Share Email Print

Proceedings Paper

Band Dege Structure Of Pb1-XsnxTe Doped With Indium By Far-Infrared Magnetoplasma Reflection Method
Author(s): S. Takaoka; S. Shimomura; H. Takahashi; K. Murase
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Far-infrared magnetoplasma reflection spectra of In doped Pb1-xSnxTe are measured across the band inversion region (0.15<x<0.40). From the spectra, the temperature dependeces of photo-carrier concentrations and cyclotron masses are determined below 20K, where large photoconduction is observed. By using the two bands theory with observed masses and carrier concentrations, it is found that the band edge masses become much heavior even by 1% In doping, while the band gaps do not change appreciably as compared with those of undoped Pb1-xSnxTe.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978511
Show Author Affiliations
S. Takaoka, Osaka University (Japan)
S. Shimomura, Osaka University (Japan)
H. Takahashi, Osaka University (Japan)
K. Murase, Osaka University (Japan)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

© SPIE. Terms of Use
Back to Top