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Proceedings Paper

355nm absorption in HfO2 and SiO2 monolayers with embedded Hf nanoclusters studied using photothermal heterodyne imaging
Author(s): S. Papernov; E. Shin; T. Murray; A. W. Schmid; J. B. Oliver
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Paper Abstract

The role of the Hf nanoclusters as near-UV, nanosecond-pulse laser-damage initiators in HfO2 and SiO2-pair–based multilayer coatings remains speculative. In this work we use photothermal heterodyne imaging (PHI) to investigate absorption in HfO2 and SiO2 monolayers containing embedded nanometer-sized Hf clusters produced by backsidethrough- thin-film ablation. Hf cluster size and areal-density distributions were characterized using transmission electron microscopy. PHI measurements were taken for cluster-containing samples and for similarly prepared HfO2 and SiO2 film samples of the same thickness without clusters. These data allow us to evaluate a possible role in the damageprocess initiation of two hypothetical sources of the localized absorption—Hf clusters and high-density areas of electronic defects.

Paper Details

Date Published: 4 December 2012
PDF: 9 pages
Proc. SPIE 8530, Laser-Induced Damage in Optical Materials: 2012, 85301H (4 December 2012); doi: 10.1117/12.981642
Show Author Affiliations
S. Papernov, Univ. of Rochester (United States)
E. Shin, Univ. of Dayton (United States)
T. Murray, Univ. of Dayton (United States)
A. W. Schmid, Univ. of Rochester (United States)
J. B. Oliver, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 8530:
Laser-Induced Damage in Optical Materials: 2012
Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; M J Soileau, Editor(s)

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