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Proceedings Paper

Determination Of I-V Characteristics Of Negative Conductance Devices From Microwave Reflection Coefficients
Author(s): P. Huang; A. Botula; N. C. Luhmann Jr.; D. S. Pan
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Paper Abstract

Negative differential conductance (NDC) devices have stimulated intensive research activities since the first acknowledged work on the tunnel diode, also referred to as the Esaki diode l. In recent years, the interest in NDC devices has been revived by the successful fabrication of various double barrier resonant tunneling (DBRT) structures 2,3. The interest in these DBRT structures is due primarily to their high potential as high frequency devices. For the design of high frequency devices, the necessary information is provided by the detailed shape of the dc I-V characteristics, especially the negative conductance regime. Unfortunately, the NDC regime of the I-V curve has always made the dc I-V measurement difficult because of its nature to oscillate. A direct dc measurement of the I-V characteristics by a conventional curve tracer only shows the positive conductance portion of the entire I-V curve. Various methods have been proposed to measure the I-V characteristics.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978504
Show Author Affiliations
P. Huang, University of California (United States)
A. Botula, University of California (United States)
N. C. Luhmann Jr., University of California (United States)
D. S. Pan, University of California (United States)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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