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Growth of Compound Semiconductor Structures II
Editor(s): Anupam Madhukar

*This item is only available on the SPIE Digital Library.

Volume Details

Volume Number: 0944
Date Published: 15 August 1988

Table of Contents
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Heteroepitaxial Growth Of CdTe On GaAs (100) : RHEED and XPS Study Of The Te Precursor Surface
Author(s): S. Tatarenko.; K. Saminadayar; J. Cibert; Y. Gobil; G. Cohen-Solal; F. Bailly
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Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si
Author(s): Shiro Sakai; S. S. Chang; R. J. Matyi; H. Shichijo
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In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs
Author(s): Paul R. Berger; Kevin H. Chang; Pallab Bhattacharya; Jasprit Singh; K. K. Bajaj
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Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation
Author(s): S. V. Ghaisas; A. Madhukar
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The Effect Of Surface Stoichiometry On The Initial Stages Of Heteroepitaxy Of II-VI Compounds Grown On (001)GaAs By Molecular Beam Epitaxy
Author(s): Takafumi Yao; Masami Fujimoto; Hiroshi Nakao
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A New Model For Excess Ga Interdiffusion Process In GaAs/CdTe Heteroepitaxies
Author(s): D. Esteve; M. Djafari-Rouhani; V. V. Pham; A. Bennis; J. J. Simonne
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Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates
Author(s): Francis Bailly; Michel Barbe; Gerard Cohen-Solal
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Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth
Author(s): D. Esteve; M. Djafari - Rouhani; V. V. Pham; A. Amrani; J. J. Simonne
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TEM And HREM Characterization Of (Hg,Cd)Te/GaAs And CdTe/GaAs Interfaces
Author(s): A. M. Gue; A. Mazel; M. Barbe; G. Cohen-Solal; D. Esteve
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Photoluminescence And Electrical Properties Of MBE-Grown And Post-Annealed Zinc Selenide
Author(s): S. K. Mohapatra; G. A. Haugen; H. Cheng; J. E. Potts; J. M. De Puydt
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The Influence Of Surface Structure On Diamond-Lattice Epitaxial Growth From The Vapor Phase
Author(s): A. Rockett
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Electron Beam Source Molecular Beam Epitaxy Of AlxGa1-xAs Graded Band Gap Device Structures
Author(s): R. J. Malik; A. F. J. Levi; B. F. Levine; R. C. Miller; D. V. Lang; L. C. Hopkins; R. W. Ryan
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Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates
Author(s): E. Kapon; C. P. Yun; D. M. Hwang; M. C. Tamargo; J. P. Harbison; R. Bhat
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Effects Of Strains On The Polar/Non-Polar Heteroepitaxy
Author(s): Hilmi Unlu; Hadis Morkoc
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Molecular Beam Epitaxial Growth Of InAsSb Superlattices For IR Applications
Author(s): L.Ralph Dawson
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CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy
Author(s): Koji Shinohara; Yoshito Nishijima; Hiroji Ebe; Osamu Ueda
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Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport
Author(s): Gerard Perrier; Robert Philippe; Jean-Pol Dodelet
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Heteroepitaxiai Growth Of CdTe And CdHgTe By Close-Spaced Vapor Transport
Author(s): Michel Barbe; Gerard Cohen-Solal
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Atomic Layer Epitaxy Of II-VI Compounds
Author(s): Takafumi Yao
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Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures
Author(s): F. F. So; S. R. Forrest
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Growth Of Quantum Wire Superlattices And Tilted Superlattices By Molecular Beam Epitaxy
Author(s): J. M. Gaines; P. M. Petroff; H. Kroemer; R. J. Simes; R. S. Geels; J. H. English
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Status Of Fluoride-Semiconductor Heteroepitaxial Growth
Author(s): Antonio Munoz-Yague; Chantal Fontaine
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Electron-Beam Exposure Heteroepitaxial Growth Of GaAs/CaF2/Si Structures
Author(s): Seijiro Furukawa; Hiroshi Ishiwara; Tanemasa Asano; Hee Chul Lee
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In-Situ Rapid Isothermal Processing Of II-A Fluorides On Compound Semiconductors
Author(s): R. Singh; F. Radpour; J. Narayan
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Effects Of Low-Energy Ion/Surface Interactions On Nucleation And Growth Kineticsiduring Film Growth From The Vapor Phase
Author(s): J. E. Greene
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Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100)
Author(s): F. J. Grunthaner; A. Madhukar; J. K. Liu; P. D. Lao; W. C. Tang; S. Guha
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