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Proceedings Paper

Room-Temperature InGaAs Detector Arrays For 2.5 µm
Author(s): G. H. Olsen; A. M. Joshi; S. M. Mason; K. M. Woodruff; E. Mykietyn; V. S. Ban; M. J. Lange; J. Hladky; G. C. Erickson; G. A. Gasparian
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Paper Abstract

This paper describes new alloy heterojunction detectors of In.8Ga.2As/InAs.56p.4 which can detect light between 1.7 and 2.6 μm with 50% quantum efficiency and 5 mA/cm2 dark current (-1V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 μm diameter devices (spaced 400 um) could be made on a 25 x 30 mm wafer with overall yield above 93%. The ability to operate under -1V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.

Paper Details

Date Published: 8 January 1990
PDF: 7 pages
Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); doi: 10.1117/12.978604
Show Author Affiliations
G. H. Olsen, EPITAXX, Inc. (United States)
A. M. Joshi, EPITAXX, Inc. (United States)
S. M. Mason, EPITAXX, Inc. (United States)
K. M. Woodruff, EPITAXX, Inc. (United States)
E. Mykietyn, EPITAXX, Inc. (United States)
V. S. Ban, EPITAXX, Inc. (United States)
M. J. Lange, EPITAXX, Inc. (United States)
J. Hladky, EPITAXX, Inc (United States)
G. C. Erickson, EPITAXX, Inc. (United States)
G. A. Gasparian, EPITAXX, Inc. (United States)

Published in SPIE Proceedings Vol. 1157:
Infrared Technology XV
Irving J. Spiro, Editor(s)

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