated from EUV resist including metal oxide nanoparticles during electron irradiation
Author(s): Seiji Takahashi; Yoichi Minami; Mikio Kadoi; Yoko Matsumoto; Atsushi Sekiguchi; Takeo Watanabe
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Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness
Author(s): Warren Montgomery; Alexandra McClelland; David Ure; John Roth; Alex P. G. Robinson
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Simulation and experimentation of PSCAR chemistry for complex structures
Author(s): Michael Carcasi; Seiji Nagahara; Gosuke Shiraishi; Tomohiro Iseki; Yukie Minekawa; Kosuke Yoshihara; Hisashi Nakagawa; Takehiko Naruoka; Tomoki Nagai; Akihiro Oshima; Seiichi Tagawa
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Optimization of stochastic EUV resist models parameters to mitigate line edge roughness
Author(s): John J. Biafore; Azat Latypov; Anindarupa Chunder; Andy Brendler; Todd Bailey; Harry J. Levinson
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Contrast curves for low energy electron exposures of an EUV resist in a scanning electron microscope
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Computational approach on PEB process in EUV resist: multi-scale simulation
Author(s): Muyoung Kim; Junghwan Moon; Joonmyung Choi; Byunghoon Lee; Changyoung Jeong; Heebom Kim; Maenghyo Cho
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Key components technology update of the 250W high-power LPP-EUV light source
Author(s): Yasufumi Kawasuji; Krzysztof M. Nowak; Tsukasa Hori; Takeshi Okamoto; Hiroshi Tanaka; Yukio Watanabe; Tamotsu Abe; Takeshi Kodama; Hiroaki Nakarai; Taku Yamazaki; Shinji Okazaki; Takashi Saitou; Hakaru Mizoguchi; Yutaka Shiraishi
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Study of Sn removal by surface wave plasma for source cleaning
Author(s): Gianluca Panici; Dren Qerimi; David N. Ruzic
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Background pressure effects on EUV source efficiency and produced debris characteristics
Author(s): Tatyana Sizyuk
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Improvement of power, efficiency, and cost of ownership in the tin LPP EUV source
Author(s): Malcolm W. McGeoch
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