
Proceedings Paper
Thermal effects on interconnect crosstalk of optoelectronic transmitter modulesFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
An analytical model based on interconnect parameters is presented for the analysis of thermal effects on crosstalk and performance of multi-channel optoelectronic modules. The model is accurate for computing crosstalk of interconnects used in chip packaging. In addition, model is used to determine the thermal critical frequency, fcrit, above which signals becomes severely deteriorated and can be applied in the design and packaging of optoelectronic transmitter modules for reliable data transmission.
Paper Details
Date Published: 27 November 2012
PDF: 6 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551Y (27 November 2012); doi: 10.1117/12.999876
Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)
PDF: 6 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551Y (27 November 2012); doi: 10.1117/12.999876
Show Author Affiliations
Ikechi Augustine Ukaegbu, KAIST (Korea, Republic of)
Jamshid Sangirov, KAIST (Korea, Republic of)
Bikash Nakarmi, KAIST (Korea, Republic of)
Jamshid Sangirov, KAIST (Korea, Republic of)
Bikash Nakarmi, KAIST (Korea, Republic of)
Tae-Woo Lee, KAIST (Korea, Republic of)
Mu-Hee Cho, KAIST (Korea, Republic of)
Hyo-Hoon Park, KAIST (Korea, Republic of)
Mu-Hee Cho, KAIST (Korea, Republic of)
Hyo-Hoon Park, KAIST (Korea, Republic of)
Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)
© SPIE. Terms of Use
