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Proceedings Paper

The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage
Author(s): T. Suzuki; T. Iinuma; K. Mizuno
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Paper Abstract

The noise of GaAs Schottky diode caused by dry etching damage has been studied. The number of traps near the Pt/GaAs interface increases with the damage, and this greatly increases flicker noise. These experimental results can be explained by a theoretical calculation.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978410
Show Author Affiliations
T. Suzuki, Tohoku University (Japan)
T. Iinuma, Tohoku University (Japan)
K. Mizuno, Tohoku University (Japan)


Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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