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Proceedings Paper

New development system for EUV mask
Author(s): Masatoshi Terayama; Hideaki Sakurai; Mari Sakai; Masamitsu Itoh; Hideo Funakoshi; Hideaki Iwasaka; Junko Iizuka; Mitsuaki Maruyama; Naoya Hayashi
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Paper Abstract

EUV lithography is one of the approaches to manufacture half-pitch 1x nm devices. It is required high CD mean control, high CD uniformity, and low defect density for EUV mask in common with DUV mask. In addition, backside defect density is drastically tightened to avoid overlay error in EUV scanner. PGSD (Proximity-Gap-Suction-Development), a novel development system we developed, has kept upgrading to satisfy the demand of most-advanced devices, and 3rd-generation PGSD (PGSD Gen. III) which developed for EUV mask will be contributed to achieve required accuracy of EUV mask. In this paper, we propose the concept of PGSD Gen. III and report its performance.

Paper Details

Date Published: 29 June 2012
PDF: 7 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844105 (29 June 2012); doi: 10.1117/12.979645
Show Author Affiliations
Masatoshi Terayama, Toshiba Corp. (Japan)
Hideaki Sakurai, Toshiba Corp. (Japan)
Mari Sakai, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)
Hideo Funakoshi, Tokyo Electron Kyusyu Ltd. (Japan)
Hideaki Iwasaka, Tokyo Electron Kyusyu Ltd. (Japan)
Junko Iizuka, Tokyo Electron Kyusyu Ltd. (Japan)
Mitsuaki Maruyama, Tokyo Electron Kyusyu Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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