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Advanced Processing of Semiconductor Devices II

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Volume Details

Volume Number: 0945
Date Published: 16 August 1988

Table of Contents
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Reactive Ion Etching Of Laser Structures
Author(s): G. Allen Vawter
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Multilevel Interconnects For Integrated Circuits With Submicron Design Rules
Author(s): S. R. Wilson; R. J. Mattox; J. Seeger
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Low Thermal Expansion Polyimide Buried Ridge-Waveguide AlGaAs Laser Diode
Author(s): Fumihiko Sato; Hiroshi Imamoto; Koichi Imanaka; Mikihiko Shimura
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Studies Of Ion Beam Enhanced Mixing Of AlGaAs Superlattices
Author(s): P. Mei; S. A. Schwarz; T. Venkatesan; N. G. Stoffel; J. P. Harbison
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Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)
Author(s): S. Sharan; J. Narayan; J. W. Lee; J. C. C. Fan
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Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing
Author(s): Andrzej Rys; Tim Chin; Alvin Compaan; Ajit Bhat
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Growth Of Compound Semiconductor By Atomic Layer Epitaxy And Applications
Author(s): Salah M. Bedair
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In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures
Author(s): A. Scherer; J. P . Harbison; D. M. Hwang; E. D . Beebe
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Photochemical Vapor Deposition Of Gallium Arsenide
Author(s): D. P. Norton; P. K. Ajmera
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Plasmon Amplification In Semiconductor Superlattices
Author(s): K. Kempa; P. Bakshi; J. Cen
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Synthesis Of The Multialkali Photocathodes By Molecular Beam Epitaxy
Author(s): V. V. Balanyuk; A. S. Chernikov; V. F. Krasnov; S. L. Musher; V. E. Ryabchenko; A. M. Prokhorov; I. A. Dubovoi; V. K. Ushakov; M. Ya. Schelev
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Rapid Isothermal Processing (RIP) Of Dielectrics
Author(s): R. Singh; F. Radpour
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Processing & Characterization Of Thin Films Of SiO[sub]2[/sub] On Si For Integrated Circuits
Author(s): N. M. Ravindra; W. N. Carr; O. L. Russo; D. Fathy; A. R. Heyd; K. Vedam; J. Narayan
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Laser Processing Of Semiconductors - A Production Machine
Author(s): Leslie L. Burns; Arthur R. Elsea
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Reactive Ion Etching Of A Multicomponent Glass Substrate
Author(s): Yue Kuo; J. R. Crowe
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In-Situ Rapid Isothermal Processing Of II-A Fluorides On Silicon
Author(s): R. Singh; F. Radpour; J. Narayan
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Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect Transistors
Author(s): Winston K. Chan; Herbert M. Cox; Joseph H. Abeles; Stephen P. Kelty
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Characterization Of Isolated Silicon Epitaxy Material
Author(s): L. T. P. Allen; M. W. Batty; W. R. Henderson; T. E. Jersey; D. P. Vu; P. M. Zavracky; J. Narayan
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Effects Of Rapid Thermal Postoxidation Of Rapid Thermally Nitrided Oxides
Author(s): S. Lee; D. K. Shih; D. L. Kwong
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Nanofabrication Of Quantum Coupled Devices
Author(s): J. N. Randall; M. A. Reed; R. J. Matyi; T. M. Moore; R. J. Aggarwal; A. E. Wetsel
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Defects And Interfaces In Zone Melt Recrystallized Silicon
Author(s): A. R. Srivatsa; J. Narayan; P. M. Zavacky
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Impurity Phase Transitions In Silicon Emitter Junctions
Author(s): Gert I. Andersson; Olof Engstrom
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High Peak Power Low Threshold AlGaAs/GaAs Stripe Laser Diodes On Si Substrates By Hybrid MBE/MOCVD Growth
Author(s): J. H. Kim; A. Nouhi; G. Radhakrishnan; J. Katz
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