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Proceedings Paper

Crystallization and amorphization studies on a Ge2Sb2Te5 thin film sample using a two-laser static tester
Author(s): Pramod K. Khulbe; Xiaodong Xun; Masud Mansuripur
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Paper Abstract

In phase-change (PC) optical data storage, information bits are recorded as amorphous marks on a crystalline film of GeSbTe alloy (hereinafter referred to as GST). This is achieved by raising the local temperature of the film above its melting point (approximately 600°C) using a high power laser pulse, and allowing the film to cool down rapidly to below its glass transition temperature. The crystalline-to-amorphous transition (or vice-versa) is accompanied by a large change in the optical constants of the GST material, which provides a mechanism for optical readout. Thus, crystallization, melting, and amorphization of thin GST films are of fundamental significance in PC optical recording technology. Several such studies have been undertaken in the past, using a single laser beam to both trigger the transformation and monitor its progress. In the present paper we describe the results obtained in a novel, two-laser static tester, which allows real-time monitoring of the crystallization/amorphization processes both during the laser pulse and in the cooling period following the pulse.

Paper Details

Date Published: 28 June 1999
PDF: 3 pages
Proc. SPIE 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999, 38641V (28 June 1999); doi: 10.1117/12.997650
Show Author Affiliations
Pramod K. Khulbe, Univ. of Arizona (United States)
Xiaodong Xun, Optical Sciences Ctr./Univ. of Arizona (United States)
Masud Mansuripur, Optical Sciences Ctr./Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 3864:
Joint International Symposium on Optical Memory and Optical Data Storage 1999
Shigeo R. Kubota; Ryuichi Katayama; Douglas G. Stinson, Editor(s)

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