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Semiconductor Growth Technology
Editor(s): Esther Krikorian

*This item is only available on the SPIE Digital Library.

Volume Details

Volume Number: 0323
Date Published: 15 September 1982

Table of Contents
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Molecular Beam Epitaxial Growth Of Silicon Devices
Author(s): F. G. Allen; S. S. Iyer; R. A. Metzger
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Al[sub]x[/sub]Ga[sub]1-x[/sub]As/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy
Author(s): H. Morkoc; N. Holonyak Jr.; T. J. Drummond; M. D. Camras; R. Fischer
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Cascade AlGaAs-GaAs Solar Cell Research Using Molecular Beam Epitaxy
Author(s): D. L. Miller; H. T. Yang; S. W. Zehr
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Novel Ga/AsCl[sub]3[/sub]/H[sub]2[/sub] Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs
Author(s): P. C. Colter; C. W. Litton; D. C. Reynolds; D. C. Look; P. W. Yu; S. S. Li; W. L. Wang
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Growth And Characterization Of High Purity H[sub]2[/sub]-In-HCl-PH[sub]3[/sub] Vapor Phase Epitaxy (VPE) InP
Author(s): T. J. Roth; B. J. Skromme; T. S. Low; G. E. Stillman; L. M. Zinkiewicz
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Material Characterization And Device Performance Of Liquid Doping Si In GaAs By AsCl[sub]3[/sub] Technique
Author(s): M. Feng; V. Eu; T. Zielinski; J. M. Whelan
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InP Millimeter Wave Gunn Devices By Vapor Phase Epitaxy (VPE)
Author(s): J. D. Crowley; D. R. Tringali; I. V. Zubeck; F. B. Fank
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Growth And Characterization Of Vapor Deposited Indium Phosphide
Author(s): B. W. Wessels; M. Inuishi
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Laser Spectroscopic Monitoring Of A Hydride Transport Vapor Phase Epitaxy (VPE) Reactor
Author(s): R. F. Karlicek; V. M. Donnelly; W. D. Johnston Jr.
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Organometallic Vapor Phase Epitaxy (OMVPE) Growth Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As
Author(s): Gerald B. Stringfellow
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Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications
Author(s): S. T. Jolly; S. Y. Narayan; J. P. Paczkowski; D. Capewell
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Comparison Of InP Grown By The Chloride And Hydride Techniques
Author(s): Kenneth A. Jones
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Reflecting On Metalorganic Chemical Vapor Deposition (MOCVD)
Author(s): H. M. Manasevit
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Shallow Proton Striped GaAlAs Lasers Grown By Metalorganic Chemical Vapor Deposition (MOCVD)
Author(s): R D. Burnham; D. R. Scifres; W. Streifer
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Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources
Author(s): Rajaram Bhat; Vassilis G. Keramidas
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High Efficiency GaAs[sub](1-x)[/sub]P[sub](x)[/sub] Solar Cells Fabricated By Vacuum Metalorganic Chemical Vapor Deposition
Author(s): Lewis M. Fraas
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Use Of Column V Alkyls In Organometallic Vapor Phase Epitaxy (OMVPE)
Author(s): M. J. Ludowise; C. B. Cooper III
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Impurity Energy Levels For Se And Zn In Ga[sub](1 -x)[/sub]Al[sub]x[/sub]As
Author(s): Jane J. Yang; William I. Simpson; Lavada A. Moudy
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Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD)
Author(s): R. D. Dupuis; R. T. Lynch; C. D. Thurmond; W. A. Bonner
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Liquid Phase Epitaxy (LPE) Techniques For Compound Semiconductor Growth
Author(s): L. R. Dawson
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Compound Semiconductor Surface And Interface Problems In Liquid Phase Epitaxy (LPE)
Author(s): M. B. Small; R. M. Potemski
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Optical Device Structures Grown By Liquid Phase Epitaxy (LPE)
Author(s): R. A. Logan
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Slider Induced Convection In Horizontal Liquid Phase Epitaxy (LPE) System
Author(s): S. Y. Leung; N. E. Schumaker
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Determination Of Al In Ga[sub]1-x[/sub]Al[sub]x[/sub]As By Auger Spectroscopy Ion Microprobe Analysis And Photoluminescence
Author(s): T. S. Stewart; S. I. Boldish; J. A. Osmer; N. Marquez; D. G. Heflinger; G. A. Evans; J. B. Kirk; A. Ceruzzi; A. Mantie; T. Stockton
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