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Proceedings Paper

Effects Of Annealing On The Electrical Properties Of P-Cd0.2Hg0.8Te Grown By LPE
Author(s): K. Yasumura; K. Sato; Y. Yoshida; Y. Komine
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Paper Abstract

The effects of annealing on the electrical properties of Cd0.2Hg08Te(CMT) grown by liquid phase epitaxy technique are investigated. We show that the annealing at the temperature as low as 250°C under the vacuum condition is superior to the conventional technique, annealing at the temperature higher than 400°C under Hg over-pressure, to obtain high quality p-CMT layers. Hole concentration and mobility of the resultant p-CMT are 7.2x1015cm-3 and 787 cm2/V•sec, respectively.

Paper Details

Date Published: 18 November 1989
PDF: 1 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978509
Show Author Affiliations
K. Yasumura, Mitsubishi Electric Corp. (Japan)
K. Sato, Mitsubishi Electric Corp. (Japan)
Y. Yoshida, Mitsubishi Electric Corp. (Japan)
Y. Komine, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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