Share Email Print

Proceedings Paper

The Dependence Of Gaas Schottky Diode Noise On Dry Etching Damage
Author(s): T. Suzuki; T. Iinuma; K. Mizuno
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The noise of GaAs Schottky diode caused by dry etching damage has been studied. The number of traps near the Pt/GaAs interface increases with the damage, and this greatly increases flicker noise. These experimental results can be explained by a theoretical calculation.

Paper Details

Date Published: 18 November 1989
PDF: 2 pages
Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); doi: 10.1117/12.978410
Show Author Affiliations
T. Suzuki, Tohoku University (Japan)
T. Iinuma, Tohoku University (Japan)
K. Mizuno, Tohoku University (Japan)

Published in SPIE Proceedings Vol. 1039:
13th Intl Conf on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?