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Proceedings Paper

Numerical simulation on output performance of continuous-wave Raman silicon lasers
Author(s): Hongxin Su; Lijing Xu; Zhitao Dai; Xiaoming Li; Xu Li
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Paper Abstract

To understand the physical process of SRS lasing in SOI waveguides and to optimize the performance of continuouswave Raman silicon lasers, in this paper numerical simulation on the output characteristics of continuous-wave Raman silicon lasers with different parameters is performed. Based on power propagation equations in SOI waveguides and boundary conditions, the output powers as functions of the launched pump power, the gain length, the reflectivity of the output end, and the effective mode area of the SOI waveguide are presented. It is shown that two-photon absorption (TPA) and free-carrier absorption (FCA) lead to a significant reduction to the output power of continuous-wave Raman silicon lasers, which is in good agreement with the experimental reports. Numerical analysis predicts that in the absence of TPA and FCA there are optimum values for the silicon waveguide length, the effective mode area and the output reflectivity, respectively.

Paper Details

Date Published: 29 November 2012
PDF: 7 pages
Proc. SPIE 8552, Semiconductor Lasers and Applications V, 85520U (29 November 2012); doi: 10.1117/12.999705
Show Author Affiliations
Hongxin Su, Hebei Univ. (China)
Lijing Xu, Hebei Univ. (China)
Zhitao Dai, Hebei Univ. (China)
Xiaoming Li, Hebei Univ. (China)
Xu Li, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 8552:
Semiconductor Lasers and Applications V
Ning Hua Zhu; Jinmin Li; Frank H. Peters; Changyuan Yu, Editor(s)

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