Share Email Print


Infrared Detector Materials
Editor(s): H. R. Riedl

*This item is only available on the SPIE Digital Library.

Volume Details

Volume Number: 0285
Date Published: 11 June 1981

Table of Contents
show all abstracts | hide all abstracts
Evolving Perspectives And Unifying Characteristics Of The IV-VI Semiconductors
Author(s): Robert S. Allgaier
Show Abstract
Epitaxial Thin Film IV-VI Detectors: Device Performance And Basic Material Properties
Author(s): A. C. Bouley; T. K. Chu; G. M. Black
Show Abstract
Preparation Of Epitaxial Thin Film Lead Salt Infrared Detectors
Author(s): T. K. Chu; A. C. Bouley; G. M. Black
Show Abstract
The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes
Author(s): M. Drinkwine; J. Rozenbergs; S. Jost; A. Amith
Show Abstract
Physics Of Surface Space Charge Layers On PbTe
Author(s): Ryan E. Doezema
Show Abstract
Magnetoresistance In IV-VI Semiconductors
Author(s): J. B. Restorff; B. B. Houston
Show Abstract
Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te
Author(s): J. L. Schmit; R. J. Hager; R. A. Wood
Show Abstract
Effect Of Ultraviolet Irradiation On The Performance Of (Hg,Cd)Te Photoconductors
Author(s): P. J. Kannam; P. LoVecchio
Show Abstract
Properties Of rf Triode-Sputtered (Hg1-xCdx)Te Thin Films
Author(s): Roy H. Cornely; Lawrence Suchow; Michael Mulligan; Riaz Haq
Show Abstract
Properties Of Passivant Films On HgCdTe - Interaction With The Substrate
Author(s): G. D. Davis; T. S. Sun; S. P. Buchner; N. E. Byer
Show Abstract
Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties
Author(s): O. J. Marsh; R. Baron; J. P. Baukus; M. H. Young; G. D. Robertson
Show Abstract
Improved Uniformity In Float Zone Si:Ga
Author(s): Hiroshi Kimura; Dennis J. O'Connor; M. Frances Harvey; Carlos B. Afable; Glenn D. Robertson; Ogden J. Marsh
Show Abstract
Silicon-Rich Si-Ge Alloys For Infrared Detectors - Material Properties
Author(s): R. Baron; M. H. Young; H. Kimura; H. Winston
Show Abstract
Development Of In-X Doped Silicon As An Infrared Detector Material
Author(s): D. K. Arch; D. E. Schafer
Show Abstract
Solution Growth Of Thallium-Doped Silicon For 3-5 Micrometer Photoconductive Detectors
Author(s): D. E. Schafer
Show Abstract

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?