This PDF file contains the front matter associated with SPIE Proceedings Volume 10107, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and Conference Committee listing.

Waveguides structured at the subwavelength scale frustrate diffraction and behave as optical metamaterials with controllable refractive index. These structures have found widespread applications in silicon photonics, ranging from sub-decibel efficiency fibre-chip couplers to spectrometers and polarization rotators. Here, we briey describe the design foundations for sub-wavelength waveguide devices, both in terms of analytic effective medium approximations, as well as through rigorous Floch-Bloquet mode simulation. We then focus on two novel structures that exemplify the use of subwavelength waveguides: mid-infrared waveguides and ultra-broadband beamsplitters.

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

A novel approach that enables long range hybrid plasmonic modes to be supported in asymmetric structures will be discussed. Examining the modal behavior of an asymmetric hybrid plasmonic waveguide (AHPW) reveals that field symmetry on either side of the metal is the only necessary condition for plasmonic structures to support long range propagation. In this talk we shall demonstrate that this field symmetry condition can be satisfied irrespective of asymmetry in waveguide structure, material, or even field profile. The versatility in the choice of parameters allows for long range hybrid plasmonic modes to be achieved in generic structures. Altering the existing limitations of these performance metrics (mode area and propagation losses) can have significant implications on the designs of active devices. As illustrative example, the utility of these waveguide designs is demonstrated when combined with novel material such as ITO to realize optoelectronic components such as filters, modulators and switches with record footprint, performance and insertion losses.

We present a novel nanoscale transfer printing (TP) technology which combines a customized nanolithography system with bespoke elastomeric μ-stamps to controllably pick and place diverse semiconductor structures, e.g. nanowires (NWs), Light Emitting Diodes (LEDs) and thin films, onto targeted locations on heterogeneous material surfaces (e.g. polymers, metals, silica, diamond). Notably, our technique allows the parallel printing of semiconductor structures of different materials onto a large area (of 10cm x 10cm) whilst simultaneously yielding sub-micrometric positioning control (down to below 100nm) and low printing time (~20s per print step). In the talk, we will present a variety of hybrid integrated devices fabricated with our TP technique. Emphasis will be given to our recent work using Gallium Nitride (GaN) LEDs and Indium Phosphide (InP) NW lasers as building blocks. Using TP protocols, GaN LEDs fabricated from GaN-on-Si have been integrated onto polymer and thin glass surfaces and onto diamond substrates for mechanically flexible optoelectronic devices and effective device heat management respectively. Additionally, ultra-small InP NW lasers (~5μm long and ~500nm diameter) have been integrated onto multiple heterogeneous substrates, including mechanically flexible (polymers), transparent (silica) and metallic (gold) surfaces. Furthermore, complex spatial patterns with micrometric dimensions have been defined with these nanolasers acting as localised emitters. Finally, we will also introduce our very recent results demonstrating the coupling of InP NW lasers with planar waveguide technology as a back-end hybrid integration technique.

We present our versatile simulation framework for the schematic-driven and layout-aware design of photonic integrated circuits (PICs) realizing a fast and user-friendly design flow for large-scale PICs comprising passive and active building blocks (BBs). We show how the seamless interaction of circuit simulation with photonic layout design tools allows to specify and utilize directly physical locations and orientations of BBs of standardized process design kits (PDKs). We demonstrate how to combine graphical schematic capture and automated waveguide routing, and discuss by means of typical design applications how an optimized design flow can speed-up the virtual prototyping of complex PICs and optoelectronic applications.

In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

Diatoms are microalgae found in every habitat where water is present. They produce 40% of the ocean’s yearly production of organic carbon and 20% of the oxygen that we breathe. Their abundance and wide distribution make them ideal materials for a wide range of applications as living organisms. In our previous work, we have demonstrated that diatom biosilica with self-assembled silver nanoparticles (Ag NPs) can be used as ultra-sensitive, low-cost substrates for surface-enhanced Raman scattering (SERS) sensing. The enhancement comes from the photonic crystal enhancement of diatom frustules that could improve the hot-spots of Ag NPs. In this work, we report the unique micro-fluidic flow, analyte concentration effect, and thin layer chromatography (TLC) on diatom biosilica, which enables selection, separation, detection, and analysis of complex chemical and biological samples. Particularly, we show that the microscopic fluidic flow induced by the evaporation of liquid droplet can concentrate the analyte and achieve label-free sensing of single molecule detection of R6G and label-free sensing of 4.5×10-17g trinitrotoluene (TNT) from only 200 nano-liter solution. We also demonstrated a facile method for instant on-site separation and detection of analytes by TLC in tandem with SERS spectroscopy using high density diatom thin film. This lab-on-chip technology has been successfully applied for label-free detection of polycyclic aromatic hydrocarbons from human plasma and histamine from salmon fish. Our research suggests that such cost-effective, multi-functional photonic crystal sensors enabled by diatom biosilica opens a new route for lab-on-chip systems and possess significant engineering potentials for chemical and biological sensing.

The proof of concept for a photonic cavity sensor for oil, water and gas detection is reported. The optical design employs an optimized photonic crystal cavity with fluidic infiltration of gas, water or (reservoir) oils. The 3D design and simulation is discussed, followed by the nanofabrication in standard silicon on insulator wafers (SoI). Using an optofluidic cicuit with PDMS channels, the fluid flow to the photonic cavity is controlled with syringe pumps. The variations in dielectric value (refractive index) change with the involved media result in a shift of the cavity resonant wavelength. For fluid change from water to typical oil (refractive index difference of 0.12), we report a wavelenght shift of up to 12 nm at the measurement wavelength of 1550 nm, in very good agreement with the simulations. We follow the optical response at a fixed wavelength, when feeding alternate flows or bubbles of oil/water through the optofluidic chip, and observe the flow pattern on camera. Finally we discuss the outlook and antifouling of the sensor with a special design. This work is supported by Shell Global Solutions. Appl.Phys.Lett., 106, 031116 (2015) J.Lightw.Technol., 33, 3672 (2015)

Monolithic integration of nanophotonic sensors with CMOS detectors can transform the laboratory based nanophotonic sensors into practical devices with a range of applications in everyday life. In this work, by monolithically integrating an array of gold nanodiscs with the CMOS photodiode we have developed a compact and miniaturized nanophotonic sensor system having direct electrical read out. Doing so eliminates the need of expensive and bulky laboratory based optical spectrum analyzers used currently for measurements of nanophotonic sensor chips. The experimental optical sensitivity of the gold nanodiscs is measured to be 275 nm/RIU which translates to an electrical sensitivity of 5.4 V/RIU. This integration of nanophotonic sensors with the CMOS electronics has the potential to revolutionize personalized medical diagnostics similar to the way in which the CMOS technology has revolutionized the electronics industry.

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

Over the last few years, significant progresses have been made on photonic crystal based surface-emitting lasers on silicon. Both membrane-reflector VCSELs (MR-VCSELs) and bandedge effect based PCSELs have been reported with silicon based photonic crystal cavities and hybrid integrated compound semiconductor gain materials. In this talk, we will report recent advances in these laser structures. Lasing characteristics will be reported considering different coupling efficiencies for both low and room temperature operations. The lateral cavity size effect will also be discussed in making low threshold lasers with small cavity sizes. Finally the integration of other coupling structures will be discussed for beam routing in-plane. Work is supported by ARO, AFOSR, and NSF.

Current communication networks needs to keep up with the exponential growth of today’s internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 m. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.

Advances in integrated silicon photonics are enabling highly connected sensor networks that offer sensitivity, selectivity and pattern recognition. Cost, performance and the evolution path of the so-called ‘Internet of Things’ will gate the proliferation of these networks. The wavelength spectral range of 3-8um, commonly known as the mid-IR, is critical to specificity for sensors that identify materials by detection of local vibrational modes, reflectivity and thermal emission. For ubiquitous sensing applications in this regime, the sensors must move from premium to commodity level manufacturing volumes and cost. Scaling performance/cost is critically dependent on establishing a minimum set of platform attributes for point, wearable, and physical sensing. Optical sensors are ideal for non-invasive applications. Optical sensor device physics involves evanescent or intra-cavity structures for applied to concentration, interrogation and photo-catalysis functions. The ultimate utility of a platform is dependent on sample delivery/presentation modalities; system reset, recalibration and maintenance capabilities; and sensitivity and selectivity performance. The attributes and performance of a unified Glass-on-Silicon platform has shown good prospects for heterogeneous integration on materials and devices using a low cost process flow. Integrated, single mode, silicon photonic platforms offer significant performance and cost advantages, but they require discovery and qualification of new materials and process integration schemes for the mid-IR. Waveguide integrated light sources based on rare earth dopants and Ge-pumped frequency combs have promise. Optical resonators and waveguide spirals can enhance sensitivity. PbTe materials are among the best choices for a standard, waveguide integrated photodetector. Chalcogenide glasses are capable of transmitting mid-IR signals with high transparency. Integrated sensor case studies of i) high sensitivity analyte detection in solution; ii) gas sensing in air and iii) on-chip spectrometry provide good insight into the tradeoffs being made en route to ubiquitous sensor deployment in an Internet of Things.

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Silicon photonics is considered as a promising technology to overcome the difficulties of the existing digital and analog optical communication systems, such as low integration, high cost, and high power consumption. Silicon optical modulator, as a component to transfer data from electronic domain to optical one, has attracted extensive attentions in the past decade. In this paper, we review the statuses of the silicon optical modulators for digital and analog optical communications and introduce our efforts on these topics. We analyze the relationship between the performance and the structural parameters of the silicon optical modulator and present how to optimize its performance including electro-optical bandwidth, modulation efficiency, optical bandwidth and insertion loss. The fabricated silicon optical modulator has an electro-optical bandwidth of 30 GHz. Its extinction ratios are 14.0 dB, 11.2 dB and 9.0 dB at the speeds of 40 Gbps, 50 Gbps and 64 Gbps for OOK modulation. The high extinction ratio of the silicon optical modulator at the high speed makes it very appropriate for the application of optical coherent modulation, such as QPSK and 16-QAM. The fabricated silicon optical modulator also can be utilized for analog optical communication. With respect to a noise floor of -165 dBc, the dynamic ranges for the second-order harmonic and the third-order intermodulation distortion are 90.8 dB and 110.5 dB respectively. By adopting a differential driving structure, the dynamic range for the second-order harmonic can be further improved to 100.0 dB while the third-order intermodulation distortion remains the same level.

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

The on-chip generation of optical quantum states will enable accessible advances for quantum technologies. We demonstrate that integrated quantum frequency combs (based on high-Q microring resonators made from a CMOS-compatible, high refractive-index doped-glass platform) can enable the generation of pure heralded single photons, cross-polarized photon pairs, as well as bi- and multi-photon entangled qubit states over a broad frequency comb covering the S, C, L telecommunications band, with photon frequencies corresponding to standard telecommunication channels spaced by 200 GHz. Exploiting a self-locked, intra-cavity excitation configuration, a highly-stable source of multiplexed heralded single photons is demonstrated, operating continuously for several weeks with less than 5% fluctuations. The photon bandwidth of 110 MHz is compatible with quantum memories, and high photon purity was confirmed through single-photon auto-correlation measurements. In turn, by simultaneously exciting two orthogonal polarization mode resonances, we demonstrate the first realization of type-II spontaneous FWM (in analogy to type-II spontaneous parametric down-conversion), allowing the direct generation of orthogonally-polarized photon pairs on a chip. By using a double-pulse excitation, we demonstrate the generation of time-bin entangled photon pairs. We measure qubit entanglement with visibilities above 90%, enabling the implementation of quantum information processing protocols. Finally, the excitation field and the generated photons are intrinsically bandwidth-matched due to the resonant characteristics of the ring cavity, enabling the multiplication of Bell states and the generation of a four-photon time-bin entangled state. We confirm the generation of this four-photon entangled state through four-photon quantum interference.

Silicon photonics offer a promising solution to high speed chip-to-chip interconnects implied by the next generation of computing and communication systems. Electro-optical modulators are the key devices enabling data to be imparted onto an optical carrier wave to propagate in silicon photonic links. Modulators that utilize transparent conducting oxides as the electro-optical active layer in hybrid plasmonic waveguides have recently received a lot of attention. However, no study has considered embedding the conducting oxide in hybrid plasmonic ring and disk structures. In this paper, we propose a novel hybrid plasmonic micro-ring modulator employing an indium-tin-oxide (ITO) layer on silicon-on-insulator (SOI) platform. A pure standard silicon access waveguide is introduced and a detailed discussion of the coupling junction design is presented. Due to its unique electro-optical properties, a unity order change in the refractive index of ITO is attainable and exploited to make a significant shift in the resonance wavelength eliminating the need for high quality factor resonance without sacrificing power consumption. Unlike conventional ring modulators, the proposed modulation mechanism uses the combined effect of changes in both the real and the imaginary parts of the refractive index to control the resonance wavelength and extinction ratio. We comprehensively study the modulator performance and the transmission spectra using FDTD simulations. Optimization of the design leads to a high modulation depth of about 20 dB for an applied voltage of 2V. The design has an estimated total capacitance less than 2 fF.

Graphene with its high carrier mobility as well as its tunable light absorption is an attractive active material for highspeed electro-absorption modulators (EAMs). Large-area CVD-grown graphene monolayers can be transferred onto arbitrary substrates to add active optoelectronic properties to intrinsically passive photonic integration platforms. In this work, we present graphene-based EAMs integrated in passive polymer waveguides. To facilitate modulation frequencies in the GHz range, a 50 Ω termination resistor as well as a DC blocking capacitor are integrated with graphene EAMs for the first time. Large signal data transmission experiments were carried out across the O, C and L optical communications bands. The fastest devices exhibit a 3-dB bandwidth of more than 4 GHz. Our analytical model of the modulation response for the graphene-based EAMs is in good agreement with the measurement results. It predicts that bandwidths greater than 50 GHz are possible with future device iterations. Owing to the absorption properties of the graphene layers, the devices are expected to be functional at smaller wavelengths of interest for optical interconnects and data-communications as well, offering a novel flexibility for the integration of high-speed functionalities in optoelectronic integrated circuits. Our work is the first step towards an Active Optical Printed Circuit Board, hiding the optics completely inside the board and thus removing entry barriers in manufacturing. We believe this will lead to the same success as observed in Active Optical Cables for short range optically wired connections.

An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of ~12 dB for an applied peak to peak voltage of only 2 V and energy consumption of ~1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.

In this paper, we propose a tapered graded-index (GI) core polymer optical waveguide with only 300-micrometer length for applying to a very short light path such as optical VIA and optical pin. The tapered GI core polymer waveguides are actually fabricated utilizing the imprint method. We theoretically and experimentally demonstrate that tapered GI core polymer waveguides exhibit lower loss (1 dB or more) than tapered step-index (SI) core waveguides. In recent years, the data traffic in datacenters has grown rapidly due to the deployment of cloud services. In order to support this growth, optical interconnection technologies are gradually deployed and approaching to short-reach regions in the vicinity of LSI chips. Hence, a low loss very short optical path that perpendicularly passes through printed circuit boards (PCBs) or interposers are required. The optical VIA in PCBs and optical pin in optical transceivers are the examples. In such a short optical path, a tapered waveguide structure has been reported. However, the excess loss due to the scattering at the core-cladding interface and the increase in the divergence angle of the output light would be problems in the current SI core waveguide based optical VIA and optical pin. Therefore, we focus on GI core waveguides in this paper, because GI core waveguides confine the propagating modes strongly to the center of the core. In addition, the short GI-cores play a role of GRIN (convex) lenses, as well. So, the output NA from tapered GI core waveguides is optimized by adjusting the waveguide parameters.

An array of grating couplers is studied to be used for beam steering in a wireless optical communication system. This structure is designed using a rib waveguide with a silicon thickness of 220nm and an etch depth of 70nm using 2μm silica substrate. TE polarized input light with wavelength of 1550nm is coupled into the feed waveguide. The structure is optimized based on the angular coverage, directed power, and beam efficiency of the radiated main beam of an individual grating coupler. The main beam radiated by optimized grating coupler has a beamwidth of 10.3°×30.7°. The designed 1-D array of the fifteen grating couplers provides tunability in the range of around 30 degrees which is required for a point to pint wireless optical communication transmitter.

Sensing devices based on Graphene Field Effect Transistors (G-FET) have been demonstrated by several groups to show excellent sensitivity for a variety of chemical agents. These devices are based on measuring changes in the electrical conductivity of graphene when exposed to various chemicals. However, because of its unique band structure, graphene also exhibits changes in its optical response upon chemical exposure. The conical intersection of the valence and conduction bands results in a low density of states near the Dirac point. At this point, chemical doping resulting from molecular binding to graphene can result in dramatic changes in graphene’s optical absorption. Here we will discuss our recent work in developing a graphene planar lightwave circuit (PLC) sensor which exploits these optical and electronic properties of graphene to demonstrate chemical sensitivity. The devices are based on a strong evanescent coupling of graphene via electrically gated silicon nanowire waveguides. A strong response in the form of a reversible optical attenuation change of 6 dB is shown when these devices interact with toxic industrial chemicals such as iodine and ammonia. The optical transition can also be tuned to the optical c-band (1530-1565 nm) which enables these devices to operate at telecom wavelengths.

Chemical sensing is usually achieved in photonics platforms by monitoring spectral changes on the output of a passive photonic element due to the modulation of the refractive index of core and cladding. Therefore, compact interferometers are usually sought for the embodiment of refractometer sensors. We present our work on refractive index sensors based on arrayed waveguide interference, which are built on a Silicon-On-Insulator (SOI) platform. A comparative study of two configurations, resonant and non-resonant is presented. In both cases the main design is based on a set of closely placed single mode waveguides. The distance between waveguides is such that directional coupling occurs. Moreover, when the distance between the waveguides is small comparatively to the transversal exponential decay length of the eigenmode of the waveguide, there is an enhancement effect of the electric field in the region between the waveguides, as usually seen for slotted waveguides. The reported sensors include multiple parallel slotted waveguides which are the core of the sensor. Non-resonant configuration incorporates straight waveguides from which the output can be directly imaged onto a CCD array for direct sensor read-out, while the resonant layout presents a set of concentric racetrack waveguides designed for light extended lifetime, enhancing the sensor sensitivity. A top polymer cladding is used to encapsulate the waveguides providing a permeable low index material. This cladding material acts as the transducer element, changing its optical properties when in contact with a chemical of interest, therefore allowing for high sensitivity and chemical selectivity.

Recently, it was experimentally demonstrated (K.W. Allen et al., APL 108, 241108 (2016)) that microspheres can be used as contact microlenses to enhance the efficiency of collection of light by individual pixels in mid wave infrared (MWIR) focal plane arrays (FPAs). In this work, using finite difference time domain (FDTD) modeling, we optimized the designs of such FPAs integrated with microspheres for achieving maximal angle of view (AOV) as a function of the index of refraction and diameter of the spheres. We also designed structures where the spheres are partly immersed in a layer of photoresist. Our designs are developed for both front-side and back-side illuminated structures. Compared to standard microlens arrays, our designs provide much larger angle of view reaching ~15 degrees for front-illuminated and ~4 degrees for back-illuminated structures. Our designs allow decreasing the sizes of photosensitive mesas down to wavelength-scale dimensions determined by the minimal waists of the focused beams produced by the dielectric microspheres, so-called photonic jets. This opens a principle possibility to reduce the dark current and increase the operating temperature of MWIR FPAs. We also discuss the techniques of fabrication of such FPAs integrated with a large number of microspheres and show that suction assembly of microspheres is a promising method of obtaining massive-scale integration of microspheres onto the individual pixels with very small concentration of defects.

An indoor visible-light communication performance is investigated utilizing energy efficient white light by 2D LED arrays. Enabled by recent advances in LED technology, IEEE 802.15.7 standardizes high-data-rate visible light communication and advocates for colour shift keying (CSK) modulation to overcome flicker and to support dimming. Voronoi segmentation is employed for decoding N-CSK constellation which has superior performance compared to other existing decoding methods. The two chief performance degrading effects of inter-symbol interference and LED nonlinearity is jointly mitigated using LMS post equalization at the receiver which improves the symbol error rate performance and increases field of view of the receiver. It is found that LMS post equalization symbol at 250MHz offers 7dB SNR improvement at SER10^-6

Optimized GaN-based light-emitting diodes (LEDs) were recently demonstrated to emit photons of higher energy than provided by the injected electrons up to elevated currents beyond the peak of the power conversion efficiency. Correspondingly, the electrical efficiency is above unity, which is attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the origin of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. For the first time, our simulations reveal the magnitude and the local profile of the heat extraction from the lattice. The built-in nitride polarization field is found to enhance the cooling effect significantly.

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

We designed a prototype for testing feasibility of a proposed light detection and ranging (LIDAR) system, which was designed to encode pixel location information in its laser pulses using the direct-sequence optical code division multiple access method in conjunction with a scanning-based microelectromechanical system (MEMS) mirror. The prototype was built using commercial o -the-shelf optical components and development kits. It comprised of an optical modulator, an amplified photodetector, an MEMS mirror development kit, an analog-to-digital converter evaluation module, a digital signal processor with ARM evaluation kit and a Windows personal computer. The prototype LIDAR system has capable of acquiring 120 x 32-pixel images at 5 frames/s. We measured a watering pot to demonstrate the imaging performance of the prototype LIDAR system.

Lock-in amplifier (LIA) has been widely used in optical signal detection systems because it can measure small signal under high noise level. Generally, The LIA used in optical signal detection system is composed of transimpedance amplifier (TIA), phase sensitive detector (PSD) and low pass filter (LPF). But commercial LIA using LPF is affected by flicker noise. To avoid flicker noise, there is 2ω detection LIA using BPF. To improve the dynamic reserve (DR) of the 2ω LIA, the signal to noise ratio (SNR) of the TIA should be improved. According to the analysis of frequency response of the TIA, the noise gain can be minimized by proper choices of input capacitor (Ci) and feed-back network in the TIA in a specific frequency range. In this work, we have studied how the SNR of the TIA can be improved by a proper choice of frequency range. We have analyzed the way to control this frequency range through the change of passive component in the TIA. The result shows that the variance of the passive component in the TIA can change the specific frequency range where the noise gain is minimized in the uniform gain region of the TIA.

Utilizing LED light source modules with 3 different RGB colors, the illumination effect of different wavelengths had been investigated on the growth curve of the same kind of micro algae. It was found that the best micro algae culturing status came out with long wavelength light such as red light (650~670 nm). Based on the same condition for a period of 3 weeks , the grown micro algae population density ratio represented by Optical Density (O.D.) ratio is 1：0.4：0.7 corresponding to growth with Red, Green, Blue light sources, respectively. Mixing 3 types and 2 types of LEDs with different parameters, the grown micro algae population densities were compared in terms of O.D. Interestingly enough, different light sources resulted in significant discoloration on micro algae growth, appearing yellow, brown, green, etc. Our experiments results showed such discoloration effect is reversible. Based on the same lighting condition, micro algae growth can be also affected by incubator size, nutrition supply, and temperature variation. In recent years, micro algae related technologies have been international wise a hot topic of energy and environmental protection for research and development institutes, and big energy companies among those developed countries. There will be an economically prosperous future. From this study of LED lighting to ideal algae cultivation, it was found that such built system would be capable of optimizing artificial cultivation system, leading to economic benefits for its continuous development. Since global warming causing weather change, accompanying with reducing energy sources and agriculture growth shortage are all threatening human being survival.