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Optical Characterization Techniques for Semiconductor Technology
Editor(s): David E. Aspnes; Roy F. Potter; Samuel S. So

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Volume Details

Volume Number: 0276
Date Published: 30 April 1981

Table of Contents
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Characterization Of Semiconductors By Photoluminescence And Photoluminescence Excitation Spectroscopy
Author(s): S. G. Bishop
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Semiconductor Materials Characterization By High-Resolution Optical Spectroscopy
Author(s): D. C. Reynolds; C. W. Litton
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Photoluminescence Characterization Of Thermally-Induced Defects In Czochralski-Grown Si Wafers
Author(s): T. Nishino; H. Nakayama; J. Katsura; Y. Hamakawa
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Cathodoluminescence Studies Of Semiconductor-Oxide Interfaces
Author(s): S. W. McKnight
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Electro-Optical Characterization Of Semiconductors
Author(s): W. Y. Lum; A. K. Nedoluha; H. H. Wieder
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Lifetime Scanning Measurements On Hg0.7Cd0.3Te By Population Modulation
Author(s): J. A. Mroczkowski; J. F. Shanley; D. L. Polla; P. J. Kannam
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Characterization Of Low-Doped Metal Oxide Semiconductor (MOS) Structures Using Pulsed Photoinjection
Author(s): U. Efron; J. Grinberg
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Applications Of A Two-Wavelength Laser Scanner For Material/Device Characterization
Author(s): B. L. Sopori
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Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors
Author(s): G. P. Schwartz
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Material Characterization By Raman Scattering
Author(s): Raphael Tsu
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Characterization Of Thermal Annealing Of Implanted GaAs Using Raman Scattering
Author(s): Perry Pappas Yaney; William E. Baird, Jr.; Y. S. Park
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Surface Plasmon Spectroscopy For The Optical Characterization Of Thin Metal Films And Their Surfaces
Author(s): Joseph G. Gordon II
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Infrared Transmission Characterization Of P-Type Gallium Arsenide
Author(s): W. J. Moore
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Optical Properties Of Proton Implanted N-Type GaAs
Author(s): J. M. Zavada; H. A. Jenkinson; T. J. Gavanis
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Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs
Author(s): W. M. Theis; C. W. Litton; K. K. Bajaj
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Direct Determination Of The Far-Infrared Optical Constants Of A Solid
Author(s): D. G. Mead
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Future Needs For Semiconductor Characterization
Author(s): C. R. Helms
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Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity
Author(s): G. L. Olson; S. A. Kokorowski; J. A. Roth; R. S. Turley; L. D. Hess
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Light Scattering Surface Roughness Characterization
Author(s): John A. Detrio
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Modulation Spectroscopy As A Technique For Semiconductor Characterization
Author(s): Fred H. Pollak
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Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers
Author(s): N. Bottka; Marian E. Hills
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End-Point Detection With Laser Interferometry
Author(s): Heinz H. Busta
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Optical Methods For End-Point Detection In Plasma Etching
Author(s): Paul J. Marcoux; Pang-Dow Foo
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Ellipsometric Configurations And Techniques
Author(s): R. M. A. Azzam
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Microstructural Information From Optical Properties In Semiconductor Technology
Author(s): D. E. Aspnes
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Process Control In Semiconductor Technology Using Ellipsometry
Author(s): J. B. Theeten; M. Erman; P. Dimitriou
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Optical Properties Of Lamelliform Materials
Author(s): Roy F. Potter
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Reflection Spectroscopy Analysis Of Surfaces And Thin Films
Author(s): Wayne J. Anderson; Wilford N. Hansen
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Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers
Author(s): Benjamin Senitzky; S. P. Weeks
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Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry
Author(s): D. E. Aspnes; A. A. Studna
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A New High Precision Differential Spectrometer: Construction, Characteristics, And Capabilities
Author(s): R. B. Stephens; G. K. Sorensen
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Characteristics Of Polarized Light Reflection From The Si02-Si Film-Substrate System
Author(s): R. M. A. Azzam; A.-R. M. Zaghloul
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Small Area Measurement Of Multiple Film Thicknesses, Dopant Concentrations And Impurity Levels Using A New Infrared Microspectrophotometer
Author(s): David J. Zearing; Vincent J. Coates
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