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Proceedings Paper

Far Infrared Absorption Spectra Of Amorphous (As2S3)- (Sb2S3) Semiconductors And The Spatial Charge Fluctuation
Author(s): K. Matsuishi; T. Anzaki; S. Onari; T. Arai
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Paper Abstract

Far infrared absorption spectra of amorphous (As2S3) 1-x(Sb2S3)x system (x=0.0-0.6) were measured in the wavenumber region 7-25 cm-' with Lamellar grating far infrared Fourier Transform Spectrometer, and the spatial fluctuation of charges and its correlation range were estimated with charge fluctuation model. The charge fluctuation of (As2S3)1-x(Sb2S3)x system increases with Sb2S3 concentration x. On the other hand, the correlation length of the charge fluctuation decreases from 7 A to 4.5 A with an increase in x. As a result, it can be found that the medium range order of As2S3 changes drastically with an increase in Sb2S3 concentration x.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978508
Show Author Affiliations
K. Matsuishi, University of Tsukuba (Japan)
T. Anzaki, University of Tsukuba (Japan)
S. Onari, University of Tsukuba (Japan)
T. Arai, University of Tsukuba (Japan)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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